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2/3-Diode Fit
04 Dec 2014 | | Contributor(s):: Stephan Suckow
This download provides the program "2/3-Diode Fit", which can be used to interactively simulate or fit I-V characteristics of solar cells using different 2- or 3-diode models. Different file formats and batch processing are supported as well as different modes: dark or illuminated I-V...
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Do you plan to publish the source?
Closed | Responses: 0
I was wondering if it's possible to see the source code of this tool.
Thanks.
https://nanohub.org/answers/question/1445
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Ozgur Polat
https://nanohub.org/members/104542
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Roger French
Roger H. French is the F. Alex Nason Professor in the Department of Materials Science and Engineering in the Case School of Engineering, Case Western Reserve University, Cleveland, Ohio. He has...
https://nanohub.org/members/81411
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Radoslav Borisov
https://nanohub.org/members/57617
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On-Chip Thermoelectric Cooling Tool
29 Mar 2011 | | Contributor(s):: Shuaib Salamat, David Alberto Saenz
Simulates an embedded spot peltier cooler on a chip 1D thermal profile.
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Particle Velocity Estimate
20 Jan 2011 | | Contributor(s):: derrick kearney, Steve Wereley
Track particles and estimate their velocity
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Illinois Tools: Optical Beam Focusing System
13 Dec 2010 | | Contributor(s):: Zuhaib Bashir Sheikh, Nahil Sobh, Mohammad Hazem Jaber
Generate Focused optical beams using principles of electromagnetic optics
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Protein Contact Maps
22 Oct 2010 | | Contributor(s):: Benjamin Rafferty, Zachary Carl Flohr, Ashlie Martini
Create and view protein contact maps and distance maps.
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Nanostructured Optoelectronics Toolbox
19 Oct 2009 | | Contributor(s):: Ian Michael Rousseau, Jeffrey C Grossman, Vladimir Bulovic, Polina Anikeeva
Examine charge and exciton transport in nanostructured optoelectonic devices
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Model for Far From Equilibrium Transport in CNT/GNR FETs
30 Nov 2009 | | Contributor(s):: Paolo Michetti, Giuseppe Iannaccone
Simulation of CNT/GNR FETs including inelastic scattering via virtual probes approach and accounting for the presence of possible Schottky barrier contacts.
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ANGEL - A Nonequilibrium Green Function Solver for LEDs
18 Jan 2010 | | Contributor(s):: sebastian steiger
An MPI-parallelized implementation of 1-D NEGF for heterostructures. Includes off-diagonal scattering. Effective mass band structure for electrons and holes. The online tool only provides basic NEGF functionality without scattering.
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Composite Laminate Analysis
06 Oct 2009 | | Contributor(s):: Andrew Ritchey
Uses basic laminate theory to estimate effective laminate properties and residual stresses, strains and deformations due to thermal loading.
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Random laser dynamics
12 Sep 2008 | | Contributor(s):: Alexander Gavrilenko, Sarshi Nardren, Taina D. Matos
Simulation of random laser dynamics
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Spin Coupled Quantum Dots
09 Jul 2008 | | Contributor(s):: John Shumway, Matthew Gilbert
Path integral calculation of exchange coupling of spins in neighboring quantum dots.
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Path Integral Monte Carlo
13 Dec 2007 | | Contributor(s):: John Shumway, Matthew Gilbert
Tool Description
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Huckel-IV 2.5 Source Code Download
05 Jul 2007 | | Contributor(s):: Ferdows Zahid
Huckel-IV computes current-voltage (I/V) and conductance spectrum (G/V) characteristics of a molecule sandwiched between two metallic contacts, one of which could be a scanning probe. Equilibrium properties such as Density of States and Transmission Function can also be computed. These...
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QWalk Quantum Monte Carlo Tutorial
15 Jun 2007 | | Contributor(s):: Lucas Wagner, Jeffrey C Grossman, Jeffrey B. Neaton, Ian Michael Rousseau
An accurate method to calculate the many body ground state of electrons
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CNTbands
14 Dec 2006 | | Contributor(s):: Gyungseon Seol, Youngki Yoon, James K Fodor, Jing Guo, Akira Matsudaira, Diego Kienle, Gengchiau Liang, Gerhard Klimeck, Mark Lundstrom, Ahmed Ibrahim Saeed
This tool simulates E-k and DOS of CNTs and graphene nanoribbons.
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NanoMOS
19 May 2006 | | Contributor(s):: , Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Yang Liu, Yunfei Gao, Xufeng Wang, Mark Lundstrom
2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs