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Perspectives on Ion-Induced Power Device Burnout in Space
02 Nov 2023 | | Contributor(s):: Kenneth F. Galloway, Scooter Ball
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WHiTe Compact Models
19 Mar 2023 | Compact Models | Contributor(s):
By Neal Graham Wood
This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...
https://nanohub.org/publications/339/?v=12
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Static DC Transformer Based on Negative Capacitance and High Voltage Engineering
14 Jul 2022 |
For DC voltage amplification, the operational amplifier is mostly used in the non-inverting configuration. In this case, the DC voltage amplification is done using a negative capacitance converter. Since the feedback capacitor acts as an open circuit for DC signal, it provides isolation between...
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WHiTe Compact Models
14 Jun 2022 | Compact Models | Contributor(s):
By Neal Graham Wood
This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...
https://nanohub.org/publications/339/?v=11
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WHiTe Compact Models
30 Oct 2021 | Compact Models | Contributor(s):
By Neal Graham Wood
This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...
https://nanohub.org/publications/339/?v=10
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WHiTe Compact Models
28 Aug 2021 | Compact Models | Contributor(s):
By Neal Graham Wood
This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...
https://nanohub.org/publications/339/?v=9
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WHiTe Compact Models
06 Aug 2021 | Compact Models | Contributor(s):
By Neal Graham Wood
This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...
https://nanohub.org/publications/339/?v=8
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IWCN 2021: Electronic States in 4H-SiC MOS Inversion Layers Considering Crystal Structure Using Empirical Pseudopotential Method
15 Jul 2021 | | Contributor(s):: Sachika Nagamizo, Hajime Tanaka, Nobuya Mori
In this study, to analyze the electronic states in 4H-SiC MOS inversion layers taking account of this feature, we described the crystal structure of 4H-SiC including the internal channel space using the empirical pseudopotential method, and we calculated the electronic states in the triangular...
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WHiTe Compact Models
01 Nov 2020 | Compact Models | Contributor(s):
By Neal Graham Wood
This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...
https://nanohub.org/publications/339/?v=7
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WHiTe Compact Models
13 Sep 2020 | Compact Models | Contributor(s):
By Neal Graham Wood
This package provides a set of 4H silicon carbide high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a junction...
https://nanohub.org/publications/339/?v=6
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WHiTe (Wood-High-Temperature) Compact Models
21 May 2020 | Compact Models | Contributor(s):
By Neal Graham Wood
This package provides a set of 4H silicon carbide high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a junction...
https://nanohub.org/publications/339/?v=4
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WHiTe (Wood-High-Temperature) Compact Models
16 Apr 2020 | Compact Models | Contributor(s):
By Neal Wood
Toshiba Europe Limited
This package provides a set of 4H silicon carbide high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a junction...
https://nanohub.org/publications/339/?v=3
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WHiTe (Wood-High-Temperature) Compact Models
10 Mar 2020 | Compact Models | Contributor(s):
By Neal Graham Wood
This package provides a set of 4H silicon carbide high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a junction...
https://nanohub.org/publications/339/?v=2
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WHiTe (Wood-High-Temperature) Compact Models
25 Feb 2020 | Compact Models | Contributor(s):
By Neal Graham Wood
This package provides a set of 4H silicon carbide high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a junction...
https://nanohub.org/publications/339/?v=1
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Covalent Defects of Carbon Nanotubes: New Class of High Purity, Indistinguishable Quantum Light Sources
02 Jan 2020 | | Contributor(s):: Han Htoon
Finally, I will report our most recent Hong-Ou-Mandel quantum optic experiment performed on quantum defects coupled to plasmonic cavities. We were able to realize indistinguishable single photon generation by exploiting the Purcell enhancement of the radiative decay rate of individual...
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UARK SiC Power MOSFET Model
22 Feb 2017 | Compact Models | Contributor(s):
By Mihir Mudholkar1, Shamim Ahmed1, Ramchandra Kotecha1, Ty McNutt1, Arman Ur Rashid1, Tom Vrotsos1, Alan Mantooth1
University of Arkansas Fayetteville
A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching...
https://nanohub.org/publications/152/?v=1
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Linda Starr
https://nanohub.org/members/139608
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Transformative Power Semiconductor Technologies to Impact 21st Century Energy Economy, and Space and Defense Electronics
22 Sep 2010 | | Contributor(s):: Krishna Shenai
This talk will focus on advanced power semiconductor materials, devices, circuits and systems that are needed in order to address this daunting challenge. Specifically we will discuss emerging silicon and wide bandgap materials and power devices, heterogeneous chip-scale power integration,...
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Surface Characterization Studies of Carbon Materials: SS-DNA, SWCNT, Graphene, HOPG
16 Feb 2010 | | Contributor(s):: Dmitry Zemlyanov
In this presentation examples of surface characterization studies of carbon specimens will be presented. (1) In particularly, the systematic XPS (X-ray photoelectron spectroscopy) characterization of graphene grown on the SiC surface will be reported. This work demonstrates a use for XPS to...
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Thermoelectric Power Factor Calculator for Nanocrystalline Composites
18 Oct 2008 | | Contributor(s):: Terence Musho, Greg Walker
Quantum Simulation of the Seebeck Coefficient and Electrical Conductivity in a 2D Nanocrystalline Composite Structure using Non-Equilibrium Green's Functions