111 nanowire in electronis and holes
Closed | Responses: 1
Simulation seems to stall at the end of the NEMO5 simulation for 2.5nm thick 111 wires. When selectin electrons and holes combined. The individual "just...
Confinement and Transport direction mismatch
I am using UTB bandstructure calculation tool and finding problems in orientation parameters.
Save 3D volume bandstructure
Closed | Responses: 2
I run a 3D volume simulation with Banstructure Lab. In the output log file only the k points are listed, NOT the energy values...
How can I save the complete 3D...
Parameters for InAs
Can you please provide me with the reference for the tight binding parameters that are used in the calculations for InAs and GaAs ?
HOW DO I USE THE TOOL FOR ANOTHER MATERIAL NOT MENSIONED IN POPDOWN ??
Closed | Responses: 0
I Want to calculate bandstructure of my material. That is actually double perovskite structured. Cs2BiAgCl6. How do I proceed??
How does the tool compute the transverse effective mass for bulk si bandstructure
How does the tool compute the transverse effective mass for bulk Si?
Indirect to direct transition of the bandstructure
I am trying to simulate the Si-channel UTB SOI .I hope to see the transition from indirect band-gap to direct band-gap as go for thicknesses below 3 nm. But I find the...
Can we increase the limit of k-space region from 0,0 to
I want to simulate the Ultra-thin body Silicon for [0,0] to [1,0] instead of [0,0] to [0.5,0] in k-space.I am unable to change that manually.Please can you help me out?
how can i save the files to my computer? i use the download on the right corner and i click save. but i cant find it again
Band structure error in InAs UTB devices
first of all, I would like to thank you to have developed and made available online this tool.
Currently, I’m interested in the study of the band structure of https://nanohub.org/answers/question/1328
Exit code 139
GaAs with biaxial strain, swept from -3% to +3% produces the following error:
Problem launching job: Program...
Confinement Effective mass
I am interested in calculating the effective mass along the confinement direction for nanowire geometries. Can this be done using Bandstrlab or is there another tool for it?
Abnormal Termination of DGMOS UTB Self-Consistent Simulation
When running an Ultra-thin body MOSFET simulation with the job type set to “Calculate the UTB band-structure self consistently https://nanohub.org/answers/question/1100
2% biaxial strain Ge, promen at the Gamma point
When I simulate the bandstructure of Ge with high strain (2%), I get a discontinuity at the Gamma point, and therefore the effective masses are not correctly calculated. Can you...
L point on bulk central bands and bulk (all) band structure plots appears truncated
When simulating the bulk band structure for GaAs and Si (I haven’t tried others), I noticed that the L...
The results for strained Si nanowire are different with the other literature
The obtained results for strained silicon nanowire are different with other literature.
The energy difference between the minimum of light and heavy bands should be decreased in...
Self Consistent for Ge DGMOS
I am currently trying to simulate the Band structure for a Ge DGMOS (with thickness 4nm) using self consistent calculation at a particular Bias Voltage. However the simulator is unable to...
what kind of new research can be done by this tool? any exercise? in details..plz
can we simulate the band structure of graphene?
Why do I not see option for choosing different crystal directions for bulk materials?