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What does Distance vs Density graph indicate
Q&A|Closed | Responses: 1
https://nanohub.org/answers/question/2310
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POTENTIAL Vs DISTANCE CURVE; DENSITY Vs Distance curve
Q&A|Closed | Responses: 3
I want to ask that right after we get simulation results, the text file of potential vs distance has 2 readings. potx1 and potx1(#2) what does the hash value specify?
https://nanohub.org/answers/question/2299
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simulation acntfet with graphene as sources and drain
Q&A|Closed | Responses: 0
please help me how simulation cntfet that graphene used as sources and drain with lg=5nm , tox =3.5 , lch=10nm ,k=16
https://nanohub.org/answers/question/2127
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simulation acntfet with graphene as sources and drain
Q&A|Closed | Responses: 0
please help me how simulation cntfet that graphene used as sources and drain with lg=5nm , tox =3.5 , lch=10nm ,k=16
https://nanohub.org/answers/question/2126
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how to simulate CNFET Model in SPICE3f4
Q&A|Closed | Responses: 1
I want to simulate CNFET in spice3f4 but i don't know how to include verilog model files
https://nanohub.org/answers/question/2120
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I am not getting any curve after clicking the simulation button, what else am I suppose to do?
Q&A|Closed | Responses: 0
https://nanohub.org/answers/question/2077
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Dharmesh Mishra
https://nanohub.org/members/178472
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NO RESULTS APPEAR
Q&A|Closed | Responses: 0
Hello.
I have simulated the CNTFET lab but the graph did not appear.
Thank you
https://nanohub.org/answers/question/1591
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Can you please tell me the working of CNTFET. It seems a bit confusing to me. what type of cntfet do you use? SB or gate doped?
Q&A|Closed | Responses: 0
https://nanohub.org/answers/question/1078
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Where, why, and how you used Dyson equation
Q&A|Open | Responses: 1
It’s mentioned that Dyson equation is used. Would you please let me know in which part you used Dyson equation. Which part of Hamiltonian considered as perturbation and why? I...
https://nanohub.org/answers/question/902
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Why the effect of temperature is different at on and off-state current?
Q&A|Open | Responses: 1
For V(drain)=0.1V or 0.4V and V(gate)=0V, by increasing the temperature (300ºk, 400ºk, 500ºk) the current (off-state current) increases. Such behavior can be seen for V(drain)=0.4V and...
https://nanohub.org/answers/question/872
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why the saturation current increases with decrease in diameter of the CNT
Q&A|Closed | Responses: 5
I had done the simulation using your tool “CNTFET Lab” available at nanohub. I have done the simulations for different diameter of the CNT (by changing the chirality) used in the channel. The...
https://nanohub.org/answers/question/866
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is there a problem with the simulator?
Q&A|Closed | Responses: 1
hi, I tried to get some I-V curves but I couldnt (even with default settings)I just get values of drain source or gate voltage and there is not any curve, just the values..
https://nanohub.org/answers/question/459
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what is the threshold voltage
Q&A|Closed | Responses: 5
for simulation of CNTFET what is the exact value of the threshold voltage? how does this depends on the device parameters.
https://nanohub.org/answers/question/450
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How long did users took to run a simulation for CNTFET? It took me like1 hr to run a simulation. Is this normal?
Q&A|Closed | Responses: 2
https://nanohub.org/answers/question/416
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why I~vds curve shows higher saturation current for longer channel length?
Q&A|Open | Responses: 1
I was simulating for CNTFETs with different channel length.I had taken a (10,0) CNT.I tried to plot I~vds curve for channel lengths 10nm,15nm and 30nm.saturation current for 10nm is coming...
https://nanohub.org/answers/question/200
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What is the Diameter of the nanotube in this simulation?
Q&A|Open | Responses: 1
What is the Diameter of the nanotube in this simulation?
I can not find the value in the parameters-setting part.
https://nanohub.org/answers/question/167
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i can’t find output in simulation of cntfet
Q&A|Open | Responses: 2
hi sir , i can’t find output in simulation of cntfet, i want to have IV curves in result of simulation , plz help me.
https://nanohub.org/answers/question/20
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CNTFET Lab
13 Mar 2006 | | Contributor(s):: Neophytos Neophytou, Shaikh S. Ahmed, POLIZZI ERIC, Gerhard Klimeck, Mark Lundstrom
Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices
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Shaikh S. Ahmed
Shaikh Shahid Ahmed is currently working as a Full Professor with the School of Electrical, Computer, and Biomedical Engineering at Southern Illinois University, Carbondale, IL, USA. Dr. Ahmed has...
https://nanohub.org/members/9293