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About RTD i need to do with different materials
Q&A|Closed | Responses: 0
Like i need to perfrom Resonant Tunneling Diode for different semiconductor materials like
GaAs-Sic, GaAs-GaN, GaAs-SiGe, GaAs-Zno
https://nanohub.org/answers/question/2742
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Dear sir, Can I change the materials like barriers or quantum well ? If we cannot change the materials then what is the significance of changing lattice constant ?
Q&A|Closed | Responses: 0
https://nanohub.org/answers/question/2570
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when launch your another model like Sp3 mode or Sp2 mode?
Q&A|Closed | Responses: 1
https://nanohub.org/answers/question/2569
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calculation of semiclassical profile for using generalized green's function approach
Q&A|Open | Responses: 1
For solving Equilibrium and Non-Equilibrium green's function , the semiclassical profile is calculated with thomas-fermi charge. How is the fermi level defined for calculation of charge in...
https://nanohub.org/answers/question/2382
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Sentaurus RTD diodes simulation?
Q&A|Closed | Responses: 7
Hi guys,
really impressed by your work here. I was wondering: is possible to replicate these type of simulations in TCAD Sentaurus?
Hope you can reply
MT
https://nanohub.org/answers/question/2186
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Is it possible for me to use this software to calculate a InGaAs/InAlAs quantum structure? looking for a reply
Q&A|Closed | Responses: 1
https://nanohub.org/answers/question/1537
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Plotting a 6 barrier device
Q&A|Closed | Responses: 1
When I try to use 6 barrier device with default settings, I don’t get any of the plots. It gives me a Rappture error.
https://nanohub.org/answers/question/1320
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Sweeping the bias back and forth
Q&A|Closed | Responses: 0
I wanted to check the hysteresis in current that occurs in the NDR region of the I-V curve, when you sweep the bias forward and then back again, due to redistribution of charges. However, I...
https://nanohub.org/answers/question/1127
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Shows absolute current-voltage characteristics. Whats the area?
Q&A|Open | Responses: 3
Hi
The latest version of the tool outputs absolute current-voltage curve, rather than earlier current density-voltage curve. What is the area that ie being used to calculate absolute...
https://nanohub.org/answers/question/937
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Bias voltage
Q&A|Closed | Responses: 1
Hi, Can I ask how the Bias voltage is applied? which side is positive and negative? left or right?
Thanks
Regards
James
https://nanohub.org/answers/question/746
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how to work offline
Q&A|Open | Responses: 1
how to use this tool offline because i am not has continious link to the web
https://nanohub.org/answers/question/442
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Resonant Tunneling Diode Simulation with NEGF: First-Time User Guide
Teaching Materials | 01 Jun 2009 | Contributor(s):: Samarth Agarwal, Gerhard Klimeck
This first-time user guide for Resonant Tunneling Diode Simulation with NEGF provides some fundamental concepts regarding RTDs along with details on how device geometry and simulation parameters influence current and charge distribution inside the device.NCN@Purdue
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small decay length in the relaxation energy appears to cause non-convergence
Q&A|Open | Responses: 1
https://nanohub.org/answers/question/154
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quantum mechanical charge appears to be over-estimated by a factor of 5.7
Q&A|Open | Responses: 1
Comparing the semiclassical charge for a long, highly doped contact to the single pass quantum mechanical charge appears to result in charge that is about a factor 5.7 to high. This must be a...
https://nanohub.org/answers/question/137
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RTD basee circuit design simulator
Q&A|Open | Responses: 1
how design mulivalude circuit by the resonance tunnaling diode
https://nanohub.org/answers/question/134
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![](/files/MTRjZGIzZDFkMzI4NjdhNjg4ZDFjM2E4OGFiYzIyMDMxM2VkYWMzMTk3OThiODFkYTUwNTIwNTEwNTQwMzU1MjovdmFyL3d3dy9uYW5vaHViL2FwcC9zaXRlL21lbWJlcnMvMTcyODYvdGh1bWIucG5n)
Benjamin P Haley
Ben received his B.S. in Physics from Purdue in 1998. He worked for Cummins Engine Co and Intel before attending graduate school at UC Davis. He received a Masters in Engineering Applied Science in...
https://nanohub.org/members/17286
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![](/files/MTRjZGIzZDFkMzI4NjdhNjg4ZDFjM2E4OGFiYzIyMDMxM2VkYWMzMTk3OThiODFkYTUwNTIwNTEwNTQwMzU1MjovdmFyL3d3dy9uYW5vaHViL2FwcC9zaXRlL21lbWJlcnMvMTA2MTcvdGh1bWIucG5n)
Samarth Agarwal
Samarth Agarwal got a PhD. in Physics from Purdue University in 2010. His work involved band-gap engineering for solar cells and exploring novel devices for reduction in power consumption of...
https://nanohub.org/members/10617