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How can we build silicene based devices in this tool
Q&A|Closed | Responses: 1
https://nanohub.org/answers/question/2480
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how to saved output of tutorial 6 in "nanoTCAD ViDES"
Q&A|Closed | Responses: 0
https://nanohub.org/answers/question/2221
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ERROR : Phi.out not found, while running 2nd simulation using 'prev'
Q&A|Closed | Responses: 0
I am facing the following error while trying to run a 2nd simulation on the Double Gate CNTFET after setting the command from 'flat' to 'prev'
ERROR : Phi.out not...
https://nanohub.org/answers/question/2004
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how to define work function & doping conc. in TMD FET
Q&A|Closed | Responses: 0
I am working on TMDFET specially on MoS2 , I have some questions
1) how do i define the doping in source & drain in input script file?
2) how do i define different work...
https://nanohub.org/answers/question/1996
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How to obtain Vgs Vs Ids for particalar value of Vds ? I am getting a point not able to know how to specify the voltage in sweep field.
Q&A|Closed | Responses: 0
https://nanohub.org/answers/question/1954
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Error in Installation
Q&A|Closed | Responses: 1
Dear all,
I have complied the sorce code. It seems OK.
However when I "make test", NanoTCAD_ViDESmod.so does not work well.
I have got the following error...
https://nanohub.org/answers/question/1865
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How to design a new TMD materials like Wse2,etc in nanotcad vides?
Q&A|Closed | Responses: 2
https://nanohub.org/answers/question/1769
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ViDES fails to show output after the simulation complete (when input uploaded using inputdeck)
Q&A|Closed | Responses: 0
Uploaded input file a 13,0 nanotube FET with doping fraction at source as -5e-3.
After the simulation complete, it says problem launching job,
Program finished: exit...
https://nanohub.org/answers/question/1505
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Is this current version (1.22) the latest or as specified on the official website, it is an old version? Thank you!
Q&A|Closed | Responses: 1
https://nanohub.org/answers/question/1481
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How the drain voltage sweep is defined in input file?
Q&A|Closed | Responses: 0
https://nanohub.org/answers/question/1338
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Specifying Shotkey Barrier Height for SB type GNRFET
Q&A|Closed | Responses: 0
The Shotkey Barrier height is not the same for all GNRFETs (SB type) and will have a significant impact on IV curve. Of course the SB height will depend on the work function of the contact metal...
https://nanohub.org/answers/question/731
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Is it possible to define a dual-gate CNTFET into TCAD Vides?
Q&A|Closed | Responses: 1
Hello,
I’m interested to simulate a Dual-gate CNTFET with two independent gates. The back-gate is wider than the front gate. The outer part of the device is controlled by the back gate...
https://nanohub.org/answers/question/636
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multi-layered GNR
Q&A|Open | Responses: 1
Hi,
I was trying to simulate a multi-layered GNR FET using Vides. However I did not find any way to include the number of layers either using graphical interface or inputdeck…
Could you...
https://nanohub.org/answers/question/489
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Simulation of CNFET with multiple carbon nanotubes
Q&A|Open | Responses: 1
Dear Sir,
I’m wishing to design a CNFET with multiple carbon nanotubes placed in parallel under the same gate. However, it seems that there’s no parameter for adding more than...
https://nanohub.org/answers/question/486
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Is it possible to simulate circuits made of various CNTs? (for instance logic gates)
Q&A|Closed | Responses: 1
https://nanohub.org/answers/question/409
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About Double Gate simulation
Q&A|Open | Responses: 1
Hello,
I tried to simulate Double gate device, The front gate voltage is 1V and back gate voltage is -1 V, The device gate length is 30 nm. I swept drain voltage from 0.1 to 1V…....
https://nanohub.org/answers/question/389
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code seems to crash with a message “Child Process Exited Abnormally”
Q&A|Open | Responses: 2
I tried to run the default structure and also tried to sweep the drain voltage and get a message “Child Process Exited Abnormally”
https://nanohub.org/answers/question/290