Tags: transistors

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Description

A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal.More information on Transistor can be found here.

Resources (241-260 of 295)

  1. ECE 659 Lecture 4: Landauer Model

    out of 5 stars 

    27 Jan 2009 | | Contributor(s):: Supriyo Datta

  2. ECE 659 Lecture 1: Introduction

    out of 5 stars 

    21 Jan 2009 | | Contributor(s):: Supriyo Datta

  3. ECE 659 Lecture 2: Molecular, Ballistic and Diffusive Transport

    out of 5 stars 

    21 Jan 2009 | | Contributor(s):: Supriyo Datta

  4. ECE 659 Lecture 3: Mobility

    out of 5 stars 

    21 Jan 2009 | | Contributor(s):: Supriyo Datta

  5. ECE 612 Lecture 27: Heterojunction Bipolar Transistors

    out of 5 stars 

    15 Dec 2008 | | Contributor(s):: Mark Lundstrom

  6. ECE 612 Lecture 26: Heterostructure FETs

    out of 5 stars 

    10 Dec 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1) Introduction,2) Heterojunction review,3) Modulation doping,4) I-V characteristics,5) Device Structure / Materials,6) Summary.

  7. ECE 612 Lecture 25: SOI Electrostatics

    out of 5 stars 

    08 Dec 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1. Introduction,2. General solution, 3. VTF vs. VGB,4. Subthreshold slope,5. Double gate (DG) SOI,6. Recap,7. Discussion,8. Summary.

  8. ECE 612 Lecture 22: CMOS Circuit Essentials

    out of 5 stars 

    24 Nov 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) The CMOS inverter,2) Speed,3) Power,4) Circuit performance,5) Metrics,6) Limits.This lecture is an overview of CMOS circuits. For a more detailed presentation, the following lectures from the Fall 2006 teaching of this course should be viewed:Lecture 24: CMOS Circuits, Part I (Fall...

  9. ECE 606 Lecture 32: MOS Electrostatics I

    out of 5 stars 

    19 Nov 2008 | | Contributor(s):: Muhammad A. Alam

  10. ECE 606 Lecture 26: Schottky Diode II

    out of 5 stars 

    19 Nov 2008 | | Contributor(s):: Muhammad A. Alam

  11. ECE 612 Lecture 18B: CMOS Process Flow

    out of 5 stars 

    18 Nov 2008 | | Contributor(s):: Mark Lundstrom

    For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf.This lecture is a condensed version of the more complete presentation (listed above) by Dr. Fuller.

  12. ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET

    out of 5 stars 

    14 Nov 2008 | | Contributor(s):: Muhammad A. Alam

    Guest lecturer: Muhammad A. Alam.

  13. ECE 612 Lecture 19: Device Variability

    out of 5 stars 

    14 Nov 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1) Sources of variability,2) Random dopantfluctuations (RDF),3) Line edge roughness (LER),4) Impact on design.

  14. ECE 612 Lecture 18A: CMOS Process Steps

    out of 5 stars 

    12 Nov 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Unit Process Operations,2) Process Variations.

  15. ECE 606: Principles of Semiconductor Devices

    out of 5 stars 

    12 Nov 2008 | | Contributor(s):: Muhammad A. Alam

    In the last 50 years, solid state devices like transistors have evolved from an interesting laboratory experiment to a technology with applications in all aspects of modern life. Making transistors is a complex process that requires unprecedented collaboration among material scientists, solid...

  16. Lecture 2: Thresholds, Islands, and Fractals

    out of 5 stars 

    04 Nov 2008 | | Contributor(s):: Muhammad A. Alam

    Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via elementary examples. These three concepts will form the theoretical foundation for discussion in Lecture...

  17. Lecture 1: Percolation in Electronic Devices

    out of 5 stars 

    04 Nov 2008 | | Contributor(s):: Muhammad A. Alam

    Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the diversity of these phenomena however, the concepts percolation theory provides a broad theoretical framework...

  18. ECE 612 Lecture 17: Gate Resistance and Interconnects

    out of 5 stars 

    03 Nov 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1) Gate Resistance,2) Interconnects,3) ITRS,4) Summary.

  19. Percolation Theory

    out of 5 stars 

    03 Nov 2008 | | Contributor(s):: Muhammad A. Alam

    The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon- or metal crystals in nanocrystal Flash memory, the number of Nanowires in a flexible nanoNET...

  20. ECE 612 Lecture 16: MOSFET Leakage

    out of 5 stars 

    31 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1) MOSFET leakage components,2) Band to band tunneling,3) Gate-induced drain leakage,4) Gate leakage,5) Scaling and ITRS,6) Summary.