A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal.More information on Transistor can be found here.
ABACUS Tool Suite (Fall 2023)
19 Oct 2023 | | Contributor(s):: Gerhard Klimeck
The objective of the recitation series is to enable faculty to enhance existing or new semiconductor classes with interactive simulations.
ABACUS Tool Suite and Bipolar Junction Transistors (Fall 2023)
18 Oct 2023 | | Contributor(s):: Gerhard Klimeck
In the fifth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Bipolar-Junction-Transistor-Lab. Students can experiment with npn and pnp BJTs in ideal textbook 1D geometries as well as realistic 2D geometries.
ECE 606: Solid State Devices I
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
This course provides the graduate-level introduction to understand, analyze, characterize and design the operation of semiconductor devices such as transistors, diodes, solar cells, light-emitting devices, and more.The material will primarily appeal to electrical engineering students whose...
ECE 606 L1.1: Solid State Devices
ECE 606 L1.2: Basic Device Operations – Raising 1,000 Questions
ECE 606 L24.1 Bipolar Junction Transistor - Introduction
ECE 606 L24.2: Bipolar Junction Transistor - Band Diagram in Equilibrium
ECE 606 L24.3: Bipolar Junction Transistor - Currents in BJTs
20 Jul 2023 |
ECE 606 L24.4: Bipolar Junction Transistor - Ebers Moll Model
ECE 606 L25.1: Bipolar Junction Transistor - Current Gain in BJTs
ECE 606 L25.2: Bipolar Junction Transistor - Base Doping Design
ECE 606 L25.3: Bipolar Junction Transistor - Collector Doping Design (Kirk Effect, Base Pushout)
ECE 606 L25.4: Bipolar Junction Transistor - Emitter Doping Design
ECE 606 L25.5: Bipolar Junction Transistor - Poly-Si Emitter
ECE 606 L25.6: Bipolar Junction Transistor - Short Base Transport
ECE 606 L26: Bipolar Junction Transistor - High-Frequency Response
ECE 606 L27.1: Heterojunction Bipolar Transistor - Applications, Concept, Innovation, Nobel Prize
ECE 606 L27.2: Heterojunction Bipolar Transistor - Heterojunction Equilibrium Solution
ECE 606 L27.3: Heterojunction Bipolar Transistor - Types of Heterojunctions
ECE 606 L27.4: Heterojunction Bipolar Transistor - Abrupt Junction HBTs