Description

The tunnel field-effect transistor (tunnel FET or TFET) is a transistor that operate by tunneling through the source/drain barrier rather than diffusion over the barrier. Tunnel FETs belongs to the family of so-called steep-slope devices which can switch on/off at lower voltages than metal oxide semiconductor FETs (MOSFETs) and are being investigated for ultra-low-power electronic applications.

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1. A UCSD analytic TFET model

   Downloads | 18 Dec 2015 | Contributor(s):: Jianzhi Wu, Yuan Taur

   A continuous, analytic I-V model is developed for double-gate and nanowire tunnel FETs with 3D density of states, including depletion in the source. At the core of the model is a gate-controlled channel potential that satisfies the source and drain boundary conditions. Verified by...