These lectures discuss the physics of nanoscale transistors. The focus is on developing a sound, physical understanding of the operation of sub-100nm MOSFETS. The lectures focus of the simple, "essential" device physics using a "top-of-the-barrier" or "scattering" model introduced by the author. The guiding framework for the lectures is the MIT Virtual Source Model, a semi-empirical transistor model based on these ideas that is also suitable for circuit simulation. The lectures are a rough draft of a 5-week course on "Nanoscale Transistors" presented in the Fall of 2012 on naonoHUB-U, and the start of a set of lecture notes in the "Lessons from Nanoscience" series that will be published by World Scientific.

Researchers should cite this work as follows:

• Mark Lundstrom (2012), "Nanoscale Transistors," https://nanohub.org/resources/14774.

  BibTex | EndNote

1. bottom up approach
2. nanoelectronics
3. nanotransistors