Citations Non-affiliated (4) | Affiliated (32)

Non-affiliated authors

• L. Nataraj; F. Xu; M. Bundy; S. Cloutier (2012), "Optical Properties Of Freestanding Germanium Nanocrystals," OSA Technical Digest : pg. 1-3, Optical Society of America.

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• L. Nataraj; F. Xu; S. Cloutier (2010), "Enhanced Room-Temperature Light-Emission from Tensile-Strained Germanium Nanocrystals," Integrated Photonics Research, Silicon and Nanophotonics IPRSN): pg. 1-3, Optical Society of America, 07.

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• James Teherani (2010), "Band-to-band Tunneling in Silicon Diodes and Tunnel Transistors": pg. -, Massachusetts Institute of Technology, 06.

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• Sameer Walavalkar; Carrie Hofmann; Andrew Homyk; M. Henry; Harry Atwater; Axel Scherer (2010), "Tunable Visible and Near-IR Emission from Sub-10 nm Etched Single-Crystal Si Nanopillars," NANOLETTERS, ACS Publications, 10, 11: pg. 4423-4428, 04. (DOI: 10.1021/nl102140k).

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Affiliated authors

• N. Neophytou; G Klimeck; H. Kosina (2011), "Subband Engineering for p-Type Silicon Ultra-Thin Layers for Increased Carrier Velocities: An Atomistic Analysis," Journal of Applied Physics, AIP, 109, 5: pg. - , 03. 0021-8979. (DOI: 10.1063/1.3556435).

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• Abhijeet Paul; Giuseppe Tettamanzi; Sunhee Lee; S. Mehrotra; N. Collaert; S. Biesemans; Sven Rogge; G Klimeck (2011), "Interface Trap Density Metrology from Sub-Threshold Transport in Highly Scaled Undoped Si n-FinFETs," AIP, 12: pg. -.

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• Sebastian Steiger; Michael Povolotsky; H. Park; Tillmann Kubis; G Klimeck (2011), "NEMO5: A Parallel Multiscale Nanoelectronics Modeling Tool," Nanotechnology, IEEE Transactions On, IEEE, 10, 6: pg. 1464-1474. (DOI: 10.1109/TNANO.2011.2166164).

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• A. Razavieh; Navab Singh; Abhijeet Paul; G Klimeck; D.B. Janes; Joerg Appenzeller (2011), "A New Method To Achieve RF Linearity In SOI Nanowire MOSFETs," Radio Frequency Integrated Circuits Symposium RFIC), 2011 IEEE : pg. -, IEEE. 978-1-4244-8293-1 . (DOI: 10.1109/RFIC.2011.5940626 ).

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• R. Kim; Titash Rakshit; R. Kotlyar; S. Hasan; C.E. Weber (2011), "Effects Of Surface Orientation On The Performance Of Idealized III--V Thin-Body Ballistic N-MOSFETs," IEEE ELECTRON DEVICE LETTERS, IEEE, 32, 6: pg. 746-748. (DOI: 10.1109/LED.2011.2127440).

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• Abhijeet Paul; Saumitra Mehrotra; Mathieu Lusier; G Klimeck (2010), "Performance Prediction of Ultra-scaled SiGe/Si Core/Shell Electron and Hole Nanowire MOSFETs," IEEE ELECTRON DEVICE LETTERS, 31, 4: pg. 278-280, 03. 0741-3106. (DOI: 10.1109/LED.2010.2040577).

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• Giuseppe Tettamanzi; Abhijeet Paul; G. Landsbergen; J. Verduijn; Sunhee Lee; N. Collaert; S. Biesemans; G Klimeck; Sven Rogge (2010), "Thermionic Emission as a tool to study transport in undoped nFinFETs," Electron Device Letters, IEEE, 31, 2: pg. 1-3, 01.

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• A. Abudukelimu; K. Kakushima; P. Ahmet; K. Tsutsui; A. Nishiyama; N. Sugii; K. Natori; T. Hattori; H. Iwai (2010), "Performance of Silicon Ballistic Nanowire MOSFET with Diverse Orientations and Diameters," ECS Transactions, The Electrochemical Society, 27, 1: pg. 1111-1116, ECS, 03. 1938-5862 \p). (DOI: 10.1149/1.3360758).

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• Mincheol Shin; Sunhee Lee; G Klimeck (2010), "Computational Study on the Performance of Si Nanowire pMOSFETs Based on the k * p Method," IEEE Transactions on Electron Devices, 57, 9: pg. 2274-2283, 09. 0018-9383. (DOI: 10.1109/TED.2010.2052400).

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• Timothy Boykin; Mathieu Lusier; G Klimeck (2010), "Current density and continuity in discretized models," EUROPEAN JOURNAL OF PHYSICS, 31, 5: pg. 1077-1087, 07. (DOI: 10.1088/0143-0807/31/5/010).

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• Abhijeet Paul; Mathieu Lusier; G Klimeck (2010), "Modified valence force field approach for phonon disperson: from zinc-blende to nanowires," Journal of Computational Electronics, 9, 3: pg. 160-172, 10. (DOI: 10.1007/s10825-010-0332-9).

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• N. Neophytou; G Klimeck (2009), "Design space for low sensitivity to size variations in [110] PMOS nanowire devices: The implications of anisotrpy in the quantization mass," Nano Letters, ACS Publications, 9, 2: pg. 623-630, 01. (DOI: 10.1021/nl802893m).

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• Abhijeet Paul; Saumitra Mehrotra; Mathieu Lusier; G Klimeck (2009), "On the validity of the top of the barrier quantum transport model for ballistic nanowire MOSFETs," Computational Electronics, IWCE '09. 13th International Workshop on, IEEE proceedings of the 13th International Workshop on Computational Electronics: pg. 1-4, IEEE, 10. 978-1-4244-3925-6 . (DOI: 10.1109/IWCE.2009.5091134).

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• Abhijeet Paul; Saumitra Mehrotra; Mathieu Lusier; G Klimeck (2009), "Surface and Orientation dependence on performance of Trigated Silicon Nanowire MOSFETs," Microelectronics and Electron Devices, 2009 IEEE Workshop, 7th IEEE Workshop on Microelectronics and Electron Devices WMED 2009).: pg. 1-4, 05. 978-1-4244-3551-7. (DOI: 10.1109/WMED.2009.4816145).

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• Giuseppe Tettamanzi; G. Landsbergen; Abhijeet Paul; P. Deosarran; N. Collaert; G Klimeck; S. Biesemans; Sven Rogge; Sunhee Lee (2009), "Sub-threshold study of undoped trigate nFinFET," Thin Solid Films, 518, 9: pg. 2521-2523, 10. (DOI: 10.1016/j.tsf.2009.10.114).

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• N. Neophytou; G Klimeck; H. Kosina; S. Selberherr (2009), "Dependence of Injection Velocity and Capacitance of Si nanowires on Diameter, Orientation, and Gate Bias : An Atomistic Tight-Binding Study," Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on : pg. -, IEEE, 09. 978-1-4244-3974-8. (DOI: 10.1109/SISPAD.2009.5290245).

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• Hui Zhao; Raseong Kim; Abhijeet Paul; Mathieu Lusier; G Klimeck; Fa-Jun Ma; Subhash Rustagi; Ganesh Samudra; Navab Singh; Guo-Qiang Lo; Dim-Lee Kwong (2009), "Characterization and Modeling of Subfemtofarad Nanowire Capacitance Using the CBCM Technique," IEEE ELECTRON DEVICE LETTERS, IEEE, 30, 5: pg. 526-528, 04. (DOI: 10.1109/LED.2009.2020442).

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• N. Neophytou; Abhijeet Paul; Mark Lundstrom; G Klimeck (2008), "Bandstructure Effects in Silicon Nanowire Electron Transport," Electron Devices, IEEE Transactions on, IEEE, 55, 6: pg. 1286-1297, 06. (DOI: 10.1109/TED.2008.920233).

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• Yang Liu; N. Neophytou; T. Low; G Klimeck; Mark Lundstrom (2008), "A Tight-Binding study of the Ballistic Injection Velocity for Ultrathin-Body SOI MOSFETs," Electron Devices, IEEE Transactions on, IEEE, 55, 3: pg. 866-871, 03. (DOI: 10.1109/TED.2007.915056).

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• Raseong Kim; N. Neophytou; Abhijeet Paul; G Klimeck; Mark Lundstrom (2008), "Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors," Journal Of Vacuum Science And Technology B, AVS, 26, 4: pg. 1628-1631, 08. (DOI: 10.1116/1.2908442).

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• Yang Liu; N. Neophytou; G Klimeck; Mark Lundstrom (2008), "Band Structure Effects on the Performance of III-V Ultra-thin-body SOI MOSFETs," IEEE Transactions on Electron Devices, 55, 5: pg. 1116-1122, 05. 0018-9383. (DOI: 10.1109/TED.2008.919290).

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• N. Neophytou; Abhijeet Paul; Mark Lundstrom; G Klimeck (2008), "Simulations of nanowire transistors: Atomistic vs. Effective Mass Models," Journal of Computational Electronics, Springer, 7, 3: pg. 363-366, 02. (DOI: 10.1007/s10825-008-0188-4).

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• G Klimeck; Mathieu Lusier (2008), "From NEMO1D and NEMO3D to OMEN: moving towards atomistic 3-D quantum transport in nano-scale semiconductors," Electron Devices Meeting, 2008. IEDM 2008. IEEE International, San Francisco, CA: pg. 1-4, IEEE, San Francisco, CA, 12. 978-1-4244-2377-4 . (DOI: 10.1109/IEDM.2008.4796647 ).

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• G Klimeck; M. McLennan; Mark Lundstrom; George Adams III (2008), "nanoHUB.org - online simulation and more materials for semiconductors and nanoelectronics in education and research," 8th Ieee Conference On Nanotechnology, 2008. Nano : pg. 401-404, IEEE, 08.

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• Abhijeet Paul; N. Neophytou; G Klimeck (2008), "Orientation dependence of the charge distribution and quantum capacitance in silicon nanowire transistors," Proceedings of TECHCON 2008, Austin, TX: pg. -, Austin, TX, 09.

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• N. Neophytou; Abhijeet Paul; Mark Lundstrom; G Klimeck (2007), "Self-Consistent Simulations of Nanowire Transistors Using Atomistic Basis Sets," Simulation Of Semiconductor Processes And Devices, 2005. SISPAD 2005. International Conference On, Springer, 12: pg. 217-220, 09. 978-3-211-72860-4. (DOI: 10.1007/978-3-211-72861-1_51).

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• G Klimeck (2007), "NanoHUB.org Tutorial: Education Simulation Tools," Nano/micro Engineered And Molecular Systems, 2007. NEMS: pg. 937-937, IEEE, 01. 1-4244-0610-2. (DOI: 10.1109/NEMS.2007.351992).

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• Gengchiau Liang; Jie Xiang; Neerav Kharche; G Klimeck; Charles Lieber; Mark Lundstrom (2007), "Performance Analysis of a Ge/Si Core/Shell Nanowire Field-Effect Transistor," Nano Letters, ACS Publications, 7, 3: pg. 642-646, 02. (DOI: 10.1021/nl062596f).

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• J. Wang; A. Rahman; Avik Ghosh; G Klimeck; Mark Lundstrom (2005), "On the validity of the parabolic effective-mass approximation for the I-V calculation of silicon nanowire transistors," IEEE Transactions on Electron Devices, IEEE, 52, 7: pg. 1589-1595, 07. 1557-9646. (DOI: 10.1109/TED.2005.850945).

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• A. Rahman; G Klimeck; Mark Lundstrom (2005), "Novel channel materials for ballistic nanoscale MOSFETs-bandstructure effects," Electron Devices Meeting, 2005. Iedm Technical Digest. Ieee International: pg. 604-, IEEE, 12. (DOI: 10.1109/IEDM.2005.1609421).

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• J. Wang; A. Rahman; G Klimeck; Mark Lundstrom (2005), "Bandstructure and Orientation Effects in Si and Ge Nanowire FETs," Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International , IEEE: pg. 1-4, IEEE, 12. 0-7803-9268-X . (DOI: 10.1109/IEDM.2005.1609399).

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• A. Rahman; G Klimeck; Mark Lundstrom; Timothy Boykin (2004), "Bandstructure Effects in Ballistic Nanoscale MOSFETs," IEEE IEDM, San Francisco, CA: pg. 139-142, IEEE, San Francisco, CA, 12. 0-7803-8684-1. (DOI: 10.1109/IEDM.2004.1419089).

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