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Citations Non-affiliated (78) | Affiliated (13)
Non-affiliated authors
- Muhammad Hadi, Hanim Hussin, N. Soin, (2022), "The Impact Of Variation In Diameter And Dielectric Materials Of The CNT Field-Effect Transistor", ECS Journal Of Solid State Science And Technology, IOP Publishing, 11, 2: pg: -, (DOI: https://doi.org/10.1149/2162-8777/ac4ffc)
- Sabhya Kandley, Harish Dogra, (2020), "Gate All Around \GAA) FET Modeling Using 2D Material As Channel", International Research Journal of Advanced Engineering and Science, 5, 3: pg: 30-34, 2455-9024
- Khoder Bachour, Majdeddin Ali, Ied Alabboud, (2020), "Impact Of Changing Channel Length And Band Gaps Of A Carbon Nanotube On The Current Of A Carbon Nanotube Field Effect Transistors \CNTFETs)", Al-Nahrain Journal For Engineering Sciences, 23, 1: pg: 21-29, (DOI: http://doi.org/10.29194/NJES.23010021)
- Lin Xu, Chenguang Qiu, Lian-Mao Peng, Zhiyong Zhang, (2020), "Transconductance Amplification In Dirac-Source Field-Effect Transistors Enabled By Graphene/Nanotube Hereojunctions", Advanced Electronic Materials, Wiley Online Library, 6, 5: pg: 1-8, (DOI: https://doi.org/10.1002/aelm.201901289)
- Nur Suhaimi, Hanim Hussin, (2020), "Characterizing The Carbon Nanotube Field Effect Transistor: A Geometric Variation Study", ECS Journal Of Solid State Science And Technology, IOP Publishing, 9, 4: pg: 1-6, (DOI: https://doi.org/10.1149/2162-8777/ab801a)
- GSM Galadanci, Abdulrazak Tijjani, Garba Babaji, SulaimanMuhammad Gana, (2018), "Comparative Study Of Electrical Properties Of Carbon Nano Tube \CNT) And Silicon Nanowire \SNW) MOSFET Devices", Bayero Journal Of Pure And Applied Sciences, Kano, Nigeria: Bayero University, 11, 1: pg: 55-63
- Muhammad Ali, Mohammed Ahmed, Malgorzata Chrzanowska-Jeske, (2018), "Logical Effort Framework For CNFET-Based VLSI Circuits For Delay And Area Optimization", IEEE Transactions On Very Large Scale Integration \VLSI) Systems, IEEE: pg: 1-14, (DOI: 10.1109/TVLSI.2018.2880322)
- Imtiaj Khan, Ovishek Morshed, Sharif Mominuzzaman, (2018), "Diameter Optimization For Highest Degree Of Ballisticity Of Carbon Nanotube Field Effect Transistors", ArXiv Preprint ArXiv:1811.07316, : pg: 1-6
- GSM Galadanci, Abdulrazak Tijjani, SulaimanMuhammad Gana, (2018), "Performance Analysis Of Electrical Characteristics Of Single Gate And Double Gate Nano-MOSFET Devices", American Journal of Engineering Research \AJER), 7, 6: pg: 248-259
- Malik Mehdy, Aleandro Antidormi, M. Graziano, G. Piccinini, (2018), "Nanoarrays For Systolic Biosequence Analysis", Journal Of Circuits, Systems And Computers, World Scientific, 27, 12: pg: 1850194-1-1850194-26, (DOI: 10.1142/S0218126618501943)
- Patrizio Graziosi, N. Neophytou, (2018), "Simulation Study Of Ballistic Spin-MOSFET Devices With Ferromagnetic Channels Based On Some Heusler And Oxide Compounds", JOURNAL OF APPLIED PHYSICS, AIP Publishing, 123, 8: pg: 084503-1-84503-10, (DOI: 10.1063/1.5011328)
- Imtiaj Khan, Ovishek Morshed, Sharif Mominuzzaman, (2017), "_Performance Study Of Strain Engineered CMOS Inverter Logic Using Silicon Nanowire And Carbon Nanotube Field Effect Transistors", American Scientific Reearch Journal for Engineering, Technology, and Sciences \ASRJETS), 37, 1: pg: 99-109
- D Dass, R. Vaid, (2017), "Impact Of SWCNT Band Gaps On The Performance Of A Ballistic Carbon Nanotube Field Effect Transistors ", Journal of nano- and electronic physics, 9, 4: pg: 04007-1-04007-5, 2077-6772/2017/9\4)04007\5), (DOI: 10.21272/jnep.9\4).04007)
- Prabhat Shukla, Swapnali Makdey, (2017), "Simulation Of Silicon Nanowire Field Effect Transistor For Different High K Dielectric Material", International Journal of Scientific Engineerng and Research \JSER), 5, 2: pg: 10-12, 2347-3878
- Ramin Nouri-Bayat, Ali Kashani-Nia, (2017), "Designing A Carbon Nanotube Field-Effect Transistor With High Transition Frequency For Ultra-Wideband Application", Engineering, 9: pg: 22-35, 1947-394X, (DOI: 10.4236/eng.2017.91003)
- Jibesh Saha, N. Chakma, Mohd. Hasan, (2016), "Impact Of Scaling Channel Length On The Performances Of Nanoscale FETs", 9th International Conference on Electrical and Computer Engineering, : pg: 123-126, (DOI: 10.1109/ICECE.2016.7853871)
- Manish Mishra, Abhinav Shukla, UN Tripathi, Harsha Gupta, (2016), "Analysis Of Phenomenon At Quantum Capacitance Limit Of SNWFET Using FETToy", International Journal of Avanced Engineering Research and Science \IJAERS), 3, 9: pg: 42-51, 2349-6495\P) | 2456-1908\O), (DOI: 10.22161/ijaers)
- Afiq Hamzah, Razali Ismail, (2016), "Performance Prediction Of Graphene Nanoscroll And Carbon Nanotube Transistors", IEEE-ICSE2016 Proc. 2016, : pg: 149-152, (DOI: 10.1109/SMELEC.2016.7573613)
- Jong-Myeon Park, Shin-Nam Hong, (2016), "Contact And Channel Resistances Of Ballistic And Non-ballistic Carbon-nanotube Field-effect Transistors", Journal Of The Korean Physical Society, 68, 2: pg: 251-256, (DOI: 10.3938/jkps.68.251)
- Mohammad Sakib, Afroza Haque, Marwa Nabi, (2016), "Temperature Effect Of CNTFET Under Different Dielectric Materials", International Journal of Innovative Research in Electrical, Electronics, Instrumentation and Control Engineering, 4, 1: pg: 60-63, (DOI: 10.17148/IJIREEICE.2016.4115)
- Md. Rahman, Md. Sagar, Shafkat Tasnim, Mohammad Farhan, MD. Rahman, (2016), "Performance Analysis Of Current Ratio Under Different Dielectric Constant For Carbon Nanotube Field Effect Transistor", International Journal of Advanced Research in Computer and Communication Engineering, 5, 1: pg: 151-153, (DOI: 10.17148/IJARCCE.2016.5137)
- Farnousha Emamifar, Reza Yousefi, (2016), "A Mathematical Space Mapping Model For Ballistic Carbon Nanotube Field-effect Transistors", Int. Nano Lett, 6: pg: 27-33, (DOI: 10.1007/s40089-015-0165-4)
- Kajari Agrawal, Reena Sonkusare, (2015), "PVT Variations Of A Behaviorally Modeled Single Walled Carbon Nanotube Field-effect Transistor \SW-CNTFET)", 2015 International Conference on Nascent Technologies in the Engineering Field \ICNTE-2015), : pg: 1-6, 978-1-4799-7263-0/15/
- Roberto Marani, Anna Gina Perri, (2015), "DC Thermal Modeling Of CNTFETs Based On A Semi-empirical Approach", : pg: -
- D Dass, R Prasher, R Vaid, (2015), "Simulation Study Of Coaxially Gated Ballistic CNTFET", International Journal of Scientific and Technical Advancements, 14, 3: pg: 11-15, 2454-1532
- Sabbir Khan, Nirjhor Rouf, Mahmudul Hasan, Sharif Mominuzzaman, (2014), "Investigation Of CNTFET Performance With Drain Control Coefficient Effect", Nanoscience and Nanotechnology , 4, 2: pg: 34-40, (DOI: 10.5923/j.nn.20140402.03)
- Chin Ng, M Tan, (2014), "Low Dimensional Simulator For Carbon-based Devices", IEEE-ICSE2014 Proc. 2014, : pg: 40-43, 978-1-4799-5760-6
- Avshish Kumar, Mubashshir Husain, Ayub Khan, Mushahid Husain, (2014), "Effect Of Parametric Variation On The Performance Of Single Wall Carbon Nanotube Based Field Effect Transistor", Physica E: Low-dimensional Systems And Nanostructures, Elsevier, 64: pg: 178-182, (DOI: 10.1016/j.physe.2014.07.018)
- Roberto Marani, Anna Perri, (2014), "A Comparison OF IV MODELS FOR CARBON NANOTUBE FIELD EFFECT TRANSISTORS", International Journal of Advances in Engineering & Technology, 6, 6: pg: 2496-2507, 22311963
- Ng Lin, (2014), "LOW DIMENSIONAL SIMULATOR FOR CARBON BASED DEVICES", : pg: -
- A Bushmaker, M Amer, S Cronin, (2014), "Electrical Transport And Channel Length Modulation In Semiconducting Carbon Nanotube Field Effect Transistors", IEEE Transactions on Nanotechnology, IEEE, 13, 2: pg: 176-181, (DOI: 10.1109/TNANO.2013.2289386)
- Fabrizio Lombardi, Geunho Cho, (2014), "Circuit-Level Simulation Of A CNTFET With Unevenly Positioned CNTs By Linear Programming", TIONS ON DEVICE AND MATERIALS RELIABILITY, IEEE, 14, 1: pg: 234-244, 1530-4388 (DOI: 10.1109/TDMR.2013.2279154)
- Atheer Al-Shaggah, Abdoul Rjoub, Mohammed Khasawneh, (2013), "Carbon Nanotube Field Effect Transistor Models Performance And Evaluation", 2013 IEEE Jordan Conference on Applied Electrical Engineering and Computing Technologies \AEECT), Applied Electrical Engineering and Computing Technologies \AEECT), 2013 IEEE Jordan Conference on, : pg: -, IEEE, 978-1-4799-2303-8/13
- Nirjhor Rouf, Ashfaqul Deep, Rusafa Hassan, (2013), "Current-Voltage Characteristics Of Carbon Nanotube Field Effect Transistor Considering Non-Ballistic Conduction", : pg: 1-154, Department of Computer Science and Engineering, BRAC University
- X Saura, X Lian, David Jimenez, E Miranda, X Borrise, F Campabadal, J. Sune, (2013), "Field-effect Control Of Breakdown Paths In HfO2 Based MIM Structures", Microelectronics Reliability, Elsevier, 53, 9: pg: 1346-1350, (DOI: 10.1016/j.microrel.2013.07.061)
- S. Frache, D Chiabrando, M. Graziano, M. Vacca, L Boarino, M. Zamboni, (2013), "Enabling Design And Simulation Of Massive Parallel Nanoarchitectures", Journal Of Parallel And Distributed Computing, Elsevier, 74, 6: pg: -, (DOI: j.jpdc.2013.07.010)
- Roberto Marani, Anna Perri, (2013), "A Simple IV MODEL OF CARBON NANOTUBE FIELD EFFECT TRANSISTORS", International Journal of Advances in Engineering & Technology, 6, 3: pg: 1076-1082, (DOI: 10.7323/ijaet/v6_iss3)
- Jalal Rostamimonfared, Abolfazl Talebbaigy, Teamour Esmaeili, Mehdi Fazeli, Atena Kazemzadeh, (2013), "Cylindrical Silicon Nanowire Transistor Modeling Based On Adaptive Neuro-Fuzzy Inference System ANFIS", Journal of Electrical Engineering & Technology, KOREAN INST ELECTR ENG 901 KSTC, 635-4 YEOKSAM-DONG, GANGNAM-GU, SEOUL, 135-703, SOUTH KOREA, 8, 5: pg: 1163-1168, Online: 2093-7423 Print: 1975-0102 (DOI: 10.5370/JEET.2013.8.5.742)
- Geunho Cho, Fabrizio Lombardi, (2013), "On The Delay Of A CNTFET With Undeposited CNTs By Gate Width Adjustment", Journal Of Electronic Testing, Springer, 29, 3: pg: 261-273, (DOI: 10.1007/s10836-013-5388-6)
- D Dass, R. Prasher, R. Vaid, (2013), "Impact Of Scaling Gate Insulator Thickness On The Performance Of Carbon Nanotube Field Effect Transistors", Journal of nano- and electronic physics, ? ?, 5, 2: pg: 02014-1-02014-6
- R. Prasher, D Dass, R. Vaid, (2013), "Performance Of A Double Gate Nanoscale MOSFET Based On Novel Channel Materials", Journal of nano- and electronic physics, ? ?, 5, 1: pg: 01017-1-01017-5
- DK Ferry, (2012), "Transport In Graphene On BN And SiC", 2012 12th IEEE International Conference on Nanotechnology \IEEE-NANO) , Nanotechnology \IEEE-NANO), 2012 12th IEEE Conference on, : pg: 1-5, IEEE, 978-1-4673-2198-3
- J.M. Park, J.H. An, S.N. Hong, (2012), "Comparison Of Simulation Models For The Coaxially-gated Carbon-nanotube Field-effect Transistor", Journal Of The Korean Physical Society, Springer, 61, 3: pg: 410-414, (DOI: 10.3938/jkps.61.410)
- M.L.P. Tan, G. Lentaris, G.A.J. Amaratunga, (2012), "Device And Circuit-level Performance Of Carbon Nanotube Field-effect Transistor With Benchmarking Against A Nano-MOSFET", Nanoscale Research Letters, Springer, 7, 1: pg: -, (DOI: 10.1186/1556-276X-7-467)
- R. Vaid, R. Prasher, (2012), "Exploring Indium Antimonide \InSb) As Novel Channel Material For Nanoscale Devices Using Simulation Approach", Proc. 28th International Conference on Microelectronics, Microelectronics \MIEL), 2012 28th International Conference on, : pg: 119-122, IEEE
- J. Rosa, (2012), "Using NanoHUB. Org For Teaching And Learning Nanoelectronic Devices In Materials Engineering", Global Engineering Education Conference \EDUCON), 2012 IEEE, Global Engineering Education Conference \EDUCON), 2012 IEEE, : pg: -, IEEE, 978-1-4673-1457-2, (DOI: 10.1109/EDUCON.2012.6201018)
- Roberto Marani, Anna Perri, (2012), "A DC Model Of Carbon Nanotube Field Effect Transistor For CAD Applications", International Journal Of Electronics, Taylor & Francis, 99, 3: pg: 437-444, (DOI: 10.1080/00207217.2011.629223)
- Reza Yousefi, M. Shabani, (2011), "A Model For Carbon Nanotube FETs In The Ballistic Limit", Microelectronics Journal, Elsevier, 42, 11: pg: 1299-1304, (DOI: 10.1016/j.mejo.2011.08.012)
- Y. Jenberu, (2011), "Modeling And Performance Evaluation Of Graphene Nanoribbon Field Effect Transistor", : pg: -, Addis Ababa University
- II Abramov, AE Volkov, (2011), "The Influence Of Oxide Materials On The IV Characterictics Of MOSFET's Based On Carbon Nanotubes", Microwave and Telecommunication Technology \CriMiCo), 2011 21th International Crimean Conference , Microwave and Telecommunication Technology \CriMiCo), 2011 21th International Crimean Conference, : pg: 826-827, IEEE, 978-1-4577-0883-1
- A. Zahedi, A. Kashaninia, F. Farrokhi, (2011), "Carbon Nanotube Field Effect Transistor-Based Gas Sensor For NH3 Detection", Biosensors, 25: pg: 54-58, 2010-4618
- Wei-Han Lee, Ming-Jer Chen, (2011), "Gate Direct Tunneling Current in Uniaxially Compressive Strained nMOSFETs: A Sensitive Measure of Electron Piezo Effective Mass", IEEE Transactions on Electron Devices, IEEE, 58, 1: pg: 39-45, 11, (DOI: 10.1109/TED.2010.2084578)
- Geunho Cho, Fabrizio Lombardi, Yong Kim, (2011), "Modeling Undeposited CNTs for CNTFET Operation", TIONS ON DEVICE AND MATERIALS RELIABILITY, Institute of Electrical and Electronics Engineers, Inc., 3 Park Avenue, 17 th Fl New York NY 10016-5997 USA, 11, 2: pg: 263-272, 10, (DOI: 10.1109/TDMR.2011.2123896 )
- Leonardo Gomez, (2010), "Hole transport in strained SiGe-channel MOSFETs : velocity in scaled devices and mobility under applied mechanical strain", N/A, : pg: -, Massachusetts Institute of Technology, 06
- Reza Yousefi, K Saghafi, M. Moravvej-Farshi, (2010), "Application of Neural Space Mapping for Modeling Ballistic Carbon Nanotube Transistors", Iranian Journal Of Electrical & Electronic Engineering, Iranian Journal of Electrical and Electronic Engineering, 6, 2: pg: 70-76, 05
- Muzaffer Simsir, Niraj Jha, (2010), "NanoV: nanowire-based VLSI design", Proceedings Of The 2010 Ieee/acm International Symposium On Nanoscale Architectures, Proceedings of the 2010 IEEE/ACM International Symposium on Nanoscale Architectures, : pg: 53-58, IEEE, 06, 978-1-4244-8018-0
- Loo Koon, (2010), "Carbon Based Devices for Future CMOS Transistors", : pg: -, 07, (DOI: http://hdl.handle.net/123456789/362)
- Reza Yousefi, K Saghafi, M. Moravvej-Farshi, (2010), "Neural network model for ballistic carbon nanotube transistors", Nanoelectronics Conference \inec), 2010 3rd International, Nanoelectronics Conference \INEC), 2010 3rd International, : pg: 183-184, IEEE, 03, 978-1-4244-3543-2, (DOI: 10.1109/INEC.2010.5424616)
- Tom Kazmierski, Dafeng Zhou, Bashir Al-Hashimi, Peter Ashburn, (2010), "Numerically efficient modeling of CNT transistors with ballistic and non-ballistic effects for circuit simulation", IEEE Transactions on Nanotechnology, IEEE, 9, 1: pg: 99-107, 01, (DOI: 10.1109/TNANO.2009.2017019 )
- Abdellah Aouaj, Ahmed Bouziane, Ahmed Nouacry, (2009), "Nanotube carbon transistor \CNTFET): I-V and C-V, a qualitative comparison between fettoy simulator and compact model", Multimedia Computing and Systems, 2009. ICMCS '09. International Conference on, Multimedia Computing and Systems, 2009. ICMCS'09. International Conference on, : pg: 236-239, IEEE, 11, 978-1-4244-3756-6, (DOI: 10.1109/MMCS.2009.5256697)
- Roberto Marani, Anna Perri, (2009), "CNTFET Modelling for Electronic Circuit Design", Microelectronics Technology and Devices - SBMicro 2009, Microelectronics Technology and Devices, The Electrochemical Society, 23, 1: pg: 429-437, ECS, 08, 978-1-56677-737-7, (DOI: 10.1149/1.3183748)
- Rasmita Sahoo, R.R. Mishra, (2009), "Simulations of Carbon Nanotube Field Effect Transistors", International Journal Of Electronic Engineering Research, 1, 2: pg: 117-125, 04
- Rasmita Sahoo, R.R. Mishra, (2009), "Carbon Nanotube Field Effect Transistor: Basic Characterization and Effect of High Dielectric Material", International Journal Of Recent Trends In Engineering, Citeseer, 2, 7: pg: 40-42, 11, 1797-9617
- Leonardo Gomez, Pouya Hashemi, Judy Hoyt, (2009), "Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs", IEEE Transactions on Electron Devices, IEEE, 56, 11: pg: 2644-2651, 10, (DOI: 10.1109/TED.2009.2031043)
- Tom Kazmierski, Dafeng Zhou, Bashir Al-Hashimi, (2009), "HSPICE implementation of a numerically efficient model of CNT transistor", Forum On Specification And Design Languages, Specification \& Design Languages, 2009. FDL 2009. Forum on, : pg: 1-5, IEEE, 09
- K Saghafi, Reza Yousefi, (2009), "Modeling of Ballistic Carbon Nanotube Transistors by Neural Space Mapping", International Conference On Computer And Electrical Engineering, 2008. ICCEE 2008., International Conference on Computer and Electrical Engineering, 2008. ICCEE 2008., : pg: 165-168, IEEE, 01, 978-0-7695-3504-3, (DOI: 10.1109/ICCEE.2008.123)
- Harish Narendar, (2008), "A Simulation Study of Enhancement mode Indium Arsenide Nanowire Field Effect Transistor", N/A, : pg: 1-113, 12
- Dafeng Zhou, Tom Kazmierski, Bashir Al-Hashimi, (2008), "VHDL-AMS implementation of a numerical ballistic CNT model for logic circuit simulation", Specification, Verification And Design Languages, Specification, Verification and Design Languages, 2008. FDL 2008. Forum on, : pg: 94-98, IEEE, 09, 978-1-4244-2264-7
- Tom Kazmierski, Dafeng Zhou, Bashir Al-Hashimi, (2008), "Efficient Circuit-Level Modeling of balistic CNT using Piecewise Non-Linear Approximation of Mobile Charge Density", DATE '08 Proceedings of the conference on Design, automation and test in Europe , Design, Automation and Test in Europe, 2008. DATE'08, : pg: 146-151, IEEE, 04, 978-3-9810801-3-1
- Joel Hoffa, (2007), "Simulation of Carbon Nanotube Based Field Effect Transistors", : pg: 1-73, University of Cincinnati, 05
- Rhonda Myers-Riggs, (2007), "Simulation and Design of InAs Nanowire Transistors Using Ballistic Transport", : pg: -, University of Cincinnati, 10
- Tom Kazmierski, Dafeng Zhou, Bashir Al-Hashimi, (2007), "A fast, numerical circuit-level model of carbon nanotube transistor", Nanoscale Architechtures, 2007, Nanosarch 2007, IEEE International Symposium On, Nanoscale Architectures, 2007. NANOSARCH 2007. IEEE International Symposium on, : pg: 33-37, Ieee, 10, 978-1-4244-1791-9, (DOI: 10.1109/NANOARCH.2007.4400855)
- Aurangzeb Khan, A. Shah, Jihua Guo, (2007), "Modeling and Simulation of n-Type Carbon Nanotube Field Effect Transistors Using Ca as Contact Electrodes", Research, 1018: pg: -, 03, (DOI: 10.1557/PROC-1018-EE10-17)
- Ian O'Connor, Junchen Liu, Frédéric Gaffiot, Fabien Prégaldiny, Christophe Lallement, Cristell Maneux, Johnny Goguet, Sebastien Frégonese, Thomas Zimmer, Lorena Anghel, Tong-Trinh Dang, Régis Leveugle, (2007), "CNTFET Modeling and Reconfigurable Logic-Circuit Design", IEEE Transactions on Circuits and Systems--I: Regular Papers, IEEE, 54, 11: pg: 2365-2379, 11, 1549-8328, (DOI: 10.1109/TCSI.2007.907835)
- Fabien Prégaldiny, Christophe Lallement, Birahim Diange, Jean-Michel Sallese, Francois Krummenacher, (2006), "Compact Modeling of Emerging Technologies with VHDL-AMS", Advances In Design And Specification Languages For Embedded Systems, Advances in Design and Specification Languages for Embedded Systems, Springer Netherlands, 3: pg: 38492-, 09, 978-1-4020-6147-9, (DOI: 10.1007/978-1-4020-6149-3_1)
- J.-B. Kammerer, C. Lallement, F. Pregaldiny, (2006), "Design-oriented Compact Models for CNTFETs", Nanoscale, Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006. International Conference on, : pg: 34-39, IEEE, 09, 0-7803-9727-4
- Ronald Cosby, (2006), "Strengthening Nanoscience Education through Multidisciplinary Collaborations", Materials Research Society Symposium Proceedings--Education in Nanoscience and Engineering, MRS Proceedings, 931, 1: pg: 93-98, Cambridge Univ Press, 03, (DOI: 10.1557/PROC-0931-KK04-03)
- Rahmat Sanudin, (2005), "Characterisation of Ballistic Carbon Nanotube Field-Effect Transistor", : pg: 1-114, 11
Affiliated authors
- Amritanshu Palaria, Alejandro Strachan, Gerhard Klimeck, (2008), "Electronic Structure and Transport in Silicon Nano-Structures with Non-Ideal Bonding Environments", Proceedings of TECHCON 2008, Austin, TX: pg: -, Austin, TX, 09
- Gerhard Klimeck, M. McLennan, Mark Lundstrom, George Adams III, (2008), "nanoHUB.org - online simulation and more materials for semiconductors and nanoelectronics in education and research", 8th Ieee Conference On Nanotechnology, 2008. Nano , Nanotechnology, 2008. NANO'08. 8th IEEE Conference on, : pg: 401-404, IEEE, 08
- Amritanshu Palaria, Gerhard Klimeck, Alejandro Strachan, (2008), "Structures and energetics of Si nanotubes from molecular dynamics and density functional theory", Physical Review B, 78: pg: -, 11, (DOI: 10.1103/PhysRevB.78.205315)
- Mark Lundstrom, (2006), "Nanotransistors: A Bottom-Up View", Proceeding Of The 36th European Solid-state Device Research Conference, Proceeding of the 36th European Solid-State Device Research Conference, : pg: 33-40, IEEE, 09, 1-4244-0301-4, (DOI: 10.1109/ESSDER.2006.307633)
- Jian Wang, (2005), "Device Physics and Simulation of Silicon Nanowire Transistors", : pg: 1-149, Purdue University, 08
- Jian Wang, A. Rahman, Avik Ghosh, Gerhard Klimeck, Mark Lundstrom, (2005), "Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations", Applied Physics Letters, AIP, 86, 9: pg: 093113-1-093113-3, 02, (DOI: 10.1063/1.873055)
- A. Rahman, Gerhard Klimeck, Mark Lundstrom, (2005), "Novel channel materials for ballistic nanoscale MOSFETs-bandstructure effects", Electron Devices Meeting, 2005. Iedm Technical Digest. Ieee International, Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International, : pg: 604-, IEEE, 12, (DOI: 10.1109/IEDM.2005.1609421)
- Jian Wang, Mark Lundstrom, (2005), "Channel Material Optimization for the Ultimate Planar and Nanowire MOSFETs: A Theoretical Exploration", Device Research Conference, 2005. 63rd Drc. Conference Digest, Device Research Conference Digest, 2005. DRC'05. 63rd, 1: pg: 241-242, IEEE, 06, 0-7803-9040-7
- Jian Wang, A. Rahman, Avik Ghosh, Gerhard Klimeck, Mark Lundstrom, (2005), "On the validity of the parabolic effective-mass approximation for the I-V calculation of silicon nanowire transistors", IEEE Transactions on Electron Devices, IEEE, 52, 7: pg: 1589-1595, 07, 1557-9646, (DOI: 10.1109/TED.2005.850945)
- A. Rahman, Jihua Guo, S. Datta, Mark Lundstrom, (2003), "Theory of ballistic nanotransistors", Electron Devices, IEEE, IEEE, 50, 9: pg: 1853-1864, 09, (DOI: 10.1109/TED.2003.815366)
- M. Paulsson, S. Datta, (2003), "Thermoelectric effect in molecular electronics", Physical Review B, APS, 67, 24: pg: 241403-1-241403-4, 06, 1098-0121, (DOI: 10.1103/PhysRevB.67.241403)
- Mark Lundstrom, X. Ren, (2002), "Essential physics of carrier transport in nanoscale MOSFETs", Electron Devices, IEEE, IEEE, 49, 1: pg: 133-141, 01, (DOI: 10.1109/16.974760)
- Jing Guo, S. Datta, Mark Lundstrom, Markus Brink, Paul McEuen, Ali Javey, Hongjie Dai, Hyoungsub Kim, Paul McIntyre, (2002), "Assessment of Silicon MOS and Carbon Nanotube FET Performance Limits Using a General Theory of Ballistic Transistors", IEEE IEDM, Electron Devices Meeting, 2002. IEDM'02. Digest. International, : pg: 711-714, IEEE, 12