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History of Semiconductor Engineering
Online Presentations | 28 Jun 2006 | Contributor(s):: Bo Lojek
When basic researchers started working on semiconductors during the late nineteen thirties and on integrated circuits at the end of the nineteen fifties, they did not know that their work would change the lives of future generations. Very few people at that time recognized the significance of...
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Homework for Circuit Simulation: ECE 255
Teaching Materials | 08 Jan 2006 | Contributor(s):: Gerold Neudeck
This collection of homeworks is used in ECE 255 "Introduction to Electronic Analysis and Design" (Purdue University). Students do their work, orsometimes check their work, by using the Spice 3F4 simulator on the nanoHUB.
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Introduction to Electronics
Online Presentations | 17 Apr 2020 | Contributor(s):: Center for E3S, Aaron Ragsdale
Aaron Ragsdale, a former Master's student and researcher at Stanford University, leads an introductory course on common components, devices and elementary design techniques. This course consists of four modules: 1: Fundamental Variables & Electrical Components 2: Circuit...
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Investigation of the Electrical Characteristics of Triple-Gate FinFETs and Silicon-Nanowire FETs
Online Presentations | 08 Aug 2006 | Contributor(s):: Monica Taba, Gerhard Klimeck
Electrical characteristics of various Fin field-effect transistors (FinFETs) and silicon-nanowires were analyzed and compared using a modified three-dimensional self-consistent quantum-mechanical simulator in order to investigate device performance. FinFETs have been proposed to fulfill the...
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Lock It Up!: A SCALE K-12 Curriculum Unit
Teaching Materials | 22 May 2024 | Contributor(s):: Imani Noel Adams, Suzanne Hawthorne, Matt Riney, Brandy Tippery, Tamara J. Moore, Morgan M Hynes, Siddika Selcen Guzey, Kerrie Douglas, Breejha S Quezada, Rachel E Gehr, Azizi Penn, Emily Marie Haluschak, SCALE K12
Grade Levels High School: Integrated Chemistry and Physics Approximate Time Needed to Complete Unit Three weeks Unit Summary In this unit students will use the engineering design process to develop an understanding of the fundamentals of electrical circuits and microelectronics. In...
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Logic Devices and Circuits on Carbon Nanotubes
Online Presentations | 05 Apr 2006 | Contributor(s):: Joerg Appenzeller
Over the last years carbon nanotubes (CNs) have attracted an increasing interest as building blocks for nano-electronics applications. Due to their unique properties enabling e.g. ballistic transport at room-temperature over several hundred nanometers, high performance CN field-effect transistors...
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MCW07 Conductance Switching in Fluorene/TiO2 Molecular Heterojunctions
Online Presentations | 13 Sep 2007 | Contributor(s):: Richard L.McCreery
Molecular junctions consisting of a monolayer of fluorene and 10 nm of TiO2 between conducting contacts exhibit a memory effect upon positive polarization of the of the TiO2 for a few milliseconds. The junction conductance increases for a period of several minutes, but can be “erased” by a...
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MCW07 Exploring Trends in Conductance for Well-Defined Single Molecule Circuits
Online Presentations | 04 Apr 2009 | Contributor(s):: Mark S Hybertsen
In our recent research, we have been able to measure and characterize the impact of intrinsic molecular properties on the conductance of single molecule circuits formed with amine-gold linkages. In this talk, I will review the experiments and the physical picture of the junction based on the...
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Metal Oxide Nanowires as Gas Sensing Elements: from Basic Research to Real World Applications
Online Presentations | 21 Sep 2009 | Contributor(s):: andrei kolmakov
Quasi 1-D metal oxide single crystal chemiresistors are close to occupy their specific niche in the real world of solid state sensorics. Potentially, the major advantage of this kind of sensors with respect to available granular thin film sensors will be their size and stable, reproducible and...
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Modeling and Analysis of VLSI Interconnects
Online Presentations | 10 May 2007 | Contributor(s):: Cheng-Kok Koh
With continual technology scaling, the accurate and efficient modeling and simulation of interconnect effects have become problems of central importance. In order to accurately model the distributive effects of interconnects, it is necessary to divide a long wire into several segments, with each...
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Modeling Radiation Effects from the Component Level to the System Level
Online Presentations | 24 Oct 2023 | Contributor(s):: Ronald Schrimpf
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Molecular Transport Structures: Elastic Scattering, Vibronic Effects and Beyond
Online Presentations | 13 Feb 2006 | Contributor(s):: Mark Ratner, Abraham Nitzan, Misha Galperin
Current experimental efforts are clarifying quite beautifully the nature of charge transport in so-called molecular junctions, in which a single molecule provides the channel for current flow between two electrodes. The theoretical modeling of such structures is challenging, because of the...
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Moore's Law Forever?
Online Presentations | 13 Jul 2005 | Contributor(s):: Mark Lundstrom
This talk covers the big technological changes in the 20th and 21st century that were correctly predicted by Gordon Moore in 1965. Moore's Law states that the number of transistors on a silicon chip doubles every technology generation. In 1960s terms that meant every 12 months and currently...
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Multimeter
Tools | 10 Feb 2012 | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Understand the correct procedure for measuring voltage (V) and current (I), and observe the dependence between the interchange of the leads and the sign of the numerical reading.
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Multiphase Gallium Nitride Nanowires and Nanocircuits
Online Presentations | 04 Feb 2008 | Contributor(s):: Virginia M. Ayres
Catalyst-free vapor-solid nanowire growth, a newly described method for the production of nanowires compatible with a wide variety of semiconductor materials, has been used to produce novel multiphase zinc-blende/wurtzite gallium nitride nanowires. Orientation relation-ships within the multiphase...
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Nano-CMOS
Tools | 06 Feb 2007 | Contributor(s):: wei zhao, yu cao
Predictive model files for future transistor technologies.
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Nanoelectronic Architectures
Online Presentations | 24 Feb 2005 | Contributor(s):: Greg Snider
Nanoelectronic architectures at this point are necessarily speculative: We are still evaluating many different approaches to fabrication and are exploring unconventional devices made possible at the nano scale. This talk will start off with a review of some "classical" crossbar structures using...
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Nanoelectronics and the Future of Microelectronics
Online Presentations | 22 Aug 2002 | Contributor(s):: Mark Lundstrom
Progress in silicon technology continues to outpace the historic pace of Moore's Law, but the end of device scaling now seems to be only 10-15 years away. As a result, there is intense interest in new, molecular-scale devices that might complement a basic silicon platform by providing it...
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Nanoelectronics: The New Frontier?
Online Presentations | 18 Apr 2005 | Contributor(s):: Mark Lundstrom
After forty years of advances in integrated circuit technology, microelectronics is undergoing a transformation to nanoelectronics. Modern day MOSFETs now have channel lengths of only 50 nm, and billion transistor logic chips have arrived. Moore’s Law continues, but the end of MOSFET scaling is...
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NanoMOS 2.5 Source Code Download
Downloads | 22 Feb 2005 | Contributor(s):: Zhibin Ren, Sebastien Goasguen
NanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of five transport models is available (drift-diffusion, classical ballistic, energy transport, quantum ballistic, and quantum diffusive). The transport models treat quantum effects in the...