Tags: NEGF

Description

The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.

Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.

Online Presentations (1-20 of 80)

  1. ABACUS Tool Suite and Bandstructure and Band Models (Fall 2023)

    22 Aug 2023 | | Contributor(s):: Gerhard Klimeck

    In the third session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate several bandstructure tools. With these, students can explore the Standard Periodic Potential aka Kronig-Penney model as well as bandstructure formation by transmission through finite barriers....

  2. ABACUS Bandstructure Models (Spring 2022)

    05 May 2022 | | Contributor(s):: Gerhard Klimeck

    In the third session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate several bandstructure tools. With these, students can explore the Standard Periodic Potential aka Kronig-Penney model as well as bandstructure formation by transmission through finite barriers....

  3. ABACUS Bandstructure Models (Winter 2021)

    21 Dec 2021 | | Contributor(s):: Gerhard Klimeck

    In the third session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate several bandstructure tools. With these, students can explore the Standard Periodic Potential aka Kronig-Penney model as well as bandstructure formation by transmission through finite barriers...

  4. IWCN 2021: How to Preserve the Kramers-Kronig Relation in Inelastic Atomistic Quantum Transport Calculations

    15 Jul 2021 | | Contributor(s):: Daniel Alberto Lemus, James Charles, Tillmann Christoph Kubis

    The nonequilibrium Green’s function method (NEGF) is often used to predict quantum transport in atomically resolved nanodevices. This yields a high numerical load when inelastic scattering is included. Atomistic NEGF had been regularly applied on nanodevices, such as nanotransistors....

  5. IWCN 2021: Interfacial Trap Effects in InAs Gate-all-around Nanowire Tunnel Field- Effect Transistors: First-Principles-Based Approach

    15 Jul 2021 | | Contributor(s):: Hyeongu Lee, SeongHyeok Jeon, Cho Yucheol, Mincheol Shin

    In this work, we investigated the effects of the traps, Arsenic dangling bond (AsDB) and Arsenic anti-site (AsIn) traps, in InAs gate-all-around nanowire TFETs, using the trap Hamiltonian obtained from the first-principles calculations. The transport properties were treated by nonequilibrium...

  6. IWCN 2021: Ab initio Quantum Transport Simulation of Lateral Heterostructures Based on 2D Materials: Assessment of the Coupling Hamiltonians

    14 Jul 2021 | | Contributor(s):: Adel Mfoukh, Marco Pala

    Lateral heterostructures based on lattice-matched 2D materials are a promising option to design efficient electron devices such as MOSFETs [1], tunnel-FETs [2] and energy-filtering FETs [3]. In order to rigorously describe the transport through such heterostructures, an ab-initio approach based...

  7. IWCN 2021: Thermoelectric Properties of Complex Band and Nanostructured Materials

    14 Jul 2021 | | Contributor(s):: Neophytos Neophytou, Patrizio Graziosi, Vassilios Vargiamidis

    In this work, we describe a computational framework to compute the electronic and thermoelectric transport in materials with multi-band electronic structures of an arbitrary shape by coupling density function theory (DFT) bandstructures to the Boltzmann Transport Equation (BTE).

  8. Atomistic Green’s Functions: The Beauty of Self-energies

    28 Oct 2020 | | Contributor(s):: Tillmann Christoph Kubis

    This presentation gives an introduction to NEGF. It will be explained how self-energies cause NEGF to fundamentally differ from most other quantum methods. Atomistic examples of phonon and impurity scattering self-energies agree quantitatively with experiments.

  9. Bandstructure Effects in Nano Devices With NEMO: from Basic Physics to Real Devices and to Global Impact on nanoHUB.org

    08 Mar 2019 | | Contributor(s):: Gerhard Klimeck

    This presentation will intuitively describe how bandstructure is modified at the nanometer scale and what some of the consequences are on the device performance.

  10. NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool: From Basic Physics to Real Devices and to Global Impact on nanoHUB.org

    10 Nov 2016 | | Contributor(s):: Gerhard Klimeck

    The Nanoelectronic Modeling tool suite NEMO5 is aimed to comprehend the critical multi-scale, multi-physics phenomena and deliver results to engineers, scientists, and students through efficient computational approaches. NEMO5’s general software framework easily includes any kind of...

  11. NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool

    19 Sep 2016 | | Contributor(s):: Gerhard Klimeck

    The Nanoelectronic Modeling tool suite NEMO5 is aimed to comprehend the critical multi-scale, multi-physics phenomena and deliver results to engineers, scientists, and students through efficient computational approaches. NEMO5’s general software framework easily includes any kind of...

  12. Atomistic Modeling of Nano Devices: From Qubits to Transistors

    13 Apr 2016 | | Contributor(s):: Rajib Rahman

    In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange...

  13. Self-energies: Opening Doors for Nanotechnology

    07 Apr 2016 | | Contributor(s):: Tillmann Christoph Kubis

    In this talk, it will be shown how the concept of self-energies can be used to interface all these fields into the same nanotechnology modeling framework. Self-energies are most commonly used in the quantum transport method of nonequilibrium Green’s functions (NEGF). The NEGF method is...

  14. Phonon Interactions in Single-Dopant-Based Transistors: Temperature and Size Dependence

    25 Nov 2015 | | Contributor(s):: Marc Bescond, Nicolas Cavassilas, Salim Berrada

    IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use a 3d real-space non-equilibrium green': ; s function (negf) approach where electron-phonon...

  15. Mode Space Tight Binding Model for Ultra-Fast Simulations of III-V Nanowire MOSFETs and Heterojunction TFETs

    13 Nov 2015 | | Contributor(s):: Aryan Afzalian, Jun Huang, Hesameddin Ilatikhameneh, Santiago Alonso Perez Rubiano, Tillmann Christoph Kubis, Michael Povolotskyi, Gerhard Klimeck

    IWCE 2015 presentation.  we explore here the suitability of a mode space tight binding algorithm to various iii-v homo- and heterojunction nanowire devices. we show that in iii-v materials, the number of unphysical modes to eliminate is very high compared to the si case previously reported...

  16. Density Functional Tight Binding (DFTB) Modeling in the Context of Ultra-Thin Silicon-on-Insulator MOSFETs

    10 Oct 2015 | | Contributor(s):: Stanislav Markov

    IWCE 2015 presentation. We investigate the applicability of density functional tight binding (DFTB) theory [1][2], coupled to non-equilibrium Green functions (NEGF), for atomistic simulations of ultra-scaled electron devices, using the DFTB+ code [3][4]. In the context of ultra-thin...

  17. Non-Equilibrium Green's Function (NEGF): A Different Perspective

    18 Sep 2015 | | Contributor(s):: Supriyo Datta

    The NEGF method was established in the 1960’s through the classic work of Keldysh and others [1] using the methods of many- body perturbation theory (MBPT) and this approach is widely used in the literature [2]. By contrast I have introduced a different approach starting with the...

  18. Tutorial 4a: High Bias Quantum Transport in Resonant Tunneling Diodes

    29 Mar 2011 | | Contributor(s):: Gerhard Klimeck

    Outline:Resonant Tunneling Diodes - NEMO1D: Motivation / History / Key InsightsOpen 1D Systems: Transmission through Double Barrier Structures - Resonant TunnelingIntroduction to RTDs: Linear Potential DropIntroduction to RTDs: Realistic Doping ProfilesIntroduction to RTDs: Relaxation Scattering...

  19. Lecture 3: Introduction to NEGF

    08 Sep 2010 | | Contributor(s):: Supriyo Datta

  20. Nonequilibrium Green’s functions theory: Transport and optical gain in THz quantum cascade lasers

    26 Mar 2010 | | Contributor(s):: Tillmann Christoph Kubis

    Quantum cascade lasers (QCLs) are promising sources of coherent THz radiation. However, state of the art THz-QCLs are still limited to cryogenic temperatures. The charge transport in these QCLs is subject to coherent quantum phenomena, such as quantum tunneling, confinement and interferences as...