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The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.
Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.
ECE 495N: Fundamentals of Nanoelectronics Lecture Notes (Fall 2009)
04 Feb 2010 | | Contributor(s):: Mehdi Salmani Jelodar, Supriyo Datta (editor)
Lecture notes for the Fall 2009 teaching of ECE 495: Fundamentals of Nanoelectronics.
2003 Molecular Conduction Workshop Agenda
out of 5 stars
09 Jul 2003 |
This workshop brought together leading groups in this field to discuss status and key challenges in molecular electronics. Both experimental and theoretical/modeling efforts were discussed.
2004 Computational Materials Science Summer School
07 Jun 2004 |
This short course will explore a range of computational approaches relevant for nanotechnology.
2004 Linking Bio and Nano Symposium
26 Jul 2004 |
Explore ways universities can work together in Bio-NanoTechnology. Discover research opportunities in this emerging area. Network with professionals and researchers who share common interests. Hear the latest on current research topics
2004 Molecular Conduction Workshop
08 Jul 2004 |
The tutorials supplied below were part of the Molecular Conduction Workshop held at Northwestern University in July of 2004.
2009 NCN@Purdue Summer School: Electronics from the Bottom Up
09 Jul 2009 | | Contributor(s):: Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller
The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on laboratory session will be available in the afternoons.
3D Topological Insulator Nanowire NEGF Simulation on GPU
23 May 2015 | | Contributor(s):: Gaurav Gupta
This code developed in C and CUDA simulates the carrier transport in three-dimensional (3D) topological insulator (TI) nanowire, with Bi2Se3 as exemplar material, with or without impurities, edge defects, acoustic phonons and vacancies for semi-infinite or metallic...
A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006 | | Contributor(s):: Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the effect of...
A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
30 Oct 2006 | | Contributor(s):: , POLIZZI ERIC, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional quantum mechanical simulation...
A Top-Down Introduction to the NEGF Approach
14 Jun 2004 | | Contributor(s):: Mark Lundstrom
A Top-Down Introduction to the NEGF Approach
ANGEL - A Nonequilibrium Green Function Solver for LEDs
18 Jan 2010 | | Contributor(s):: sebastian steiger
An MPI-parallelized implementation of 1-D NEGF for heterostructures. Includes off-diagonal scattering. Effective mass band structure for electrons and holes. The online tool only provides basic NEGF functionality without scattering.
ANGEL - A Nonequilibrium Green's Function Solver for LEDs
06 Feb 2010 | | Contributor(s):: sebastian steiger
Introducing ANGEL, a Nonequilibrium Green’s Function code aimed at describing LEDs.ANGEL uses a description close to the classic NEMO-1D paper (Lake et al., JAP 81, 7845 (1997)) to model quantum transport in a light-emitting diode (LED).ANGEL is the first 1D-heterostructure NEGF to include the...
Application of the Keldysh Formalism to Quantum Device Modeling and Analysis
14 Jan 2008 | | Contributor(s):: Roger Lake
The effect of inelastic scattering on quantum electron transport through layered semi-conductor structures is studied numerically using the approach based on the non-equilibrium Green's function formalism of Keldysh, Kadanoff, and Baym. The Markov assumption is not made, and the energy coordinate...
Atomistic Green's Function Method 1-D Atomic Chain Simulation
16 Apr 2007 | | Contributor(s):: Zhen Huang, Wei Zhang, Timothy S Fisher, Sridhar Sadasivam
Calculation of Thermal Conductance of an Atomic Chain
Atomistic Modeling of Nano Devices: From Qubits to Transistors
12 Apr 2016 | | Contributor(s):: Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange...
Bandstructure in Nanoelectronics
01 Nov 2005 | | Contributor(s):: Gerhard Klimeck
This presentation will highlight, for nanoelectronic device examples, how the effective mass approximation breaks down and why the quantum mechanical nature of the atomically resolved material needs to be included in the device modeling. Atomistic bandstructure effects in resonant tunneling...
BNC Annual Research Symposium: Nanoscale Energy Conversion
23 Apr 2007 | | Contributor(s):: Timothy S Fisher
This presentation is part of a collection of presentations describing the projects, people, and capabilities enhanced by research performed in the Birck Center, and a look at plans for the upcoming year.
Can numerical “experiments” INSPIRE physical experiments?
20 Dec 2007 | | Contributor(s):: Supriyo Datta
This presentation was one of 13 presentations in the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.
Carbon Nanotube Electronics: Modeling, Physics, and Applications
28 Jun 2013 | | Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...
30 Oct 2006 | | Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-κ gate...