-
ECE 495N: Fundamentals of Nanoelectronics Lecture Notes (Fall 2009)
04 Feb 2010 | | Contributor(s):: Mehdi Salmani Jelodar, Supriyo Datta (editor)
Lecture notes for the Fall 2009 teaching of ECE 495: Fundamentals of Nanoelectronics.
-
2003 Molecular Conduction Workshop Agenda
09 Jul 2003 |
This workshop brought together leading groups in this field to discuss status and key challenges in molecular electronics. Both experimental and theoretical/modeling efforts were discussed.
-
2004 Computational Materials Science Summer School
07 Jun 2004 |
This short course will explore a range of computational approaches relevant for nanotechnology.
-
2004 Linking Bio and Nano Symposium
26 Jul 2004 |
Explore ways universities can work together in Bio-NanoTechnology. Discover research opportunities in this emerging area. Network with professionals and researchers who share common interests. Hear the latest on current research topics
-
2004 Molecular Conduction Workshop
08 Jul 2004 |
The tutorials supplied below were part of the Molecular Conduction Workshop held at Northwestern University in July of 2004.
-
2009 NCN@Purdue Summer School: Electronics from the Bottom Up
09 Jul 2009 | | Contributor(s):: Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller
The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on laboratory session will be available in the afternoons.
-
3D Topological Insulator Nanowire NEGF Simulation on GPU
23 May 2015 | | Contributor(s):: Gaurav Gupta
This code developed in C and CUDA simulates the carrier transport in three-dimensional (3D) topological insulator (TI) nanowire, with Bi2Se3 as exemplar material, with or without impurities, edge defects, acoustic phonons and vacancies for semi-infinite or metallic...
-
A Matlab 1D-Poisson-NEGF simulator for 2D FET
04 Mar 2024 | | Contributor(s):: Chien-Ting Tung
A Matlab 1D-Poisson-NEGF solver to calculate a 2D FET where the channel is only one atom thick. It assumes the channel thickness is only one point and solves the 1D Poisson and NEGF self-consistently.It also utilizes a Fermi-Dirac integral table from...
-
A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006 | | Contributor(s):: Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the effect of...
-
A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
30 Oct 2006 | | Contributor(s):: Jing Wang, POLIZZI ERIC, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional quantum mechanical simulation...
-
A Top-Down Introduction to the NEGF Approach
14 Jun 2004 | | Contributor(s):: Mark Lundstrom
A Top-Down Introduction to the NEGF Approach
-
ABACUS Bandstructure Models (Spring 2022)
04 May 2022 | | Contributor(s):: Gerhard Klimeck
In the third session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate several bandstructure tools. With these, students can explore the Standard Periodic Potential aka Kronig-Penney model as well as bandstructure formation by transmission through finite barriers....
-
ABACUS Bandstructure Models (Winter 2021)
08 Dec 2021 | | Contributor(s):: Gerhard Klimeck
In the third session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate several bandstructure tools. With these, students can explore the Standard Periodic Potential aka Kronig-Penney model as well as bandstructure formation by transmission through finite barriers...
-
ABACUS Tool Suite and Bandstructure and Band Models (Fall 2023)
22 Aug 2023 | | Contributor(s):: Gerhard Klimeck
In the third session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate several bandstructure tools. With these, students can explore the Standard Periodic Potential aka Kronig-Penney model as well as bandstructure formation by transmission through finite barriers....
-
ANGEL - A Nonequilibrium Green Function Solver for LEDs
18 Jan 2010 | | Contributor(s):: sebastian steiger
An MPI-parallelized implementation of 1-D NEGF for heterostructures. Includes off-diagonal scattering. Effective mass band structure for electrons and holes. The online tool only provides basic NEGF functionality without scattering.
-
ANGEL - A Nonequilibrium Green's Function Solver for LEDs
06 Feb 2010 | | Contributor(s):: sebastian steiger
Introducing ANGEL, a Nonequilibrium Green’s Function code aimed at describing LEDs.ANGEL uses a description close to the classic NEMO-1D paper (Lake et al., JAP 81, 7845 (1997)) to model quantum transport in a light-emitting diode (LED).ANGEL is the first 1D-heterostructure NEGF to include the...
-
Application of the Keldysh Formalism to Quantum Device Modeling and Analysis
14 Jan 2008 | | Contributor(s):: Roger Lake
The effect of inelastic scattering on quantum electron transport through layered semi-conductor structures is studied numerically using the approach based on the non-equilibrium Green's function formalism of Keldysh, Kadanoff, and Baym. The Markov assumption is not made, and the energy coordinate...
-
Atomistic Green's Function Method 1-D Atomic Chain Simulation
16 Apr 2007 | | Contributor(s):: Zhen Huang, Wei Zhang, Timothy S Fisher, Sridhar Sadasivam
Calculation of Thermal Conductance of an Atomic Chain
-
Atomistic Green’s Functions: The Beauty of Self-energies
16 Sep 2020 | | Contributor(s):: Tillmann Christoph Kubis
This presentation gives an introduction to NEGF. It will be explained how self-energies cause NEGF to fundamentally differ from most other quantum methods. Atomistic examples of phonon and impurity scattering self-energies agree quantitatively with experiments.
-
Atomistic Modeling of Nano Devices: From Qubits to Transistors
12 Apr 2016 | | Contributor(s):: Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange...