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What should be measurement for zener diode simulation in TCAD?


I'm an electronics engineering student working on semiconductor device simulation using VisualTCAD software in my institute.

I design pn junction successfully with p uniform doping as 1*10^16 and n gaussian doping 1*10^19 and plot output IV characteristics.

Problem I m facing is in designing zener diode


1)Since zener has high doping

2) Depletion region is small

I want to know size of p-substrate and n-well and what should be doping concentration. 

Thanks & Regards

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