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The goals of this course are to give the student an understanding of the elements of semiconductor physics and principles of semiconductor devices that (a) constitute the foundation required for an electrical engineering major to take follow-on courses, and (b) represent the essential basic knowledge of the operation and limitations of the three primary electronic devices, 1) p-n junctions, 2) bipolar transistors, and 3) field effect transistors, that either an electrical engineer or a computer engineer will find useful in maintaining currency with new developments in semiconductor devices and integrated circuits in an extended career in either field.

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Amirhossein Khalajhedayati onto Solid State physics

Select tutorials in nanotechnology, a part of the 2010 NCN@Purdue Summer School: Electronics from the Bottom Up.

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tariful azam onto tools

Calculate the Fermi-Dirac integral given the fermi energy and the order of integral

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A Nitthin Ananth onto E Materials

Simulate molecular dynamics using LAMMPS as well as an addition electrochemical force field (EChemDID)

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A Nitthin Ananth onto E Materials

Semi-empirical Molecular Orbital calculations.

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A Nitthin Ananth onto E Materials

Calculate core level x-ray absorption spectra for molecules and crystals

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A Nitthin Ananth onto E Materials

Online IMOD tool for electron tomography

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A Nitthin Ananth onto Imaging

Simulate realistic 1, 2, or 3-dimension nano-optical systems using the FDTD method.

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A Nitthin Ananth onto Imaging

Simulate fields of dimers using a nonlocal model

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A Nitthin Ananth onto Imaging

Calculates the effective diffusivity in a grain boundary network with two types of randomly distributed grain boundaries.

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A Nitthin Ananth onto E Materials

Calculate the carrier concentration for a semiconductor material as a function of doping and temperature.

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A Nitthin Ananth onto E Materials

Calculate the resonance energies and lifetimes of a user-defined potential with a uniform complex-scaling transformation.

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A Nitthin Ananth onto Imaging

Calculate and observe the relationship between current, voltage, resistance, and power.

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A Nitthin Ananth onto E Materials

Simulate dislocation movement, crack propagation, nanowire tensile tests, and simple phase transitions

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A Nitthin Ananth onto Crystal

Simulate crack propagations through materials under applied loads.

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A Nitthin Ananth onto Crystal

Generates 3D surface contour plot of the Young’s modulus from a compliance matrix (Sij).

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A Nitthin Ananth onto E Materials

Helps the user to determine the thickness of an overlayer material from XPS experiment data.

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A Nitthin Ananth onto E Materials

Understand how to calculate the equivalent impedance of circuit elements combined in parallel and/or series, and understand equivalent impedance calculations in rectangular and polar form.

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A Nitthin Ananth onto E Materials

SIS materials

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A Nitthin Ananth onto E Materials

Residency Requirements

This link provides Indiana residency requirements.  It is especially important for students whose parents live or move outside of Indiana.

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Tanya Faltens onto Purdue University Information

Fall 2008

This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies. The course consists of three parts. Part 1 treats silicon MOS and MOSFET fundamentals as well as second order effects such as gate leakage and quantum mechanical effects. Short channel effects, device scaling, and fabrication processes and reliability are the subject of Part 2. In Part …

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Yu-chuan Chen onto test

This graduate level course surveys sub-micrometer pattern-transfer techniques with applications in semiconductor manufacturing, data storage, photonics, and surface engineering.

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Yizhou Fang onto photolithography