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Title: Non-contact temperature measurement for semiconductor device fabrication and evaluation

Abstract:

Optical methods of temperature measurement such as radiation thermometry and thermoreflectance are essential tools for thermal measurement in semiconductor device fabrication and evaluation due to such features as fast response and high special resolution. In this presentation, practical implementations of these techniques in industrial scenes are presented. The first is a silicon wafer surface temperature monitoring system by thermoreflectance during plasma etching. To overcome such difficulties as low sensitivity and limitation in installation space and position for in-situ measurements, differential thermoreflectance utilizing two orthogonal polarizations was introduced. The second is radiation thermometry of silicon wafer surface temperature during flash lamp annealing (FLA). A novel approach for emissivity compensated radiation thermometry was applied to sub-millisecond response measurement. Results of thermal profile measurements conducted on a FLA chamber are described. An extension of this emissivity compensation technique to infrared thermal imagers is presented, intended for monitoring of local heat generation in highly-integrated or high-power semiconductor devices.

Short biography:

Prime Senior Researcher at the National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology (NMIJ, AIST). Received BS and MS degrees from the University of Tokyo in 1983 and 1985, respectively, in Instrumentation Physics, and MS degree from Caltech in 1992 in Electrical Engineering. Spent 13 years in NKK, working on in-situ optical measurement in steel production, prior to joining NMIJ, AIST. Current research activities include high-temperature standards, industrial non-contact temperature measurements, and calibration of earth observing space-borne hyperspectral sensors.