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Title: Recent advances in 4H-SiC crystal growth and defect control for high-performance power devices

Bio: Hidekazu Tsuchida, Dr., Deputy Associate Vice President, Sector Leader, Electronic Materials, Materials Science Research Laboratory, CRIEPI  Entered CRIEPI in 1992 and started SiC crystal growth and characterization in 1994 toward realizing next generation power devices for high-voltage power transmission and distribution. Recent research interests include fast 4H-SiC bulk growth by high-temperature CVD, large-diameter thick epitaxial growth and defect control for high-quality crystals and high-performance devices. Since 2016, chief secretary of Advanced Power Semiconductor Division of Japanese Applied Physics Society.

Abstract: After brief introduction of CRIEPI and the research topics in Electronic Materials Sector of Materials Science Research Laboratory, our recent achievements in 4H-SiC crystal growth and defect imaging and control techniques will be shown. The topics will include fast CVD bulk growth, large-diameter epitaxial growth, high-resolution or 3D imaging of extended defects and control of point and extended defects, toward high-throughput production of high-quality 4H-SiC wafers and realizing high-voltage and low-loss power devices.

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