Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model
08 Apr 2015 | Contributor(s): Chi-Shuen Lee, H.-S. Philip Wong | doi:10.4231/D3BK16Q68
The VSCNFET model captures the dimensional scaling properties and includes parasitic resistance, capacitance, and tunneling leakage currents. The model aims for CNFET technology assessment for the sub-10-nm technology nodes.
30 Mar 2015 | Contributor(s): Chi-Shuen Lee, H.-S. Philip Wong | doi:10.4231/D38W3835S