Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
Papers | 28 Jun 2013 | Contributor(s): Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...
Surface scattering: Made simple
Papers | 03 Sep 2010 | Contributor(s): Dmitri Nikonov, Himadri Pal
Surface scattering in a quantum well.
Scattering in NEGF: Made simple
Papers | 09 Nov 2009 | Contributor(s): Dmitri Nikonov, Himadri Pal, George Bourianoff
Formalism for describing electron-phonon scattering, surface scattering, and spin relaxation is dervied for the Keldysh non-equilibrium Green's functions (NEGF) method. Approximation useful for efficient numerical solution are described. The specific case of the nanoMOS simulator is...
MOSFet
Tools | 30 Mar 2006 | Contributor(s): Shaikh S. Ahmed, Saumitra Raj Mehrotra, SungGeun Kim, Matteo Mannino, Gerhard Klimeck, Dragica Vasileska, Xufeng Wang, Himadri Pal, Gloria Wahyu Budiman
Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)
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NCN@Purdue Students
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Network for Computational Nanotechnology (NCN) is a National Science Foundation (NSF) gateway and research network with a mission to enable education and research in nanoscience for nanotechnology applications. NCN currently focuses on nanoelectronics, nanoelectromechanics, nanomaterials,...
NCN@Purdue student seminar series
The NCN@Purdue student seminar series provides a platform for students to present their research and get feedback from fellow NCN students. This is an excellent opportunity for the presenter to practice and refine a talk for an upcoming conference, as well as improve presentation skills. It is...
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