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A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
0.0 out of 5 stars
19 Oct 2006 | Papers | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the effect of...
nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs
06 Oct 2006 | Papers | Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of so-called Büttiker probes. The double gate device geometry permits an efficient mode space approach that...
9.9 out of 5 stars
19 May 2006 | Tools | Contributor(s): , Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Yang Liu, Yunfei Gao, Xufeng Wang, Mark Lundstrom
2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs
The nanoHUB Science Gateway
07 Mar 2006 | Online Presentations | Contributor(s): Sebastien Goasguen
The TeraGrid Science Gateways program was initiated to expand the influence of TeraGrid resources through back-end integration into community developed portals and desktop applications. Nancy Wilkins-Diehr, SDSC, TeraGrid Area Director for Science Gateways will give a brief overview of the...
NanoMOS 2.5 Source Code Download
4.5 out of 5 stars
22 Feb 2005 | Downloads | Contributor(s): , Sebastien Goasguen
NanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of five transport models is available (drift-diffusion, classical ballistic, energy transport, quantum ballistic, and quantum diffusive). The transport models treat quantum effects in the...
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