Peking University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model
18 Jun 2019 | Contributor(s): Weijie Xu, Yudi Zhao, Haitong Li, Jinfeng Kang, Xiaoyan Liu, Peng Huang | doi:10.21981/GG8R-0N73
The Peking University RRAM Model is a SPICE-compatible compact model which is designed for simulation of metal-oxide based RRAM devices. It captures typical DC and AC electrical behaviors of the RRAM devices with physics-based model descriptions.
27 Mar 2019 | Contributor(s): Weijie Xu, Jinfeng Kang | doi:10.21981/MAGP-1C19
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