09 Demonstration of Vertical GaN PN Diode with Step-etched Triple zone JTE
Online Presentations | 14 Oct 2020 | Contributor(s): Hyun-Soo Lee, Yuxuan Zhang, Zhaoying Chen, Mohammad Wahidur Rahman, Hongping Zhao, Siddharth Rajan
We have demonstrated significantly improved BV of vertical GaN PN diode with STJTE without any degradation of forward characteristics. This is the first demonstration of a step-etched multiple zone edge termination for III-Nitride technology.
Wide and Ultra-Wide Bandgap Semiconductors for Optoelectronics and Electronics
Online Presentations | 06 Nov 2017 | Contributor(s): Hongping Zhao
In this talk, novel heterostructures using closely-lattice matched GaN/ZnGeN2 will be presented with two examples: (i) a novel type-II quantum well design based on InGaN/ZnGeN2 heterostructures for high efficiency light emitter devices; and (ii) a coupled quantum well design based on GaN/ZnGeN2...
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