Muhammad Usman was graduated from the Electrical & Computer Engineering Department of Purdue University in August 2010. His PhD thesis was theoretical modelling and simulations of InGaAs/GaAs quantum dots. He is currently working as a research fellow at CQC2T and School of Physics in University of Melbourne. Prior to this, he worked as a researcher at Tyndall National Institute from 2010 to 2014. His area of research is theory, modeling, and simulations of semiconductor materials, alloys, heterostructures, and optoelectronic devices. Dr. Usman has/had several collaborations with the renowned experimental groups at Imperial College London UK, Kobe University Japan, National Nanotechnology Lab Italy, Surrey University UK, Philipps University Marburg Germany, etc.
Dr. Usman's work at Tyndall National Institute involved electronic structure theory and optical properties of the bismuth-based III-V alloys (GaBiAs, GaBiNAs, InGaBiAs, AlGaBiAs, etc). The QW devices based on these novel alloys are expected to revolutionize the design of next generation semiconductor lasers working at the telecommunication wavelengths. This European Union (FP-7) project which is being done in collaboration with the experimental and industry partners involves establishing the first-ever tight binding models for the bismide materials and the subsequent derivations of the 12/14-band k.p models to study the electronic structure and loss/gain mechanisms in the bismide quantum well nano-structures. Further details about this project can be found at: http://www.biancho.org/
Dr. Usman's most recent work at CQC2T, University of Melbourne involves theoretical modelling of donor impurities (P, As, etc.) in Silicon devices for the implementation of qubit. Further information is present at: http://www.cqc2t.org.
Dr. Usman is also affiliated with NCN and nanoHub.org. He is a member of American Physical Society (APS) and IEEE.