Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
Quantum dots have a small, countable number of electrons confined in a small space. Their electrons are confined by having a tiny bit of conducting material surrounded on all sides by an insulating material. If the insulator is strong enough, and the conducting volume is small enough, then the confinement will force the electrons to have discrete (quantized) energy levels. These energy levels can influence the device behavior at a macroscopic scale, showing up, for example, as peaks in the conductance. Because of the quantized energy levels, quantum dots have been called "artificial atoms." Neighboring, weakly-coupled quantum dots have been called "artificial molecules."
Learn more about quantum dots from the many resources on this site, listed below. More information on Quantum dots can be found here.
Quantum Dot Lab - A Novel Visualization Tool using Jupyter
09 Oct 2017 | | Contributor(s):: Khaled Aboumerhi
As semiconductor devices scale down into the nano regime, deep understanding of quantum mechanical properties of nano-structures become increasingly essential. Quantum dots are famous examples of such nano-structures. Quantum dots have attracted a lot of attention over the last two decades due...
Adam Marc Munder
Synthesis and Characterization of CdSe Qunatum Dots
11 Jan 2017 | | Contributor(s):: Nicholas Blake
In this laboratory, students will study how surfactant-based chemistry can be used to synthesize CdSe quantum dots and study how the size of the quantum dots can be controlled by varying reaction time. The laboratory will demonstrate how the color of these quantum dots can be connected to...
jesus alexis Gonzalez
Valley Dependent g-factors in Silicon: Role of Spin-Orbit and Micromagnets
13 Dec 2016 | | Contributor(s):: Rajib Rahman
In this talk I will show that spin splittings in silicon quantum dots are inherently valley-dependent. Interface disorder, such as monoatomic steps, can strongly affect the intrinsic spin-orbit coupling and can cause device-to-device variations in g-factors. I will also describe the anisotropy...
E304 L8.1.3: Nanophotonics - Quantum Dots
15 Jun 2016 |
Universal Behavior of Strain in Self-assembled Quantum Dots
05 May 2016 | | Contributor(s):: Hesameddin Ilatikhameneh, Tarek Ahmed Ameen, Gerhard Klimeck, Rajib Rahman
This resource contains the universal behavior strain files produced by Nemo5. Attached also a Matlab script that can utilize the these compact descriptive files to produce the full strain distribution. Supported QD shapes; Cuboid, Dome, Cone, and Pyramid. Supported material systems;...
Screening Effect on Electric Field Produced by Spontaneous Polarization in ZnO Quantum Dot in Electrolyte
05 Jan 2016 | | Contributor(s):: Xinia Meshik, Min S. Choi, Mitra Dutta, Michael Stroscio
IWCE 2015 presentation. in this paper, the calculation of the strength of the electrostatic field produced by zno quantum dots due to the spontaneous polarization in a physiological electrolyte and its application on retinal horizontal cells are presented.
Venkata Abhinav Korada
Structure and Morphology of Silicon-Germanium Thin Films
07 Feb 2015 | | Contributor(s):: Brian Demczyk
This presentation describes the growth of (Si,Ge & SiGe) thin films on Si and Ge (001) and (111) substrates by ultrahigh vacuum chemical vapor deposition (UHVCVD). Thin films were characterized structurally by conventional and high-resolution transmission electron microscopy (TEM) and...
Extinction, Scattering and Absorption efficiencies of single and multilayer nanoparticles
02 Sep 2014 |
Posted by Tanya Faltens
Introduction to Quantum Dots and Modeling Needs/ Requirements
28 Aug 2014 |
Posted by Tanya Faltens
Structure and Morphology of Silicon Germanium Thin Films
30 Dec 2013 | | Contributor(s):: Brian Demczyk
Single layer silicon and germanium films as well as nominally 50-50 silicon-germanium alloys were deposited on single crystal silicon and germanium (001) and (111) substrates by ultrahigh vacuum chemical vapor deposition. These films spanned the range of + 4 % film-substrate lattice mismatch. A...