Peking University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model 2.1.1

By Weijie Xu1, Yudi Zhao1, Haitong Li1, Jinfeng Kang1, Xiaoyan Liu1, Peng Huang1

Peking University

The Peking University RRAM Model is a SPICE-compatible compact model which is designed for simulation of metal-oxide based RRAM devices. It captures typical DC and AC electrical behaviors of the RRAM devices with physics-based model descriptions.

Listed in Compact Models

Additional materials available

Version 2.1.1 - published on 18 Jun 2019 doi:10.21981/GG8R-0N73 - cite this

Licensed under NEEDS Modified CMC License according to these terms

Versions

Version Released DOI Handle Status
2.1.1 Jun 18, 2019 10.21981/GG8R-0N73 published view version »
2.1.0 Mar 27, 2019 10.21981/MAGP-1C19 published view version »