Peking University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model 2.1.1
The Peking University RRAM Model is a SPICE-compatible compact model which is designed for simulation of metal-oxide based RRAM devices. It captures typical DC and AC electrical behaviors of the RRAM devices with physics-based model descriptions.
Listed in Compact Models
Additional materials available
Version 2.1.1 - published on 18 Jun 2019 doi:10.21981/GG8R-0N73 - cite this
Licensed under NEEDS Modified CMC License according to these terms
Versions
Version | Released | DOI Handle | Status | |
---|---|---|---|---|
2.1.1 | Jun 18, 2019 | 10.21981/GG8R-0N73 | published | view version » |
2.1.0 | Mar 27, 2019 | 10.21981/MAGP-1C19 | published | view version » |