The THM-OTFT compact model is coded in Verilog-A and the result of several Ph D projects carried out at THM (Germany) in collaboration with URV (Spain). 

A charge-based DC compact model calculates the device terminal current-voltage (I-V) characteristics of an organic thin-film transistor (OTFT) in coplanar or staggered architecture. Non-linear injection due to Schottky barriers at source and drain contacts are taken into account. A quasi-static capacitance model allows for AC or transient simulations. Layout dependent fringing and overlap capacitances are included. Furthermore, the model includes expressions for low-frequency noise and statistical variability.

Additionally, the model includes an experimental option for capturing the non-quasistatic behavior of long-channel OTFTs using a channel-segmentation approach.

• THM-OTFT Compact Model 1.0.0 Verilog-A(ZIP | 85 KB)
• THM-OTFT Compact Model 1.0.0 Benchmarks(ZIP | 3 MB)
• THM-OTFT Compact Model 1.0.0 Parameters(ZIP | 1 MB)
• THM-OTFT Compact Model 1.0.0 Experimental Data(ZIP | 182 KB)
• THM-OTFT Compact Model 1.0.0 Manual(PDF | 3 MB)
• License terms

Researchers should cite this work as follows:

• Kloes, A.; Leise, J. S.; Pruefer, J.; Nikolaou, A.; Darbandy, G. (2022). THM-OTFT Compact Model. nanoHUB. doi:10.21981/Y7S6-EZ63

  BibTex | EndNote

1. Circuit Simulation
2. Compact Model
3. OFET
4. organic electronics
5. Organic Field Effect Transistors
6. OTFTs
7. physics-based