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WHiTe Compact Models
19 Mar 2023 | Compact Models | Contributor(s):
By Neal Graham Wood
This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...
https://nanohub.org/publications/339/?v=12
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Compact Model Vortex-STNO
17 Nov 2022 | Compact Models | Contributor(s):
By Sonal Shreya1, Farshad Moradi1
Aarhus University, Denmark
we present a Verilog-A-based analytical model of a vortex spin-torque nano oscillator (V-STNO) for enabling circuit-level simulation. The model presented here is functional for both linearand...
https://nanohub.org/publications/532/?v=1
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WHiTe Compact Models
14 Jun 2022 | Compact Models | Contributor(s):
By Neal Graham Wood
This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...
https://nanohub.org/publications/339/?v=11
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THM-OTFT Compact Model
24 May 2022 | Compact Models | Contributor(s):
By Alexander Kloes1, Jakob Simon Leise1, Jakob Pruefer1, Aristeidis Nikolaou1, Ghader Darbandy1
THM University of Applied Sciences
Charge-based compact model for the DC and AC simulation of organic TFTs
https://nanohub.org/publications/456/?v=1
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THM-TFET Compact Model
30 Apr 2022 | Compact Models | Contributor(s):
By Alexander Kloes1, Fabian Horst2, Anita Farokhnejad3, Michael Graef4
1. Technische Hochschule Mittelhessen 2. Bender GmbH & Co. KG 3. IMEC 4. Infineon Technologies
THM-TFET is a compact model for a double-gate Tunnel-FET, is provided in Verilog-A code and allows for DC, AC and transient circuit simulation.
https://nanohub.org/publications/427/?v=1
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CCAM Compact Carbon Nanotube Field-Effect Transistor Model
27 Apr 2022 | Compact Models | Contributor(s):
By Michael Schroter1, Manojkumar Annamalai2, Max Haferlach3, Martin Claus3
1. UCSD 2. Technische Universitaet Dresden 3. Technische Universität Dresden
CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.
https://nanohub.org/publications/62/?v=3
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PSPHV LDMOS
19 Nov 2021 | Compact Models | Contributor(s):
By Colin McAndrew1, kejun xia2
1. Freescale Semiconductor 2. TSMC
This is an update to version 1.0.6 of the PSPHV LDMOS model (an enhanced PSP103.6 model for the core MOS transistor, an updated JFETIDG model for the drift region, JUNCAP2 for the pn-junction...
https://nanohub.org/publications/475/?v=1
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WHiTe Compact Models
30 Oct 2021 | Compact Models | Contributor(s):
By Neal Graham Wood
This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...
https://nanohub.org/publications/339/?v=10
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Peking University Analog-Switching Resistive Random Access Memory (RRAM) Verilog-A model
13 Jan 2021 | Compact Models | Contributor(s):
By Lixia Han1, Linlin Cai1, Jinfeng Kang1, Xiaoyan Liu1, Peng Huang1
Peking University
The Peking University Analog-switching RRAM physical model can capture the pulse conductance updates of analog RRAM devices rapidly and accurately. The model is described by Verilog-A and can be...
https://nanohub.org/publications/403/?v=1
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Compact NEGF-Based Solver for Double-Gate MOSFETs
17 Nov 2020 | Contributor(s):: Fabian Hosenfeld, Alexander Kloes
Fast simulation of the DC current in a nanoscale double-gate MOSFET including thermionic emission and source-to-drain tunneling current.
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Florida Ferroelectric Tunnel Junction Device Model
09 Sep 2020 | Compact Models | Contributor(s):
By Tong Wu1, Jing Guo1
University of Florida
A compact model of the Ferroelectric Tunnel Junctions (FTJs) device is constructed, using the Wentzel–Kramers–Brillouin (WKB) approximation for tunneling current calculation.
https://nanohub.org/publications/375/?v=1
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Is it feasible to model a 2D-channel FET (i.e., TMD or BP) as a HEMT?
Q&A|Closed | Responses: 0
I'm working on compact models for 2D-channel FETs and I noticed there is a lot of similarities between them and HEMTs. There is something similar to a 2DEG in the 2D-channel FET and the...
https://nanohub.org/answers/question/2320
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WHiTe (Wood-High-Temperature) Compact Models
21 May 2020 | Compact Models | Contributor(s):
By Neal Graham Wood
This package provides a set of 4H silicon carbide high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a junction...
https://nanohub.org/publications/339/?v=4
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PSPHV LDMOS
17 Apr 2020 | Compact Models | Contributor(s):
By Colin McAndrew
Freescale Semiconductor
PSPHV consists of an enhanced PSP103.6 model for thecore MOS transistor, an updated JFETIDG model for thedrift region, JUNCAP2 for the pn-junction diodes,and two 3-terminal MOS capacitors based on...
https://nanohub.org/publications/347/?v=1
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WHiTe (Wood-High-Temperature) Compact Models
16 Apr 2020 | Compact Models | Contributor(s):
By Neal Wood
Toshiba Europe Limited
This package provides a set of 4H silicon carbide high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a junction...
https://nanohub.org/publications/339/?v=3
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WHiTe (Wood-High-Temperature) Compact Models
10 Mar 2020 | Compact Models | Contributor(s):
By Neal Graham Wood
This package provides a set of 4H silicon carbide high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a junction...
https://nanohub.org/publications/339/?v=2
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WHiTe (Wood-High-Temperature) Compact Models
25 Feb 2020 | Compact Models | Contributor(s):
By Neal Graham Wood
This package provides a set of 4H silicon carbide high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a junction...
https://nanohub.org/publications/339/?v=1
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Neal Graham Wood
https://nanohub.org/members/278715
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MD YASIR BASHIR
https://nanohub.org/members/264748
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EPFL HEMT MODEL
14 Aug 2019 | Compact Models | Contributor(s):
By Farzan Jazaeri1, jean-michel sallese, Majid Shalchian2, Matthias Bucher3, Nikolaos Makris4
1. École Polytechnique Fédérale de Lausanne,(EPFL) 2. Amirkabir University of Tehnology 3. Technical University of Crete 4. ECE Technical University of Crete / IESL Foundation for Research and Technology-Hellas
The EPFL HEMT Model is a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and the...
https://nanohub.org/publications/301/?v=1