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Tags: Compact Model

All Categories (1-20 of 32)

  1. MAPP: The Berkeley Model and Algorithm Prototyping Platform

    11 Jan 2016 | Presentation Materials | Contributor(s): Tianshi Wang, Aadithya V Karthik, Jaijeet Roychowdhury

    This presentation is part of the 8th IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) 2015. It provides an introduction to Berkeley Model and Algorithm Prototyping Platform...

    https://nanohub.org/resources/23370

  2. MVS Nanotransistor Model (Silicon)

    02 Dec 2015 | Compact Models | Contributor(s):

    By Shaloo Rakheja1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

    https://nanohub.org/publications/15/?v=4

  3. MVS III-V HEMT model

    01 Dec 2015 | Compact Models | Contributor(s):

    By Shaloo Rakheja1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical...

    https://nanohub.org/publications/71/?v=1

  4. MVS Nanotransistor Model

    01 Dec 2015 | Compact Models | Contributor(s):

    By Shaloo Rakheja1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

    https://nanohub.org/publications/74/?v=1

  5. CCAM Compact Carbon Nanotube Field-Effect Transistor Model

    06 Oct 2015 | Compact Models | Contributor(s):

    By Michael Schroter1, Max Haferlach2, Martin Claus2

    1. UCSD 2. Technische Universität Dresden

    CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.

    https://nanohub.org/publications/62/?v=2

  6. VALint: the NEEDS Verilog-A Checker (BETA)

    21 Jan 2015 | Tools | Contributor(s): Xufeng Wang, Geoffrey Coram, Colin McAndrew

    Verilog-A lint and pretty printer created by NEEDS

    https://nanohub.org/resources/vachecker

  7. A physics-based compact model for thermoelectric devices

    03 Sep 2015 | Papers | Contributor(s): Kyle Conrad

    Thermoelectric devices have a wide variety of potential applications including as coolers, temperature regulators, power generators, and energy harvesters. During the past decade or so, new...

    https://nanohub.org/resources/22756

  8. Thermoelectric Device Compact Model

    01 Sep 2015 | Compact Models | Contributor(s):

    By Xufeng Wang1, Kyle Conrad1, Jesse Maassen1, Mark Lundstrom1

    Purdue University

    The NEEDS thermoelectric compact model describes a homogeneous segment of thermoelectric material and serves as a basic building block for complex electrothermal system.

    https://nanohub.org/publications/80/?v=1

  9. MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model

    29 Aug 2015 | Compact Models | Contributor(s):

    By Ujwal Radhakrishna1, Dimitri Antoniadis2

    1. Massachusetts Institute of Technology (MIT) 2. Massachusetts Institute of Technology

    MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) model is a charge based physical model for HV-GaN HEMTs suitable for power switching applications.

    https://nanohub.org/publications/73/?v=1

  10. Compact model for Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction

    03 Jul 2015 | Compact Models | Contributor(s):

    By You WANG1, Yue ZHANG2, Jacques-Olivier Klein3, Thibaut Devolder3, Dafiné Ravelosona3, Claude Chappert3, Weisheng Zhao2

    1. Institut Mines-Téléecom, Télécom-ParisTech, LTCI-CNRS-UMR 5141, Paris CEDEX 13, 75634, France 2. Spintronics Interdisciplinary Center, Beihang University, Beijing 100191, China 3. Institut d’Electronique Fondamentale, CNRS UMR 8622, University of Paris-Sud 11, 91405 Orsay, France

    This STT PMA MTJ model integrates the physical models of static, dynamic behaviors and reliability issues, which can be used to perform more accurate and complex reliability analysis of complex...

    https://nanohub.org/publications/56/?v=1

  11. Verilog-A implementation of the compact model for organic thin-film transistors oTFT

    14 Jun 2015 | Compact Models | Contributor(s):

    By Ognian Marinov

    McMaster University, Hamilton, ON, Canada

    Compact model oTFT supports mobility bias enhancement, contact effects, channel modulation and leakage in organic thin-film transistors. Version 2.04.01 “mirrors” TFT in all regimes of...

    https://nanohub.org/publications/63/?v=1

  12. Berkeley VCSEL Compact Model

    28 May 2015 | Compact Models | Contributor(s):

    By Adair Gerke1, Connie J. Chang-Hasnain1

    University of California, Berkeley

    The U.C. Berkeley Vertical Cavity Surface Emitting Laser (VCSEL) Compact Model provides a circuit simulator compatible Verilog-A model of VCSEL lasers, primarily for use in designing...

    https://nanohub.org/publications/60/?v=1

  13. III-V Tunnel FET Model

    20 Apr 2015 | Compact Models | Contributor(s):

    By Huichu Liu1, Vinay Saripalli1, Vijaykrishnan Narayanan1, Suman Datta1

    Penn State University

    The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.

    https://nanohub.org/publications/12/?v=2

  14. Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model

    08 Apr 2015 | Compact Models | Contributor(s):

    By Chi-Shuen Lee1, H.-S. Philip Wong1

    Stanford University

    The VSCNFET model captures the dimensional scaling properties and includes parasitic resistance, capacitance, and tunneling leakage currents. The model aims for CNFET technology assessment for the...

    https://nanohub.org/publications/42/?v=2

  15. UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model

    25 Mar 2015 | Compact Models | Contributor(s):

    By Wei Cao1, Kaustav Banerjee1

    University of California Santa Barbara

    a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions

    https://nanohub.org/publications/51/?v=1

  16. mCell Model

    19 Jan 2015 | Compact Models | Contributor(s):

    By David M. Bromberg1, Daniel H. Morris1

    Carnegie Mellon University

    This model is a hybrid physics/empirical compact model that describes digital switching behavior of an mCell logic devices, where a write current moves a domain wall to switch the resistance of a...

    https://nanohub.org/publications/13/?v=2

  17. R3

    21 Nov 2014 | Compact Models | Contributor(s):

    By Colin McAndrew

    Freescale Semiconductor, Inc.

    Compact model for polysilicon (poly) resistors, 3-terminal JFETs, and diffused resistors.

    https://nanohub.org/publications/26/?v=1

  18. FET pH Sensor Model

    03 Nov 2014 | Compact Models | Contributor(s):

    By Piyush Dak1, Muhammad A. Alam1

    Purdue University

    The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.

    https://nanohub.org/publications/11/?v=1

  19. Non-Local Inverse Spin Hall Effect Experiment

    26 Oct 2014 | Downloads | Contributor(s): Kerem Yunus Camsari, Samiran Ganguly

    The Modular Spintronics Library can be used to model a wide variety of devices and experimental structures. Here we present such an experimental structure that can be used to characterize the...

    https://nanohub.org/resources/21659

  20. Non-Local RSO Datta-Das Spin Transistor

    26 Oct 2014 | Downloads | Contributor(s): Kerem Yunus Camsari, Samiran Ganguly

    Spin-orbit coupling phenomena in semiconductor materials constitute an important avenue for spintronics. The  "Rashba Effect" that   is commonly observed in III­‐V...

    https://nanohub.org/resources/21657

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