Is it feasible to model a 2D-channel FET (i.e., TMD or BP) as a HEMT?
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I'm working on compact models for 2D-channel FETs and I noticed there is a lot of similarities between them and HEMTs. There is something similar to a 2DEG in the 2D-channel FET and the...
17 Apr 2020 | Compact Models | Contributor(s):
By Colin McAndrew
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Neal Graham Wood
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14 Aug 2019 | Compact Models | Contributor(s):
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1. École Polytechnique Fédérale de Lausanne,(EPFL) 2. Amirkabir University of Tehnology 3. Technical University of Crete
The EPFL HEMT Model is a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and the...
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22 May 2019 | Compact Models | Contributor(s):
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Università di Modena e Reggio Emilia
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Peking University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model
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The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.
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1. CNRS (Centre National de la Recherche Scientifique) 2. CNRS
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04 May 2017 | Compact Models | Contributor(s):
By Xingshu Sun1, Raghu Vamsi Krishna Chavali1, Sourabh Dongaonkar1, Suhas Venkat Baddela1, Mark Lundstrom1, Muhammad Ashraful Alam2
1. Purdue University 2. Lucent Technologies
Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This...
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By Jorge-Daniel Aguirre Morales1, Sébastien Frégonèse2, Chhandak Mukherjee3, Cristell Maneux3, Thomas Zimmer3
1. CNRS, University of Bordeaux, IMS Laboratory 2. CNRS, IMS Laboratory 3. University of Bordeaux, IMS Laboratory
A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.
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This presentation is part of the 8th IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) 2015. It provides an introduction to Berkeley Model and Algorithm Prototyping Platform (MAPP). MAPP is a MATLAB-based platform that provides a complete environment for developing, testing,...
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Massachusetts Institute of Technology (MIT)
The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
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The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical...