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SPICE Subcircuit Generator for Ferromagnetic Nanomaterials
05 Feb 2018 | Contributor(s):: Onur Dincer, Azad Naeemi
Generates SPICE subcircuit netlist for ferromagnetic nanometarials for spintronic devices
CNRS - Carbon Nanotube Interconnect RC Model
06 Oct 2017 | Compact Models | Contributor(s):
By Jie LIANG, Aida Todri1
A carbon nanotube interconnect compact model is developed with fundamental physics understanding and electrical modeling. Single Wall Carbon Nanotube (SWCNT) RC electrical model takes into...
I want to make a compact model for FinFET with Verilog-A to use it in HSpice, but I'm really new in this subject and don't know where to start. Can anyone help me with some documents in this subject?
Closed | Responses: 0
18 Feb 2016 | | Contributor(s):: Jason Clark, Quincy Clark
CAD for MEMS via systems of compact models. This commercial tool is published by Sugarcube Systems, which requires a registration fee to use. The nanoHUB does not receive revenue or assume liability for the use of this tool.
Double-Clamped Silicon NEMS Resonators Model
22 Feb 2016 | Compact Models | Contributor(s):
By Yanfei Shen1, Scott Calvert1, Jeffrey F. Rhoads1, Saeed Mohammadi1
Micro/Nanoelectromechanical systems (M/NEMS) are gaining great momentum and interest in a variety ofapplications, such as high-sensitivity mass sensing, tunable signal filtering and precision...
MAPP: The Berkeley Model and Algorithm Prototyping Platform
11 Jan 2016 | | Contributor(s):: Tianshi Wang, Aadithya V Karthik, Jaijeet Roychowdhury
This presentation is part of the 8th IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) 2015. It provides an introduction to Berkeley Model and Algorithm Prototyping Platform (MAPP). MAPP is a MATLAB-based platform that provides a complete environment for developing, testing,...
MVS Nanotransistor Model (Silicon)
02 Dec 2015 | Compact Models | Contributor(s):
By Shaloo Rakheja1, Dimitri Antoniadis1
Massachusetts Institute of Technology (MIT)
The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
MVS III-V HEMT model
01 Dec 2015 | Compact Models | Contributor(s):
The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical...
MVS Nanotransistor Model
CCAM Compact Carbon Nanotube Field-Effect Transistor Model
06 Oct 2015 | Compact Models | Contributor(s):
By Michael Schroter1, Max Haferlach2, Martin Claus2
1. UCSD 2. Technische Universität Dresden
CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.
VALint: the NEEDS Verilog-A Checker (BETA)
21 Jan 2015 | | Contributor(s):: Xufeng Wang, Geoffrey Coram, Colin McAndrew
Verilog-A lint and pretty printer created by NEEDS
A physics-based compact model for thermoelectric devices
03 Sep 2015 | | Contributor(s):: Kyle Conrad
Thermoelectric devices have a wide variety of potential applications including as coolers, temperature regulators, power generators, and energy harvesters. During the past decade or so, new thermoelectric materials have been an active area of research. As a result, several new high figure of...
Thermoelectric Device Compact Model
01 Sep 2015 | Compact Models | Contributor(s):
By Xufeng Wang1, Kyle Conrad1, Jesse Maassen1, Mark Lundstrom1
The NEEDS thermoelectric compact model describes a homogeneous segment of thermoelectric material and serves as a basic building block for complex electrothermal system.
MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model
29 Aug 2015 | Compact Models | Contributor(s):
By Ujwal Radhakrishna1, Dimitri Antoniadis2
1. Massachusetts Institute of Technology (MIT) 2. Massachusetts Institute of Technology
MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) model is a charge based physical model for HV-GaN HEMTs suitable for power switching applications.
Compact model for Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction
03 Jul 2015 | Compact Models | Contributor(s):
By You WANG1, Yue ZHANG2, Jacques-Olivier Klein3, Thibaut Devolder3, Dafiné Ravelosona3, Claude Chappert3, Weisheng Zhao2
1. Institut Mines-Téléecom, Télécom-ParisTech, LTCI-CNRS-UMR 5141, Paris CEDEX 13, 75634, France 2. Spintronics Interdisciplinary Center, Beihang University, Beijing 100191, China 3. Institut d’Electronique Fondamentale, CNRS UMR 8622, University of Paris-Sud 11, 91405 Orsay, France
This STT PMA MTJ model integrates the physical models of static, dynamic behaviors and reliability issues, which can be used to perform more accurate and complex reliability analysis of complex...
Verilog-A implementation of the compact model for organic thin-film transistors oTFT
14 Jun 2015 | Compact Models | Contributor(s):
By Ognian Marinov
McMaster University, Hamilton, ON, Canada
Compact model oTFT supports mobility bias enhancement, contact effects, channel modulation and leakage in organic thin-film transistors. Version 2.04.01 “mirrors” TFT in all regimes of operation...
Berkeley VCSEL Compact Model
28 May 2015 | Compact Models | Contributor(s):
By Adair Gerke1, Connie J. Chang-Hasnain1
University of California, Berkeley
The U.C. Berkeley Vertical Cavity Surface Emitting Laser (VCSEL) Compact Model provides a circuit simulator compatible Verilog-A model of VCSEL lasers, primarily for use in designing...
III-V Tunnel FET Model
20 Apr 2015 | Compact Models | Contributor(s):
By Huichu Liu1, Vinay Saripalli1, Vijaykrishnan Narayanan1, Suman Datta1
Penn State University
The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.
Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model
08 Apr 2015 | Compact Models | Contributor(s):
By Chi-Shuen Lee1, H.-S. Philip Wong1
The VSCNFET model captures the dimensional scaling properties and includes parasitic resistance, capacitance, and tunneling leakage currents. The model aims for CNFET technology assessment for the...
UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model
25 Mar 2015 | Compact Models | Contributor(s):
By Wei Cao1, Kaustav Banerjee1
University of California Santa Barbara
a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions