Tags: Compact Model

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  1. Is it feasible to model a 2D-channel FET (i.e., TMD or BP) as a HEMT?

    Closed | Responses: 0

    I'm working on compact models for 2D-channel FETs and I noticed there is a lot of similarities between them and HEMTs. There is something similar to a 2DEG in the 2D-channel FET and the...

    https://nanohub.org/answers/question/2320

  2. PSPHV LDMOS

    17 Apr 2020 | Compact Models | Contributor(s):

    By Colin McAndrew

    Freescale Semiconductor

    PSPHV consists of an enhanced PSP103.6 model for thecore MOS transistor, an updated JFETIDG model for thedrift region, JUNCAP2 for the pn-junction diodes,and two 3-terminal MOS capacitors based on...

    https://nanohub.org/publications/347/?v=1

  3. Neal Graham Wood

    https://nanohub.org/members/278715

  4. EPFL HEMT MODEL

    14 Aug 2019 | Compact Models | Contributor(s):

    By Farzan Jazaeri1, jean-michel sallese, Majid Shalchian2, Matthias Bucher, Nikolaos Makris3

    1. École Polytechnique Fédérale de Lausanne,(EPFL) 2. Amirkabir University of Tehnology 3. Technical University of Crete

    The EPFL HEMT Model is a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and the...

    https://nanohub.org/publications/301/?v=1

  5. Unimore Resistive Random Access Memory (RRAM) Verilog-A Model

    22 May 2019 | Compact Models | Contributor(s):

    By Francesco Maria Puglisi1, Tommaso Zanotti1, Paolo Pavan1

    Università di Modena e Reggio Emilia

    The Unimore RRAM Verilog-A model is a physics-based compact model of bipolar RRAM which includes cycle-to-cycle variability, thermal effects, self-heating, and multilevel Random Telegraph Noise (RTN).

    https://nanohub.org/publications/289/?v=1

  6. Peking University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model

    27 Mar 2019 | Compact Models | Contributor(s):

    By Weijie Xu1, Jinfeng Kang1

    Peking University

    The Peking University RRAM Model is a SPICE-compatible compact model which is designed for simulation of metal-oxide based RRAM devices. It captures typical DC and AC electrical behaviors of the...

    https://nanohub.org/publications/284/?v=1

  7. Stanford 2D Semiconductor (S2DS) Transistor Model

    11 Aug 2018 | Compact Models | Contributor(s):

    By Saurabh Vinayak Suryavanshi1, Eric Pop1

    Stanford University

    The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

    https://nanohub.org/publications/18/?v=3

  8. SPICE Subcircuit Generator for Ferromagnetic Nanomaterials

    05 Feb 2018 | Contributor(s):: Onur Dincer, Azad Naeemi

    Generates SPICE subcircuit netlist for ferromagnetic nanometarials for spintronic devices

  9. CNRS - Carbon Nanotube Interconnect RC Model

    06 Oct 2017 | Compact Models | Contributor(s):

    By Jie LIANG1, Aida Todri2

    1. CNRS (Centre National de la Recherche Scientifique) 2. CNRS

    This CNT Interconnect Compact Model includes a solid physics understanding and electrical modeling for pristine and doped SWCNT as Interconnect applications. SWCNT resistance and capacitance are...

    https://nanohub.org/publications/200/?v=1

  10. I want to make a compact model for FinFET with Verilog-A to use it in HSpice, but I'm really new in this subject and don't know where to start. Can anyone help me with some documents in this subject?

    Closed | Responses: 0

    https://nanohub.org/answers/question/1942

  11. Purdue Solar Cell Model (PSM) - Perovskite/a-Si (p-i-n)

    04 May 2017 | Compact Models | Contributor(s):

    By Xingshu Sun1, Raghu Vamsi Krishna Chavali1, Sourabh Dongaonkar1, Suhas Venkat Baddela1, Mark Lundstrom1, Muhammad Ashraful Alam2

    1. Purdue University 2. Lucent Technologies

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This...

    https://nanohub.org/publications/186/?v=1

  12. Purdue Solar Cell Model (PSM) - HIT

    04 May 2017 | Compact Models | Contributor(s):

    By Xingshu Sun1, Raghu Vamsi Krishna Chavali1, Sourabh Dongaonkar1, Suhas Venkat Baddela1, Mark Lundstrom1, Muhammad Ashraful Alam2

    1. Purdue University 2. Lucent Technologies

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This...

    https://nanohub.org/publications/185/?v=1

  13. Purdue Solar Cell Model (PSM) - Si

    04 May 2017 | Compact Models | Contributor(s):

    By Mark Lundstrom1, Muhammad Ashraful Alam2, Raghu Vamsi Krishna Chavali1, Sourabh Dongaonkar1, Suhas Venkat Baddela1, Xingshu Sun1

    1. Purdue University 2. Lucent Technologies

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This...

    https://nanohub.org/publications/184/?v=1

  14. Purdue Solar Cell Model (PSM) - CIGS/CdTe

    04 May 2017 | Compact Models | Contributor(s):

    By Xingshu Sun1, Sourabh Dongaonkar1, Raghu Vamsi Krishna Chavali1, Suhas Venkat Baddela1, Mark Lundstrom1, Muhammad Ashraful Alam2

    1. Purdue University 2. Lucent Technologies

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This...

    https://nanohub.org/publications/183/?v=1

  15. sugarcube-cad

    18 Feb 2016 | | Contributor(s):: Jason Clark, Quincy Clark

    CAD for MEMS via systems of compact models. This commercial tool is published by Sugarcube Systems, which requires a registration fee to use. The nanoHUB does not receive revenue or assume liability for the use of this tool.

  16. Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

    06 Apr 2016 | Compact Models | Contributor(s):

    By Jorge-Daniel Aguirre Morales1, Sébastien Frégonèse2, Chhandak Mukherjee3, Cristell Maneux3, Thomas Zimmer3

    1. CNRS, University of Bordeaux, IMS Laboratory 2. CNRS, IMS Laboratory 3. University of Bordeaux, IMS Laboratory

    A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.

    https://nanohub.org/publications/133/?v=1

  17. Stanford 2D Semiconductor (S2DS) Transistor Model

    04 Apr 2016 | Compact Models | Contributor(s):

    By Saurabh Vinayak Suryavanshi1, Eric Pop1

    Stanford University

    The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

    https://nanohub.org/publications/18/?v=2

  18. MAPP: The Berkeley Model and Algorithm Prototyping Platform

    11 Jan 2016 | | Contributor(s):: Tianshi Wang, Aadithya V Karthik, Jaijeet Roychowdhury

    This presentation is part of the 8th IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) 2015. It provides an introduction to Berkeley Model and Algorithm Prototyping Platform (MAPP). MAPP is a MATLAB-based platform that provides a complete environment for developing, testing,...

  19. MVS Nanotransistor Model (Silicon)

    02 Dec 2015 | Compact Models | Contributor(s):

    By Shaloo Rakheja1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

    https://nanohub.org/publications/15/?v=4

  20. MVS III-V HEMT model

    01 Dec 2015 | Compact Models | Contributor(s):

    By Shaloo Rakheja1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical...

    https://nanohub.org/publications/71/?v=1