By Gang Li1, yang xu1, Narayan Aluru1
1. University of Illinois at Urbana-Champaign
Compute the charge density distribution and potential variation inside a MOS structure by using a coarse-grained tight binding model
You must login before you can run this tool.
Version 1.0a - published on 26 Feb 2015
doi:10.4231/D3GX44V81 cite this
This tool is closed source.
View All Supporting Documents
Location of all "CGTB" Users Since Its Posting