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CGTB

By yang xu1, Narayan Aluru1

1. University of Illinois at Urbana-Champaign

Compute the charge density distribution and potential variation inside a MOS structure

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Version 1 - published on 15 May 2006

doi:10.4231/D3N29P61K cite this

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Abstract

CGTB is an interactive tool for computing the charge density distribution and potential variation inside a MOS structure. A full tight binding description of the silicon atoms is coarse-grained to a 1-D tight binding description by using the periodicity of the electronic properties in the planes parallel to the dielectric layer. In the CGTB rapture tool, the user can specify the applied potential on the metal layer and the gap of between the silicon structure and the metal layer (i.e., the thickness of the dielectric layer). The charge density and potential profiles in the MOS structure are computed and plotted.

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This work was supported by the National Science Foundation.

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Researchers should cite this work as follows:

  • yang xu; Narayan Aluru (2006), "CGTB," https://nanohub.org/resources/cgtb. (DOI: 10.4231/D3N29P61K).

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