By Neerav Kharche1, Mathieu Luisier1, George A. Howlett1, Gerhard Klimeck1, Mehdi Salmani Jelodar1
1. Purdue University
Simulates High Electron Mobility Transistor (HEMT), single-gate MOSFET, and double-gate MOSFET in effective mass approximation
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Version 1.2.2 - published on 25 Mar 2016
doi:10.4231/D3BR8MH4Z cite this
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