We have developed a self-consistent atomistic simulator for CNTFETs.
Using the simulator, we show that a recently reported high-performance
CNTFET delivers a near ballistic on-current. The off-state, however, is
significantly degraded because the CNTFET operates like a
non-conventional Schottky barrier transistor. Design optimization for
significantly improving the off-state is explored. We have also assessed
how the CNTFET compares to the state-of-the-art Si MOSFET and the
potential of CNTFETs for high-frequency applications.
Researchers should cite this work as follows: