On June 30, 1948, AT&T Bell Labs unveiled the transitor to the world, creating a spark of explosive economic growth that would lead into the Information Age. William Shockley led a team of researchers, including Walter Brattain and John Bardeen, who invented the device. Like the existing triode vacuum tube device, the transistor could amplify signals and switch currents on and off, but the transistor was smaller, cheaper, and more efficient. Moreover, it could be integrated with millions of other transistors onto a single chip, creating the integrated circuit at the heart of modern computers.
Today, most transistors are being manufactured with a minimum feature size of 60-90nm--roughly 200-300 atoms. As the push continues to make devices even smaller, researchers must account for quantum mechanical effects in the device behavior. With fewer and fewer atoms, the positions of impurities and other irregularities begin to matter, and device reliability becomes an issue. So rather than shrink existing devices, many researchers are working on entirely new devices, based on carbon nanotubes, spintronics,
molecular conduction, and other nanotechnologies.
Learn more about transistors from the many resources on this site, listed below. Use our simulation tools to simulate performance characteristics for your own devices.
09 Demonstration of Vertical GaN PN Diode with Step-etched Triple zone JTE
14 Oct 2020 | | Contributor(s):: Hyun-Soo Lee, Yuxuan Zhang, Zhaoying Chen, Mohammad Wahidur Rahman, Hongping Zhao, Siddharth Rajan
We have demonstrated significantly improved BV of vertical GaN PN diode with STJTE without any degradation of forward characteristics. This is the first demonstration of a step-etched multiple zone edge termination for III-Nitride technology.
DRC202 Device Research Conference Technical Presentations
14 Oct 2020 | | Contributor(s):: Siddharth Rajan (editor), Zhihong Chen (editor), Becky (R. L.) Peterson
For over seven decades, the Device Research Conference (DRC) has brought together leading scientists, researchers and students to share their latest discoveries in device science, technology and modeling. Notably, many of the first public disclosures of key device technologies were made at the...
39 Thermal Engineering of Volatile Switching in PrMnO3 RRAM: Non-Linearity in DC IV Characteristics and Transient Switching Speed
21 Sep 2020 | | Contributor(s):: Jayatika Sakhuja, Sandip Lashkare, Vivek Saraswat, Udayan Ganguly
This study is the first-time analysis of heating and cooling timescales together demonstrating voltage as well as frequency scaling for different voltage regimes w.r.t. different device stacks. Thus, an electro-thermal speed engineering study is critical for RRAM devices to model elements of...
A3 Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics
18 Sep 2020 | | Contributor(s):: Yury Yuryevich Illarionov, A.G. Banshchikov, Theresia Knobloch, D.K. Polyushkin, S. Wachter, V.V. Fedorov, M. Stöger-Pollach, M.I. Vexler, N.S. Sokolov, T. Grasser
We fabricated high-quality crystalline 1−2nm CaF2 films and successfully used them for MoS2 FETs with record-thin gate insulators. For the first time we demonstrated MoS2 FETs with simultaneously sub-1nm EOT insulators and sub-100nm channel length and found that these devices can exhibit...
Probabilistic Computing: From Materials and Devices to Circuits and Systems
07 Sep 2020 | | Contributor(s):: Kerem Yunus Camsari
In this talk, I will describe one such path based on the concept of probabilistic or p-bits that can be scalably built with present-day technology used in magnetic memory devices.
Dr. Ali Imran
Introduction to Electronics
17 Apr 2020 | | Contributor(s):: Center for E3S, Aaron Ragsdale
Aaron Ragsdale, a former Master's student and researcher at Stanford University, leads an introductory course on common components, devices and elementary design techniques. This course consists of four modules: 1: Fundamental Variables & Electrical Components 2: Circuit...
Soft Electronic and Microfluidic Systems for the Skin
23 May 2019 | | Contributor(s):: John A. Rogers
This talk describes the key ideas, and presents some of the most recent device examples, including wireless, skin-like electronic 'tattoos' for continuous monitoring of vital signs in neonatal intensive care, microfluidic/electronic platforms that can capture, store and perform...
Bandstructure Effects in Nano Devices With NEMO: from Basic Physics to Real Devices and to Global Impact on nanoHUB.org
08 Mar 2019 | | Contributor(s):: Gerhard Klimeck
This presentation will intuitively describe how bandstructure is modified at the nanometer scale and what some of the consequences are on the device performance.
Organic Photonics and Electronics: The Endless Frontier
21 Feb 2019 | | Contributor(s):: Bernard Kippelen
In this talk, we will discuss how printable organic conjugated semiconducting molecules and polymers are creating new disruptive technologies that are impacting all industries. We will present recent advances in various solid-state device platforms including, organic light-emitting diodes...
[Illinois] Nano-scale Electronic and Optoelectronic Devices Based on Two-dimensional Materials
13 Apr 2017 | | Contributor(s):: Wenjuan Zhu
9/8/2016 MNTL Industry Affiliates Program
[Illinois] New directions in III-V MBE: from materials to devices
13 Apr 2017 | | Contributor(s):: Minjoo Larry Lee
[Illinois] Piezoelectric MEMS Devices for Future RF Front Ends
13 Apr 2017 | | Contributor(s):: Songbin Gong
Carlos Rodolfo B. Lopes Souza
Tissue-Level Communication Through Patterning Of Intercellular Ca2+ Wave Dynamics
22 Nov 2016 | | Contributor(s):: Jeremiah J. Zartman
Here we characterize periodic intercellular Ca2+ waves (ICWs) in a model organ system of epithelial growth and patterning—the Drosophila wing imaginal disc. We developed a novel regulated environment for micro-organs (REM-Chip) device that enable a broad range of genetic, chemical and...
NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool
: From Basic Physics to Real Devices and to Global Impact on nanoHUB.org
10 Nov 2016 | | Contributor(s):: Gerhard Klimeck
The Nanoelectronic Modeling tool suite NEMO5 is aimed to comprehend the critical multi-scale, multi-physics phenomena and deliver results to engineers, scientists, and students through efficient computational approaches. NEMO5’s general software framework easily includes any kind of...
NEMO5 and 2D Materials: Tuning Bandstructures, Wave Functions and Electrostatic Screening
19 Oct 2016 | | Contributor(s):: Tillmann Christoph Kubis
In this talk, I will briefly discuss the MLWF approach and compare it to DFT and atomistic tight binding. Initial results using the MLWF approach for 2D material based devices will be discussed and compared to experiments. These results unveil systematic band structure changes as functions of the...
Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance
22 Sep 2016 | | Contributor(s):: Jamie Teherani
Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society’s best hope for achieving a > 10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly...