Tags: devices


On June 30, 1948, AT&T Bell Labs unveiled the transitor to the world, creating a spark of explosive economic growth that would lead into the Information Age. William Shockley led a team of researchers, including Walter Brattain and John Bardeen, who invented the device. Like the existing triode vacuum tube device, the transistor could amplify signals and switch currents on and off, but the transistor was smaller, cheaper, and more efficient. Moreover, it could be integrated with millions of other transistors onto a single chip, creating the integrated circuit at the heart of modern computers.

Today, most transistors are being manufactured with a minimum feature size of 60-90nm--roughly 200-300 atoms. As the push continues to make devices even smaller, researchers must account for quantum mechanical effects in the device behavior. With fewer and fewer atoms, the positions of impurities and other irregularities begin to matter, and device reliability becomes an issue. So rather than shrink existing devices, many researchers are working on entirely new devices, based on carbon nanotubes, spintronics, molecular conduction, and other nanotechnologies.

Learn more about transistors from the many resources on this site, listed below. Use our simulation tools to simulate performance characteristics for your own devices.

All Categories (1-20 of 359)

  1. CMOS+X: Integrated Ferroelectric Devices for Energy Efficient Electronics

    09 Dec 2022 | | Contributor(s):: Sayeef Salahuddin

    In this talk, I shall briefly present how integrated ferroelectric devices offer a new pathway in this context. First, I shall discuss the phenomenon of negative capacitance in ferroelectric materials. A fundamentally new state in the ferroelectrics, negative capacitance promises to reduce...

  2. Near-Equilibrium Transport Fundamentals and Applications

    30 Jan 2022 | | Contributor(s):: Mark Lundstrom, Changwook Jeong

    These lectures are designed to introduce students to the fundamentals of carrier transport in nano-devices using a novel, “bottom up approach” that agrees with traditional methods when devices are large, but which also works for nano-devices.

  3. Daniel Lopez

    Daniel López is the Liang Professor of Electrical Engineering and the Director of the Nanofabrication Laboratory at the Materials Research Institute at Penn State University. Dr. López received his...


  4. My ORKG Comparisons in Nanotechnology and Engineering

    Collections | 23 Dec 2021 | Posted by Mariana Amorim Fraga


  5. Thin Film Technology Applied to the Development of Microelectronic, Photovoltaic and Sensor Devices

    Collections | 23 Dec 2021 | Posted by Mariana Amorim Fraga


  6. Recitation Series for Semiconductor Education

    08 Dec 2021 | | Contributor(s):: Gerhard Klimeck

    The objective of this recitation series is to enable faculty to enhance existing or new semiconductor classes with interactive simulations. Simulations and animations can immerse students into “what if” scenarios and engage them in more active forms of learning, including...

  7. IWCN 2021: Multiscale Modeling and Simulation of Advanced Photovoltaic Devices

    14 Jul 2021 | | Contributor(s):: Yongjie Zou, Reza Vatan Meidanshahi, Raghuraj Hathwar, Stephen M. Goodnick

    The introduction of new materials, device concepts and nanotechnology-based solutions to achieve high efficiency and low cost in photovoltaic (PV) devices requires modeling and simulation well beyond the current state of the art. New materials and heterojunction interfaces require atomistic...

  8. Perfect Ripeness Every Time: Design of Continuous Fruit Monitoring Technology

    03 Dec 2020 | | Contributor(s):: Aiganym Yermembetova, Benjamin Washer

    This presentation is part of the 2020 Birck Shark Tank Competition.

  9. Spintronics Functionalities of Topological Semimetals

    13 Nov 2020 |

    In this presentation, we theoretically study the spin-transfer torque effect and dynamics of magnetic textures in magnetic Weyl semimetals [3-6].

  10. 09 Demonstration of Vertical GaN PN Diode with Step-etched Triple zone JTE

    14 Oct 2020 | | Contributor(s):: Hyun-Soo Lee, Yuxuan Zhang, Zhaoying Chen, Mohammad Wahidur Rahman, Hongping Zhao, Siddharth Rajan

    We have demonstrated significantly improved BV of vertical GaN PN diode with STJTE without any degradation of forward characteristics. This is the first demonstration of a step-etched multiple zone edge termination for III-Nitride technology.

  11. DRC202 Device Research Conference Technical Presentations

    14 Oct 2020 | | Contributor(s):: Siddharth Rajan (editor), Zhihong Chen (editor), Becky (R. L.) Peterson

    For over seven decades, the Device Research Conference (DRC) has brought together leading scientists, researchers and students to share their latest discoveries in device science, technology and modeling. Notably, many of the first public disclosures of key device technologies were made at the...

  12. 39 Thermal Engineering of Volatile Switching in PrMnO3 RRAM: Non-Linearity in DC IV Characteristics and Transient Switching Speed

    21 Sep 2020 | | Contributor(s):: Jayatika Sakhuja, Sandip Lashkare, Vivek Saraswat, Udayan Ganguly

    This study is the first-time analysis of heating and cooling timescales together demonstrating voltage as well as frequency scaling for different voltage regimes w.r.t. different device stacks. Thus, an electro-thermal speed engineering study is critical for RRAM devices to model elements of...

  13. A3 Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics

    18 Sep 2020 | | Contributor(s):: Yury Yuryevich Illarionov, A.G. Banshchikov, Theresia Knobloch, D.K. Polyushkin, S. Wachter, V.V. Fedorov, M. Stöger-Pollach, M.I. Vexler, N.S. Sokolov, T. Grasser

    We fabricated high-quality crystalline 1−2nm CaF2 films and successfully used them for MoS2 FETs with record-thin gate insulators. For the first time we demonstrated MoS2 FETs with simultaneously sub-1nm EOT insulators and sub-100nm channel length and found that these devices can exhibit...

  14. Probabilistic Computing: From Materials and Devices to Circuits and Systems

    07 Sep 2020 | | Contributor(s):: Kerem Yunus Camsari

    In this talk, I will describe one such path based on the concept of probabilistic or p-bits that can be scalably built with present-day technology used in magnetic memory devices.

  15. Dr. Ali Imran


  16. Introduction to Electronics

    17 Apr 2020 | | Contributor(s):: Center for E3S, Aaron Ragsdale

    Aaron Ragsdale, a former Master's student and researcher at Stanford University, leads an introductory course on common components, devices and elementary design techniques. This course consists of four modules: 1: Fundamental Variables & Electrical Components 2: Circuit...

  17. Soft Electronic and Microfluidic Systems for the Skin

    23 May 2019 | | Contributor(s):: John A. Rogers

    This talk describes the key ideas, and presents some of the most recent device examples, including wireless, skin-like electronic 'tattoos' for continuous monitoring of vital signs in neonatal intensive care, microfluidic/electronic platforms that can capture, store and perform...

  18. Bandstructure Effects in Nano Devices With NEMO: from Basic Physics to Real Devices and to Global Impact on nanoHUB.org

    08 Mar 2019 | | Contributor(s):: Gerhard Klimeck

    This presentation will intuitively describe how bandstructure is modified at the nanometer scale and what some of the consequences are on the device performance.

  19. Organic Photonics and Electronics: The Endless Frontier

    21 Feb 2019 | | Contributor(s):: Bernard Kippelen

    In this talk, we will discuss how printable organic conjugated semiconducting molecules and polymers are creating new disruptive technologies that are impacting all industries. We will present recent advances in various solid-state device platforms including, organic light-emitting diodes...

  20. Zach Scott

    I'm an undergrad at Texas A&M almost done with a EE degree!