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Illinois Tools: MOCA
A 2D Full-band Monte Carlo (MOCA) Simulation of SOI Device Structures
Citations Non-affiliated (2) | Affiliated (1)
Non-affiliated authors
- Poppy Siddiqua, Stephen O?Leary, (2018), "Electron Transport Within The Wurtzite And Zinc-blende Phases Of Gallium Nitride And Indium Nitride", Journal Of Materials Science: Materials In Electronics, Springer, 29: pg: 3511-3567, (DOI: 10.1007/s10854-017-8324-1)
- Walid Hadi, Michael Shur, Stephen O?Leary, (2014), "Steady-state And Transient Electron Transport Within The Wide Energy Gap Compound Semiconductors Gallium Nitride And Zinc Oxide: An Updated And Critical Review", Journal Of Materials Science: Materials In Electronics, Springer, 25: pg: 4675-4713, (DOI: 10.1007/s10854-014-2226-2)
Affiliated authors
- R. Ravishankar, G. Kathawala, U. Ravaioli, S. Hasan, Mark Lundstrom, (2005), "Comparison of Monte Carlo and NEGF simulations of double gate MOSFETs", Journal of Computational Electronics, Springer, 4, 1: pg: 39-43, 04, (DOI: 10.1007/s10825-005-7104-y)