Illinois Tools: MOCA

By Mohamed Mohamed1; Umberto Ravaioli1; Nahil Sobh1; derrick kearney2; Kyeong-hyun Park

1. University of Illinois at Urbana-Champaign 2. Purdue University

2D Full-band Monte Carlo (MOCA) Simulation for NFET SOI-Based Device Structures

Launch Tool

You must login before you can run this tool.

Version 1.2.1 - published on 15 Oct 2024

doi:10.21981/MY9M-8D94 cite this

This tool is closed source.

View All Supporting Documents

Category

Tools

Published on

Abstract

MOCA is a full-band Monte Carlo Simulator code developed at the University of Illinois. This version is suitable for 2D simulation of silicon devices. Quantum correction approach to account for size quantization in narrow channels has been adopted.

Credits

Computational Electronics Group, University of Illinois at Urbana-Champaign. This work was funded by NSF.

References

  • Monte Carlo Device Simulation: Full Band and Beyond by Karl Hess, Kluwer Academic Publishers, 1991.

Cite this work

Researchers should cite this work as follows:

  • G. Kathawala, B. Winstead, and U. Ravaioli, ''Monte Carlo simulations of double-gate MOSFETs'', IEEE Transactions on Electron Devices, vol. 50, issue 12, pp. 2467-2473 (2003).

    Mohamed, Mohamed, et al. "A conjoined electron and thermal transport study of thermal degradation induced during normal operation of multigate transistors." IEEE Transactions on Electron Devices 61.4 (2014): 976-983.

  • Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney, Kyeong-hyun Park (2024), "Illinois Tools: MOCA," https://nanohub.org/resources/moca. (DOI: 10.21981/MY9M-8D94).

    BibTex | EndNote

Tags

  1. educational tool
  2. microelectronics
  3. Monte Carlo
  4. MOS
  5. MOS capacitors
  6. MOSFET
  7. nanoelectronics
  8. quantum
  9. SOI devices
  10. transport/Boltzmann