You must login before you can run this tool.
Citations Non-affiliated (104) | Affiliated (37)
Non-affiliated authors
- Kerim Yilmaz, Benjamin I{~n}iguez, F. Lime, A. Kloes, (2022), "Cryogenic Temperature And Doping Analysis Of Source-to-Drain Tunneling Current In Ultrashort-Channel Nanosheet MOSFETs", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE, 69, 69: pg: -, (DOI: 10.1109/TED.2022.3145339)
- Kerim Yilmaz, F. Lime, A. Kloes, Benjamin Iniguez, (2021), "Quasi-Compact Model Of Direct Source-to-Drain Tunneling Current In Ultrashort-Channel Nanosheet MOSFETs By Wavelet Transform", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE, 69, 1: pg: 17-24, (DOI: 10.1109/TED.2021.3129718)
- SulaimanMuhammad Gana, GSM Galadanci, TH Darma, AS Gidado, Abdulrazak Tijjani, (2021), "Effect Of Temperature On The Quasi Ballistic Transport Of A Double Gate Nano-MOSFET", NIPES Journal of Science and Technology Research, 3, 2: pg: 1-10, 10 pISSN-2682-5821, eISSN-2682-5821, (DOI: 10.37933/nipes/3.2.2021.1)
- A. Kloes, (2021), "Multiscale Simulation: Can Compact Models Be More Than A One-Way Bridge Between TCAD And Circuit Simulation?", 2021 IEEE Latin America Electron Devices Conference \LAEDC), 2021 IEEE Latin America Electron Devices Conference \LAEDC), : pg: 1-4, IEEE, (DOI: doi: 10.1109/LAEDC51812.2021.9437941.)
- Atieh Farokhnejad, Francisco Criado, A. Kloes, Kerim Yilmaz, Benjamin Iniguez, F. Lime, (2020), "Direct Source-to-Drain Tunneling Current In Ultra-Short Channel DG MOSFETs By Wavelet Transform", 2020 IEEE Latin America Electron Devices Conference , 2020 IEEE Latin America Electron Devices Conference \LAEDC), : pg: -, IEEE, (DOI: 10.1109/LAEDC49063.2020.9072953)
- Mu Chuan, Kien Wong, Afiq Hamzah, Shahrizal Rusli, Nurul Alias, Cheng Lim, M Tan, (2020), "A Review Of The Top Of The Barrier Nanotransistor Models For Semiconductor Nanomaterials", Superlattices And Microstructures, Elsevier, 140: pg: -, (DOI: https://doi.org/10.1016/j.spmi.2020.106429)
- Yanxin Li, Shuyu Mei, Sumin Liu, Xu Hun, (2018), "A Photoelectrochemical Sensing Strategy Based On Single-layer MoS2 Modified Electrode For Methionine Detection", Journal of Pharmaceutical and Biomedical Analysis, 165: pg: 94-100, (DOI: 10.1016/j.jpba.2018.11.059)
- Fei Liu, Chenguang Qiu, Zhiyong Zhang, Lian-Mao Peng, Jian Wang, Hong Guo, (2018), "Dirac Electrons At The Source: Breaking The 60-mV/Decade Switching Limit", IEEE Transactions on Electron Devices, 65, 7: pg: 2736-2743, (DOI: 10.1109/TED.2018.2836387)
- Yunlei Zhou, Chengji Sui, Huanshun Yin, Yue Wang, Minghui Wang, Shiyun Ai, (2018), "Tungsten Disulfide \WS 2) Nanosheet-based Photoelectrochemical Aptasensing Of Chloramphenicol", Microchimica Acta, Springer, 185, 10: pg: 1-453, (DOI: 10.1007/s00604-018-2970-8)
- Khalil Tamersit, Fayçal Djeffal, (2018), "Boosting the performance of a nanoscale graphene nanoribbon field-effect transistor using graded gate engineering", Journal Of Computational Electronics, Springer: pg: 1-9, (DOI: 10.1007/s10825-018-1209-6)
- Zahra Ahangari, (2018), "Novel Attributes Of Bandstructure Effect On The Performance Of Germanium Schottky Barrier MOSFET", Physica Scripta, IOP Publishing, 93, 7: pg: 1-75801
- Xu Hun, Yanxin Li, Shiyu Wang, Yao Li, Jikuan Zhao, Hui Zhang, Xiliang Luo, (2018), "Photoelectrochemical Platform For Cancer Cell Glutathione Detection Based On Polyaniline And NanoMoS2 Composites Modified Gold Electrode", Biosensors And Bioelectronics, Elsevier, 112: pg: 93-99, (DOI: 10.1016/j.bios.2018.04.031)
- Zhiqing Yang, Yi Wang, Dun Zhang, (2018), "A Novel Signal-on Photoelectrochemical Sensing Platform Based On Biosynthesis Of CdS Quantum Dots Sensitizing ZnO Nanorod Arrays", Sensors And Actuators B: Chemical, Elsevier: pg: 1-26, (DOI: 10.1016/j.snb.2018.01.190)
- Hongxiu Dai, Duo Chen, Yuan Li, Pengfei Cao, Nan Wang, Meng Lin, (2018), "Voltammetric Sensing Of Dopamine Based On A Nanoneedle Array Consisting Of NiCo2S4 Hollow Core-shells On A Nickel Foam", Microchimica Acta, Springer, 185, 3: pg: 1-157, (DOI: 10.1007/s00604-018-2718-5)
- Xueping Wang, Picheng Gao, Tao Yang, Rongxia Li, Rui Xu, Yong Zhang, Bin Du, Qin Wei, (2018), "Ultrasensitive Photoelectrochemical Immunosensor For Insulin Detection Based On Dual Inhibition Effect Of CuS-SiO 2 Composite On CdS Sensitized C-TiO 2", Sensrs and Acuators B: Chemical, 258: pg: 1-9, (DOI: 10.1016/j.snb.2017.11.073)
- Mubashir Gulzar, (2017), "Tribological Study Of Nanoparticles Enriched Bio-based Lubricants For Engine Piston Ring--Cylinder Interaction", : pg: 1-213, University of Malaya
- Ulrich Wulf, Jan KucËera, Hans Richter, Manfred Horstmann, Maciej Wiatr, Jan Ho?ntschel, (2017), "Channel Engineering For Nanotransistors In A Semiempirical Quantum Transport Model", Mathematics, 5, 68: pg: 1-17, (DOI: 10.3390/math5040068)
- Fabian Hosenfeld, Fabian Horst, Benjami?n In?i?guez, F. Lime, A. Kloes, (2017), "A Quantum Wave Based Compact Modeling Approach For The Current In Ultra-Short DG MOSFETs Suitable For Rapid Multi-Scale Simulations", Electronics, : pg: 70-79, (DOI: 10.1016/j.sse.2017.08.006)
- Bing Zhang, Hongyun Meng, Xue Wang, Honghong Chang, Wenlong Wei, (2017), "Bio-dye Sensitized Detection Of Hg 2+ Based GO-ZnO-CdS Nanohybrids", Sensors and Acuators B: Chemical, 253: pg: 495-501, 0925-4005, (DOI: 10.1016/j.snb.2017.06.026)
- Lang Zeng, Deming Zhang, Tianqi Gao, Fanghui Gong, Xiaowan Qin, Mingzhi Long, Youguang Zhang, Weisheng Zhao, (2017), "Performance Evaluation And Optimization Of Single Layer MoS2 Double Gate Transistors With Schottky Barrier Contacts", IEEE Transactions on Electron Devices, : pg: 1-8, 0018-9383 (DOI: 10.1109/TED.2017.2703589)
- Juan Balach, Tony Jaumann, Lars Giebeler, (2017), "Nanosized Li 2 S-based Cathodes Derived From MoS 2 For High-energy Density LiâS cells and SiâLi2S full cells in carbonate-based electrolyte", Energy Storage Materials, : pg: 1-8, (DOI: 10.1016/j.ensm.2017.03.013)
- Cheng-Kuei Lee, Jin-Yu Zhang, Yan Wang, (2017), "Simulation On The Performance Comparison For Nanoscale SOI And Bulk Junctionless FinFETs", Semiconductor Technology International Conference \CSTIC), 2017 China, : pg: 1-3
- Lirong Yan, Haixia Shi, Xiaowei Sui, Zebin Deng, Li Gao, (2017), "MoS 2-DNA And MoS 2 Based Sensors", RSC Advances, 7: pg: 23573-23582, (DOI: 10.1039/c7ra02649h)
- Xu Hun, Shanshan Wang, Shiyu Wang, Jikuan Zhao, Xiliang Luo, (2017), "A Photoelectrochemical Sensor For Ultrasensitive Dopamine Detection Based On Single-Layer NanoMoS 2 Modified Gold Electrode", Sensors and Acuators B: Chemical, 249: pg: 83-89, (DOI: 10.1016/j.snb.2017.04.065)
- Chandan Yadav, Mayank Agrawal, Amit Agarwal, Y Chauhan, (2017), "Compact Modeling Of Charge, Capacitance, And Drain Current In III-V Channel Double Gate FETs", IEEE Transactions on Nanotechnology, 16, 2: pg: 347-354, (DOI: 10.1109/TNANO.2017.2669092)
- Chek Ooi, Soo Lim, (2016), "Study Of Timing Characteristics Of NOT Gate Transistor Level Circuit Implemented Using Nano-MOSFET By Analyzing Sub-Band Potential Energy Profile and Current-Voltage Characteristic of Quasi-Ballistic Transport", World Journal of Nano Science and Engineeng, 6: pg: 177-188, (DOI: 10.4236/wjnse.2016.64016)
- Avirup Dasgupta, Amit Agarwal, Sourabh Khandelwal, Y Chauhan, (2016), "Compact Modeling Of Surface Potential, Charge, And Current In Nanoscale Transistors Under Quasi-Ballistic Regime", IEEE Transactions on Electron Devices, 63, 11: pg: 4151-4159, 0018-9383, (DOI: 10.1109/TED.2016.2603540)
- M. Gulzar, H. Masjuki, M. Kalam, M. Varman, N. Zulkifli, R. Mufti, Rehan Zahid, (2016), "Tribological Performance Of Nanoparticles As Lubricating Oil Additives", Journal of Nanoparticle Research, 18, 223: pg: 1-25, (DOI: 10.1007/s11051-016-3537-4)
- Dhriti Duggal, Rajnish Sharma, (2016), "Analytical Models For Single Gate And Double Gate MOSFETs In Subthreshold Regime: A Survey", 2016 International Conference on Microelectronics, Computing and Communications \MicroCom), : pg: 1-5, 978-1-4673-6621-2/16
- Fabian Hosenfeld, Michael Graef, Fabian Horst, A. Kloes, Benjami?n In?i?guez, F. Lime, (2016), "Modeling Approach For Rapid NEGF-based Simulation Of Ballistic Current In Ultra-short DG MOSFETs", MIXDES 2016, : pg: 52-57, 978-83-63578-08-4, (DOI: 10.1109/MIXDES.2016.7529699)
- O Yee, L King, (2016), "A Comparative Study Of Quantum Gates And Classical Logic Gates Implemented Using Solid-State Double-Gate Nano-MOSFETs", Int. J. Nanoelectronics and Materials , 9: pg: 123-132
- H. Wang, (2016), "Carbon Nanotube TFETs: Structure Optimization With Numerical Simulation", Tunneling Field Effect Transistor Technology, : pg: 181-210, 978-3-319-31651-2, (DOI: 10.1007/978-3-319-31653-6_7)
- Tapas Dutta, Piyush Kumar, Priyank Rastogi, Amit Agarwal, Y Chauhan, (2016), "Atomistic Study Of Band Structure And Transport In Extremely Thin Channel InP MOSFETs", Phys. Status Solii A, : pg: 1-7, (DOI: 10.1002/pssa.201532727)
- Tapas Dutta, Sanjay Kumar, Priyank Rastogi, Amit Agarwal, Y Chauhan, (2016), "Impact Of Channel Thickness Variation On Bandstructure And Source-to-Drain Tunneling In Ultra-Thin Body III-V MOSFETs", IEEE Journal of the Electron Devices Society, 4, 2: pg: 66-71, (DOI: 10.1109/JEDS.2016.2522981)
- Y. Zhao, U. Hetmaniuk, S. Patil, J. Qi, M. Anantram, (2016), "Nested Dissection Solver For Transport In 3D Nano-electronic Devices", Journal of Computational Electronics, : pg: 1-13, (DOI: 10.1007/s10825-015-0778-x)
- Xin Huang, Wei Liu, Aihua Zhang, Yan Zhang, Zhonglin Wan, (2016), "Ballistic Transport Of Single-layer MoS2 Piezotronic Transistors", NanoResearch, 9, 2: pg: 282-290, 1998-0124, (DOI: 10.1007/s12274-015-0908-6)
- Yang Sheng, Chang Xia, Zhan Li, Guo Ru, (2015), "Full Geometric Simulation Of Miniaturized GaN Double-heterojunction High Electron Mobility Transistors By A Multiscale Approach Coupling Quantum And Semi-classical Transport", Opt Quant Electron , 47: pg: 2659-2666, (DOI: 10.1007/s11082-015-0148-8)
- Abir Shadman, Ehsanur Rahman, Sudipta Biswas, Kanak Datta, Q. Khosru, (2014), "Ballistic Transport Characteristic Of Ingaas Quantum Well Surface Channel MOSFET Including Effects Of Physical Device Parameter", 8th International Conference on Electrical and Computer Engineering, : pg: 667-670, 978-1-4799-4166-7/14
- Sudip Saha, Ibnul Iqbal, Md Goni, (2014), "Self Consistent Field Method With Damped Oscillation For Nano Device", 2013 International Conference on Electrical Information and Communication Technology \EICT), Electrical Information and Communication Technology \EICT), 2013 International Conference on, : pg: 1-5, IEEE, 978-1-4799-2299-4/13/, (DOI: 10.1109/EICT.2014.6777866 )
- Raffaella Lo Nigro, Patrick Fiorenza, Maria Catalano, Gabriele Fisichella, Fabrizio Roccaforte, Graziella Malandrino, (2013), "Binary And Complex Oxides Thin Films For Microelectronics Applications: An Insight Into Their Growth And Advanced Nanoscopic Investigation", Surface And Coatings Technology, Elsevier, 230: pg: 152-162, (DOI: 10.1016/j.surfcoat.2013.06.069)
- T. Dutta, Quentin Rafhay, Raphael Clerc, J. Lacord, S. Monfray, Georges Pananakakis, F. Boeuf, Gerard Ghibaudo, (2013), "Impact Of Quantum Effects On The Short Channel Effects Of III--V NMOSFETs In Weak And Strong Inversion Regimes", Solid-State Electronics, Elsevier, 88: pg: 43-48, (DOI: http://dx.doi.org/10.1016/j.sse.2013.04.007)
- O Yee, L.S. King, (2013), "TEMPERATURE VARIATION EFFECTS IN NANO-MOSFETS BASED ON SIMULATION STUDY", International Journal of Education and Research, 1, 2: pg: 1-17
- Z. Kordrostami, M. Sheikhi, A. Zarifkar, (2013), "Cutoff Frequency And Switching Delay Of Underlap Carbon Nanotube FETs", Fullerenes, Nanotubes And Carbon Nanostructures, Taylor & Francis, 21, 8: pg: 681-694, (DOI: 10.1080/1536383X.2012.654542)
- Saji Joseph, Vincent Mathew, George T, (2012), "Transport Characteristics And Subthreshold Behavior Of High-K Dielectric Double Gate MOSFETs With Parallel Connected Gates", Journal of Electron Devices, 16: pg: 1363-1369
- D. Jain, S.K. Jaiswal, K. Verma, S. Kumar, (2012), "Power Double Gate MOSFET Modeling Based On Adaptive Neuro-Fuzzy Inference System For Nano Scale Circuit Simulation", Computational Intelligence and Communication Networks \CICN), 2012 Fourth International Conference on, Computational Intelligence and Communication Networks \CICN), 2012 Fourth International Conference on, : pg: 500-505, IEEE, (DOI: 10.1109/CICN.2012.164)
- Z. Kordrostami, M.H. SHEIKHI, A. Zarifkar, (2012), "DESIGN DEPENDENT CUTOFF FREQUENCY OF NANOTRANSISTORS NEAR THE ULTIMATE PERFORMANCE LIMIT", International Journal Of Modern Physics B, World Scientific, 26, 32: pg: 1250196-1-1250196-14, (DOI: 10.1142/S0217979212501962)
- M. ImtiazAlamgir, A.U.H. Gulib, K.M.U. Ahmed, (2012), "Performance Analysis Of Dg Mosfets With High-K Stack On Top & Bottom Gate", International Journal of Scientific & Technology Rsearch, 1, 5: pg: 96-102, 2277-8616
- S. Chouhan, Y. Kumar, A. Chhipa, (2012), "Comparative Study Of DG-MOSFET Modeling Based On ANFIS And NEGF", International Journal of Engineering and Innovative Technology, 1, 4: pg: 95-101
- E. Farzana, S. Chowdhury, R. Ahmed, M.Z.R. Khan, (2012), "Analysis Of Temperature And Wave Function Penetration Effects In Nanoscale Double-gate MOSFETs", Applied Nanoscience, Springer, 2, 2: pg: -, (DOI: 10.1007/s13204-012-0090-z)
- J. Xiong, G. Wang, W. Mathis, (2012), "The influence of Buttiker probe scattering to the port behavior of nanoscale metal-oxide-semiconductor devices", International Journal Of Circuit Theory And Applications, Wiley Online Library: pg: -, (DOI: 10.1002/cta.1805)
- A.F. Abo-Elhadeed, (2011), "Modeling Ballistic Double Gate MOSFETs Using Neural Networks Approach", Electron Devices \CDE), 2011 Spanish Conference on , Electron Devices \CDE), 2011 Spanish Conference on, : pg: -, IEEE, 978-1-4244-7863-7 (DOI: 10.1109/SCED.2011.5744165 )
- J.Z. Huang, W.C. Chew, M. Tang, L. Jiang, (2011), "Efficient Simulation And Analysis Of Quantum Ballistic Transport In Nanodevices With AWE", Electron Devices, IEEE Transactions On, IEEE, 59, 2: pg: 468-476, 0018-9383 (DOI: 10.1109/TED.2011.2176130)
- V. Lamba, D. Engles, S. Malik, M. Verma, (2009), "Quantum transport in silicon double-gate MOSFET", 2nd International Workshop On Electron Devices And Semiconductor Technology, 2009, 2nd International Workshop on Electron Devices and Semiconductor Technology, 2009, : pg: 1-4, IEEE, 06, 978-1-4244-3831-0, (DOI: 10.1109/EDST.2009.5166116)
- M. Sabbagh, Wael Fikry, O.A. Omar, (2009), "Quantum compact model for ballistic double gate MOSFETs", Design & Technology of Integrated Systems in Nanoscal Era, 2009. DTIS '09. 4th International Conference on, Design \& Technology of Integrated Systems in Nanoscal Era, 2009. DTIS'09. 4th International Conference on, : pg: 144-146, IEEE, 05, 978-1-4244-4320-8 (DOI: 10.1109/DTIS.2009.4938043)
- David Jimenez, J. Saenz, B Iniquez, J. Sune, L.F. Marsal, J. Pallares, (2009), "Unified compact model for the ballistic quantum wire and quantum well metal-oxide-semiconductor field-effect-transistor", Journal of Applied Physics, AIP Publishing, 94, 2: pg: 1061-1068, 01, (DOI: 10.1063/1.1582557)
- O Kurniawan, P Bai, E Li, (2009), "Ballistic calculation of nonequilibrium Green's function in nanoscale devices using finite element method", Journal Of Physics D: Applied Physics, IOP Publishing, 42, 10: pg: 1-11, 04, (DOI: 10.1088/0022-3727/42/10/105109)
- Fayçal Djeffal, Z. Ghoggali, Z. Dibi, N. Lakhdar, (2009), "Analytical analysis of nanoscale multiple gate MOSFETs including effects of hot-carrier induced interface charges", Microelectroincs Reliability, Elsevier, 49, 4: pg: 377-381, 02, 0026-2714, (DOI: 10.1016/j.microrel.2008.12.011)
- H. Iwata, T. Matsuda, T. Ohzone, (2009), "Multiband simulation of quantum transport in nanoscale double-gate MOSFETs", Electronics, Elsevier, 53, 10: pg: 1130-1134, 07, 0038-1101, (DOI: 10.1016/j.sse.2009.06.011)
- H. Uppal, I. Mitrovic, S. Hall, B. Hamilton, V. Markevich, A. Peaker, (2009), "Breakdown and degradation of ultrathin Hf-based \HfO)\SiO) gate oxide films", Journal Of Vacuum Science And Technology B, 27, 1: pg: 443-447, 02, 0734-211X, (DOI: 10.1116/1.3025822)
- N.-C. Tsai, Y.-R. Chiang, S.-L. Hsu, (2009), "Theoretic analysis on electric conductance of nano-wire transistors", Applied Physics A: Materials Science & Processing, Springer, 98, 1: pg: 135-145, 11, 0947-8396/1432-0630, (DOI: 10.1007/s00339-009-5453-2)
- O Kurniawan, P Bai, E Li, (2009), "Ballistic calculation of NEGF in nanoscale devices using finite element method", Journal Of Physics D: Applied Physics, IOP Publishing, 42, 10: pg: 105109-, 04, (DOI: 10.1088/0022-3727/42/10/105109)
- Md. Ashraf, Asif Khan, Anisul Haque, (2009), "Wave function penetration effects on ballistic drain current in double gate MOSFETs fabricated on \ 1 0 0 ) and \1 1 0) silicon surfaces", Electronics, Elsevier, 53, 3: pg: 271-275, 02, 0038-1101, (DOI: 10.1016/j.sse.2008.12.010)
- Mohsen Hayati, Majid Seifi, Abbas Rezaei, (2008), "The Computational Intelligence in Simulation of DG MOSFET: Application to the simulation of the nanoscale CMOS circuit", Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on, Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on, : pg: 138-142, IEEE, 02, 978-1-4244-3873-0 (DOI: 10.1109/SMELEC.2008.4770294)
- I. Pappas, Gerard Ghibaudo, C.A. Dimitriadis, C. Fenouillet-Béranger, (2008), "Backscattering coefficient and drift-diffusion mobility extraction in short channel MOS devices", Electronics, Elsevier, 53, 1: pg: 54-56, 11, 0038-1101, (DOI: 10.1016/j.sse.2008.09.012)
- Quentin Rafhay, Raphael Clerc, Gerard Ghibaudo, Georges Pananakakis, (2008), "Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel", Solid State Electronics, Elsevier, 52, 10: pg: 1474-1481, 07, (DOI: doi:10.1016/j.sse.2008.06.035)
- Keng-Ming Liu, Wanqiang Chen, L. Register, S.K. Banerjee, (2008), "Schroedinger equation Monte Carlo in three dimensions for simulation of nanoscale metal-oxide of carrier transport in three-dimensional nanoscale metal oxide semiconductor field-effect transistors", Journal of Applied Physics, 104, 11: pg: -, 01, (DOI: 10.1063/1.3031303)
- A. Khakifirooz, (2008), "Transport Enhancement Techniques for Nanoscale MOSFETs", : pg: 1-183, Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 02
- Jian-nong Tong, Zue-chang Zou, Xu-bang Shen, (2008), "Modeling quantum transport in nanoscale vertical SOI nMOSFET", Wuhan University Journal Of Natural Sciences, Springer, 9, 6: pg: 918-920, 03, (DOI: 10.1007/BF02850799)
- Wanqiang Chen, L. Register, S.K. Banerjee, (2008), "Schrodinger equation Monte Carlo in two dimensions for simulation of nanoscale metal-oxide", Journal of Applied Physics, 103, 2: pg: 24508-, 01, (DOI: 10.1063/1.2809403)
- Wael Fikry, S El Din Habeeb, Wael Manhawy, (2008), "New model of ultra short symmetric double gate MOSFET", Canadian Conference On Electrical And Computer Engineering, 2008, Electrical and Computer Engineering, 2008. CCECE 2008. Canadian Conference on, : pg: 105-109, IEEE, 07, 978-1-4244-1642-4, (DOI: 10.1109/CCECE.2008.4564504)
- T. Abdolkader, (2007), "A new approach for numerical simulation of quantum transport in double-gate SOI", International Journal Of Numerical Modelling: Electronic Networks, Devices And Fields, Wiley Online Library, 20, 6: pg: 299-309, 03, (DOI: 10.1002/jnm.647)
- Yasser Sabry, T. Abdolkader, Wael Farouk, (2007), "Uncoupled Mode-Space Simulation Validity for Double-Gate MOSFETs", International Conference On Microelectronics, 2007, International Conference on Microelectronics, 2007, : pg: 351-354, IEEE, 12, 978-1-4244-1846-6 \print), (DOI: 10.1109/ICM.2007.4497727)
- Saumitra Mehrotra, (2007), "A Simulation Study of Silicon Nanowire Field Effect Transistors \FETs)", : pg: -, University of Cincinnati, 02
- Rhonda Myers-Riggs, (2007), "Simulation and Design of InAs Nanowire Transistors Using Ballistic Transport", : pg: -, University of Cincinnati, 10
- Asif Khan, Md. Ashraf, Anisul Haque, (2007), "Influence of Wave Function Penetration on Short Channel Effects in Nanoscae Double Gate MOSFETs", Electron Devices And Solid-state Circuits, 2007. Edssc 2007, Iee Eonference On, : pg: 109-112, 12, 978-1-4244-0637-1, (DOI: 10.1109/EDSSC.2007.4450074)
- Biswajit Ray, K. Shubhakar, S. Mahapatra, (2007), "Necessity for Quantum Mechanical Simulation for the Future Technology Nodes", Physics Of Semiconductor Devices, 2007. IWPSD 2007. International Workshop On, 14th international workshop on the physics of semiconductor devices, : pg: 880-883, 12, 978-1-4244-1728-5, (DOI: 10.1109/IWPSD.2007.4472662)
- Quentin Rafhay, Raphael Clerc, Gerard Ghibaudo, Georges Pananakakis, (2007), "Impact of source to drain tunneling on the lon/loff trade-off of alternative channel material MOSFETs", Semiconductor Device Research Symposium, 2007 International, : pg: 1-2, 12, 978-4244-1892-3, (DOI: 10.1109/ISDRS.2007.4422479)
- M Anguita, E Ros, J Bernier, J. Fernandez, (2006), "SCE Toolboxes for the Development of High-Level Parallel Applications", Computational Science - ICCS 2006 6th International Conference, Reading, UK, May 28-31, 2006. Proceedings, Part II, Computational Science - ICCS 2006, Springer, 3992: pg: 518-525, 05, 0302-9743, (DOI: 10.1007/11758525_70)
- S. Balasubramanian, (2006), "Nanoscale thin-body MOSFET design and applications", : pg: 1-185, University of California at Berkeley, 10
- Alexander Klös, (2006), "Nanotechnologie in der Elektronik: Ein Ausblick auf die Bauelemente der Zukunft", Fachtagung Sensorik - Messtechnik - Technologien 2006, Wetzlar: pg: -, 02
- D. Vasileska, H Khan, Shaikh Ahmed, Christian Ringhofer, C. Heitzinger, (2005), "Quantum and Coulomb effects in nanodevices", International Journal Of Nanoscience, World Scientific, 4, 3: pg: 305-361, 04
- Xue Shao, Zhipeng Yu, (2005), "Nanoscale FinFET simulation: A quasi-3D quantum mechanical model using NEGF", Electronics, Elsevier, 49, 8: pg: 1435-1445, 08, (DOI: 10.1016/j.sse.2005.04.017)
- T. Xia, (2005), "Simulation Study of Deep Sub-Micron and Nanoscale Semiconductor Transistors", The University of Texas at Austin: pg: 1-148, University of Texas at Austin, 05
- S. Xiong, J. Bokor, (2005), "Structural optimization of SUTBDG devices for low-power applications", Electron Devices, IEEE, IEEE, 52, 3: pg: 360-366, 03, (DOI: 10.1109/TED.2005.843869)
- H. Iwata, T. Matsuda, T. Ohzone, (2005), "Influence of image and exchange-correlation effects on electron transport in nanoscale DG MOSFETs", Electron Devices, IEEE, IEEE, 52, 7: pg: 1596-1602, 07, (DOI: 10.1109/TED.2005.850947)
- M. Zhao, V. Chadha, R.J. Figueiredo, (2005), "Supporting application-tailored grid file system sessions with WSRF-based services", High Performance Distributed Computing, 2005. HPDC-14. Proceedings. 14th IEEE International Symposium On, High Performance Distributed Computing, 2005. HPDC-14. Proceedings. 14th IEEE International Symposium on, : pg: 24-33, IEEE, 07, 0-7803-9037-7, (DOI: 10.1109/HPDC.2005.1520930)
- Shaikh Ahmed, Christian Ringhofer, D. Vasileska, (2005), "Efficacy of the Thermalized Effective Potential Approach for Modeling Nano-Devices", Simulation Of Semiconductor Processes And Devices, 2005. SISPAD 2005. International Conference On, Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on, : pg: 251-254, IEEE, 09, 4-9902762-0-5 (DOI: 10.1109/SISPAD.2005.201520)
- A. Akturk, N. Goldsman, G. Metze, (2005), "Self-consistent modeling of heating and MOSFET performance in 3-D integrated circuits", Electron Devices, IEEE, IEEE, 52, 11: pg: 2395-2403, 11, (DOI: 10.1109/TED.2005.857187)
- H.A. Hamid, B Iniquez, David Jimenez, L.F. Marsal, J. Pallares, (2005), "Double gate MOSFET compact model including scattering", Electron Devices, 2005 Spanish Conference On, 49, 3: pg: 413-417, 02, 0-7803-8810-0, (DOI: 10.1109/SCED.2005.1504418 )
- T. Abdolkader, M. Fathi, Wael Fikry, O.A. Omar, (2005), "FETMOSS: a software tool for 2D simulation of double-gate MOSFET", Enabling Technologies For The New Knowledge Society: Iti 3rd International Conference On Information And Communications Technology, 2005, Information and Communications Technology, 2005. Enabling Technologies for the New Knowledge Society: ITI 3rd International Conference on, Wiley Online Library: pg: 193-208, IEEE, 12, 0-7803-9270-1, (DOI: 10.1109/ITICT.2005.1609624)
- David Jimenez, B Iniquez, J. Sune, J.J. Saenz, (2004), "Analog performance of the nanoscale double-gate metal-oxide-semiconductor field-effect-transistor near the ultimate scaling limits", Journal of Applied Physics, AIP, 96, 9: pg: 5271-5276, 11, (DOI: 10.1063/1.1778485)
- T. Abdolkader, Wael Fikry, (2004), "Semi-Empirical quantum correction model for electron concentration in symmetric double gate mosfets", 2004 International Conference on Electrical, Electronic and Computer Engineering ICEEC?O4, Electrical, Electronic and Computer Engineering, 2004. ICEEC'04. 2004 International Conference on, : pg: 549-552, IEEE, 09, 0-7803-8575-6 (DOI: 10.1109/ICEEC.2004.1374527 )
- T. Xia, L. Register, S.K. Banerjee, (2004), "Quantum Transport in Carbon Nanotube Transistors: Complex Band Structure Effects", Journal of Applied Physics, AIP, 95, 3: pg: 1597-1599, 02, 0021-8979, (DOI: 10.1063/1.1631747)
- S.E. Laux, (2004), "Arbitrary crystallographic orientation in QDAME with Ge 7.5 nm DGFET examples", Journal of Computational Electronics, Springer, 3, 3: pg: 379-385, 10, (DOI: 10.1007/s10825-004-7081-6)
- P. Graham, M. Gokhale, (2004), "Nanocomputing in the presence of defects and faults: a survey", Nano, Quantum And Molecular Computing: Implications To High Level Design And Validation, Nano, quantum and molecular computing, Kluwer Academic Publishers: pg: 39-67, 06, 1-4020-8067-0
- Jim Fonseca, S. Kaya, (2004), "Accurate treatment of interface roughness in nanoscale DG MOSFETs using non-equilibrium Green's functions", Electronics, Elsevier, 48, 32767: pg: 1843-1847, 06, 0038-1101, (DOI: 10.1016/j.sse.2004.05.024)
- Vlado Stankovski, Ziga Turk, Tomo Cerovsek, (2003), "D24: Guide for tools and services delivery", Citeseer: pg: -, ICCI, 12
- S. Balasubramanian, L. Chang, B. Nikolic, Tsu-Jae King, (2003), "Circuit-Performance Implications for Double-Gate MOSFET Scaling Below 25nm", 2003 Silicon Nanoelectronics Workshop, Proc. Silicon Nanoelectronics Workshop, : pg: -, 06
- David Jimenez, J.J. Saenz, B Iniquez, J. Sune, L.F. Marsal, J. Pallares, (2003), "Compact modeling of nanoscale MOSFETs in the ballistic limit", European Solid-State Device Research, 2003. 33rd Conference on. ESSDERC , European Solid-State Device Research, 2003 33rd Conference on. ESSDERC'03, IEEE: pg: 187-190, IEEE, 09, 0-7803-7999-4, (DOI: 10.1109/ESSDERC.2003.1256842)
- P. Beckett, (2003), "Exploiting Multiple Functionality for Nano-Scale Reconfigurable Systems", Great Lakes Symposium On VLSI, Proceedings of the 13th ACM Great Lakes symposium on VLSI, : pg: 50-55, ACM, 04, 1-58113-677-3
- T. Low, Y.T. Hou, M.F. Li, Chunxiang Zhu, A. Chin, Ganesh Samudra, L. Chan, D.-L. Kwong, (2003), "Investigation of Performance Limits of Germanium Double-Gated MOSFETs", IEEE International Electron Devices Meeting, 2003. IEDM , Electron Devices Meeting, 2003. IEDM'03 Technical Digest. IEEE International, : pg: 29.4.1-29.4.4, IEEE, 12, 0-7803-7872-5, (DOI: 10.1109/IEDM.2003.1269374)
- Jim Fonseca, S. Kaya, (2003), "Simulation of interface roughness in DG-MOSFETs using non-equilibrium Green's functions", NT, Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International, Elsevier: pg: 512-513, IEEE, 12
- E. Pop, Sanjiv Sinha, K.E. Goodson, (2002), "Monte Carlo Modeling of Heat Generation in Electronic Nanostructures", Proceedings Of The IMECE 02 2002 ASME International Mechanical Engineering Congress and Exposition, Proceedings of the IMECE \'02, : pg: 1-6, American Society of Mechanical Engineers, 11
- Alberto Prieto, Javier Fernandez, Antonio Canas, Antonio Diaz, Jesus Gonzalez, Julio Ortega, (2002), "Performance of Message-Passing MATLAB Toolboxes", High Performance Computing For Computational Science--VECPAR 2002, High Performance Computing for Computational Science--VECPAR 2002, Springer: pg: 228-242, 06, 978-3-540-00852-1, (DOI: 10.1007/3-540-36569-9_14)
Affiliated authors
- Yuanchen Chu, Prasad Sarangapani, J. Charles, Gerhard Klimeck, T Kubis, (2018), "Explicit Screening Full Band Quantum Transport Model For Semiconductor Nanodevices", ArXiv Preprint ArXiv:1803.11352, : pg: 1-8
- H.S. Pal, Dmitri Nikonov, R. Kim, Mark Lundstrom, (2012), "Electron-Phonon Scattering In Planar MOSFETs: NEGF And Monte Carlo Methods", : pg: 1-30
- Yunfei Gao, T. Low, Mark Lundstrom, Dmitri Nikonov, (2010), "Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance", Journal of Applied Physics, 108, 8: pg: 083702-1-083702-10, 02, 1089-7550, (DOI: 10.1063/1.3496666)
- Himadri Pal, T. Low, Mark Lundstrom, (2009), "NEGF analysis of InGaAs Schottky barrier double gate MOSFETs", Electron Devices Meeting, 2008. IEDM 2008. IEEE International, Electron Devices Meeting, 2008. IEDM 2008. IEEE International, : pg: 1-4, Ieee, 02, 978-1-4244-2377-4 (DOI: 10.1109/IEDM.2008.4796843)
- N. Neophytou, Titash Rakshit, Mark Lundstrom, (2009), "Performance Analysis of 60-nm Gate-Length III-V InGaAs HEMTs: Simulations Versus Experiments", IEEE Transactions on Electron Devices, IEEE, 56, 7: pg: 1377-1387, 06, 0018-9383, (DOI: 10.1109/TED.2009.2021437)
- Mark Lundstrom, Yang Liu, (2009), "Simulation-Based Study of III-V HEMTs Device Physics for High-Speed Low-Power Logic Applications", 215th ECS Meeting/The Electrochemical Society, Meeting Abstracts, : pg: 1-1, The Electrochemical Society, 05
- Gerhard Klimeck, M. McLennan, Mark Lundstrom, George Adams III, (2008), "nanoHUB.org - online simulation and more materials for semiconductors and nanoelectronics in education and research", 8th Ieee Conference On Nanotechnology, 2008. Nano , Nanotechnology, 2008. NANO'08. 8th IEEE Conference on, : pg: 401-404, IEEE, 08
- Yang Liu, N. Neophytou, Gerhard Klimeck, Mark Lundstrom, (2008), "Band Structure Effects on the Performance of III-V Ultra-thin-body SOI MOSFETs", IEEE Transactions on Electron Devices, 55, 5: pg: 1116-1122, 05, 0018-9383, (DOI: 10.1109/TED.2008.919290)
- H.S. Pal, K.D. Cantley, Shaikh Ahmed, Mark Lundstrom, (2008), "Influence of bandstructure and channel structure on the inversion layer capacitance of silicon and GaAs MOSFETs", IEEE Transactions on Electron Devices, IEEE, 55, 3: pg: 904-908, 03, (DOI: 10.1109/TED.2007.914830)
- Shaikh Ahmed, Gerhard Klimeck, D. Kearney, Michal McLennan, M Anantram, (2007), "Quantum Simulations Of Dual Gate MOSFET Devices: Building And Deploying Community", International Journal of High Speed Electronics and Systems, 17, 3: pg: 485-494
- Deepanjan Datta, Samiran Ganguly, S Dasgupta, (2007), "Low band-to-band tunelling and gate tunnelling current in novel nanoscale double-gate architecture: simulations and investigation", Nanotechnology, 18: pg: 1-9, 04, (DOI: 10.1088/0957-4484/18/21/215201)
- Nauman Butt, M. Alam, (2007), "Scaling Limits of Capacitorless Double Gate DRAM Cell", 2006 International Conference On Simulation Of Semiconductor Processes And Devices, 2006 International Conference on Simulation of Semiconductor Processes and Devices, : pg: 302-305, IEEE, 01, 1-4244-0404-5 (DOI: 10.1109/SISPAD.2006.282896)
- K.D. Cantley, Y. Liu, H.S. Pal, T. Low, Shaikh Ahmed, Mark Lundstrom, (2007), "Performance Analysis of III-V Materials in a Double-Gate nano-MOSFET", Electron Devices Meeting, 2007, IEDM 2007, IEEE International, Electron Devices Meeting, 2007. IEDM 2007. IEEE International, : pg: 113-116, IEEE, 12, 978-1-4244-1508-3, (DOI: 10.1109/IEDM.2007.4418877)
- Shaikh Ahmed, Gerhard Klimeck, D. Kearney, M. McLennan, M.P. Anantram, (2007), "Quantum Simulations of Dual Gate MOSFET Devices: Building and Deploying Community Nanotechnology Software Tools on nanoHUB.org", International Journal of High Speed Electronics and Systems, World Scientific Publishing Company, 17, 3: pg: 485-494, 09, (DOI: 10.1142/S0129156407004679)
- Mark Lundstrom, (2006), "Nanotransistors: A Bottom-Up View", Proceeding Of The 36th European Solid-state Device Research Conference, Proceeding of the 36th European Solid-State Device Research Conference, : pg: 33-40, IEEE, 09, 1-4244-0301-4, (DOI: 10.1109/ESSDER.2006.307633)
- Mark Lundstrom, Gerhard Klimeck, (2006), "The NCN: Science, Simulation, and Cyber Services", Emerging Technologies - Nanoelectronics, 2006 Ieee Conference On, Emerging Technologies-Nanoelectronics, 2006 IEEE Conference on, : pg: 496-500, IEEE, 01, 0-7803-9357-0, (DOI: 10.1109/NANOEL.2006.1609779)
- H. Ananthan, K. Roy, (2006), "A Compact Physical Model for Yield Under Gate Length and Body Thickness Variations in Nanoscale Double-Gate CMOS", Electron Devices, IEEE, IEEE, 53, 9: pg: 2151-2159, 09, (DOI: 10.1109/TED.2006.880365)
- M. Zhao, R.J. Figueiredo, (2006), "Application-Tailored Cache Consistency for Wide-Area File Systems", Distributed Computing Systems, 2006. Icdcs 2006. 26th Ieee International Conference On, Distributed Computing Systems, 2006. ICDCS 2006. 26th IEEE International Conference on, : pg: 41-, IEEE, 07, 0-7695-2540-7, (DOI: 10.1109/ICDCS.2006.17)
- Jian Wang, (2005), "Device Physics and Simulation of Silicon Nanowire Transistors", : pg: 1-149, Purdue University, 08
- A. Rahman, Gerhard Klimeck, Mark Lundstrom, (2005), "Novel channel materials for ballistic nanoscale MOSFETs-bandstructure effects", Electron Devices Meeting, 2005. Iedm Technical Digest. Ieee International, Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International, : pg: 604-, IEEE, 12, (DOI: 10.1109/IEDM.2005.1609421)
- J.A.B. Fortes, R.J. Figueiredo, Mark Lundstrom, (2005), "Virtual computing infrastructures for nanoelectronics simulation", Proceedings of the IEEE, IEEE, 93, 10: pg: 1839-1847, 10, (DOI: 10.1109/JPROC.2005.853545)
- R. Ravishankar, G. Kathawala, U. Ravaioli, S. Hasan, Mark Lundstrom, (2005), "Comparison of Monte Carlo and NEGF simulations of double gate MOSFETs", Journal of Computational Electronics, Springer, 4, 1: pg: 39-43, 04, (DOI: 10.1007/s10825-005-7104-y)
- A. Rahman, Mark Lundstrom, Avik Ghosh, (2005), "Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers", Journal of Applied Physics, AIP, 97, 5: pg: 0-0, 02, (DOI: 10.1063/1.1845586)
- A. Rahman, Mark Lundstrom, Avik Ghosh, (2004), "Effective Mass Approach for n-MOSFETs on Arbitrarily Oriented Wafers", Journal of Computational Electronics, Springer, 3, 3: pg: 281-284, 10, 0-7803-8649-3 (DOI: 10.1007/s10825-004-7062-9)
- S. Adabala, V. Chadha, Puneet Chawla, R.J. Figueiredo, J.A.B. Fortes, Ivan Krsul, A. Matsunaga, M. Tsugawa, Jian Zhang, M. Zhao, L. Zhu, Xiaomin Zhu, (2004), "From virtualized resources to virtual computing grids: the In-VIGO system", Future Generation Computer Systems, Elsevier, 21, 6: pg: 896-909, 02, (DOI: 10.1016/j.future.2003.12.021)
- Sayed Hasan, Jian Wang, Mark Lundstrom, (2004), "Device design and manufacturing issues for 10 nm-scale MOSFETs: a computational study", Solid State Electronics, Elsevier, 48, 6: pg: 867-875, 06, (DOI: 10.1016/j.sse.2003.12.022)
- Jian Wang, E. Polizzi, Mark Lundstrom, (2003), "A computational study of ballistic silicon nanowire transistors", Electron Devices, Electron Devices Meeting, 2003. IEDM'03 Technical Digest. IEEE International, : pg: 29.5.1-29.5.4, IEEE, 12, 0-7803-7872-5, (DOI: 10.1109/IEDM.2003.1269375)
- A. Rahman, Avik Ghosh, Mark Lundstrom, (2003), "Assessment of Ge n-MOSFETs by quantum simulation", Electron Devices, Electron Devices Meeting, 2003. IEDM'03 Technical Digest. IEEE International, : pg: 19.4.3-19.4.4, IEEE, 12, (DOI: 10.1109/IEDM.2003.1269324)
- Sebastian Goasguen, R. Venugopal, Mark Lundstrom, (2003), "Modeling transport in nanoscale silicon and molecular devices on parallel machines", Nanotechnology, 2003. Ieee-nano 2003. 2003 Third Ieee Conference On, Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on, 2: pg: 398-401, IEEE, 08, 0-7803-7976-4, (DOI: 10.1109/NANO.2003.1231802)
- A. Rahman, Jihua Guo, S. Datta, Mark Lundstrom, (2003), "Theory of ballistic nanotransistors", Electron Devices, IEEE, IEEE, 50, 9: pg: 1853-1864, 09, (DOI: 10.1109/TED.2003.815366)
- Mark Lundstrom, (2003), "Device physics at the scaling limit: what matters? [MOSFETs]", Electron Devices, Electron Devices Meeting, 2003. IEDM'03 Technical Digest. IEEE International, : pg: 33.1.1-33.1.4, IEEE, 12
- Z. Ren, R. Venugopal, Sebastian Goasguen, S. Datta, Mark Lundstrom, (2003), "nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs", IEEE Transactions on Electron Devices, IEEE, 50, 9: pg: 1914-1925, 09, 0018-9383, (DOI: 10.1109/TED.2003.816524)
- Mark Lundstrom, X. Ren, (2002), "Essential physics of carrier transport in nanoscale MOSFETs", Electron Devices, IEEE, IEEE, 49, 1: pg: 133-141, 01, (DOI: 10.1109/16.974760)
- C.D. Parikh, Mark Lundstrom, (2002), "Electron transport in nanoscale bipolar transistors", 2002 2nd IEEE Conference On Nanotechnology, 2002 2nd IEEE Conference on Nanotechnology, : pg: 103-106, IEEE, 08
- Sebastian Goasguen, A.R. Butt, K.D. Colby, Mark Lundstrom, (2002), "Parallelization of the nanoscale device simulator nanoMOS-2.0 using a 100 nodes linux cluster", Nanotechnology, 2002. IEEE-Nano 2002. Proceedings Of The 2002 2nd IEEE Conference On, Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on, : pg: 409-412, IEEE, 08, 0-7803-7538-6
- David Rumsey, (2001), "Electrical Characterization of Bulk MOSFETs in Terms of Backscattering Coefficients", : pg: 1-67, Purdue University, 12
- Z. Ren, R. Venugopal, S. Datta, Mark Lundstrom, (2001), "Examination of design and manufacturing issues in a 10 nm double gate MOSFET using nonequilibrium Green's function simulation", Electron Devices Meeting, 2001. IEDM Technical Digest. International, Electron Devices Meeting, 2001. IEDM Technical Digest. International, : pg: 541-544, IEEE, 12, 0-7803-7050-3 (DOI: 10.1109/IEDM.2001.979435 )