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OMEN Nanowire
Full-band 3D quantum transport simulation in nanowire structure
Version 1.19 - published on 01 Sep 2021
doi:10.21981/SX3C-YN45 cite this
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Citations Non-affiliated (7) | Affiliated (7)
Non-affiliated authors
- Syed Muyeed, Ibrahim Misbah, (2016), "Study Of The Current On/off Ratio Of An Indium Arsenide Circular Nanowire Transistor Using Non-equilibrium Green's Function Approach", 2016 5th International Conference on Informatics, Electronics and Vision \ICIEV), : pg: 834-838, 978-1-5090-1269-5/16, (DOI: 10.1109/ICIEV.2016.7760119)
- Sanjeev Kharb, Pardeep Saini, (2015), "Impact Of Thickness And Material On Different Electronic Parameters Of GAA-MuGFETs", International Journal of Engineering and Technical Research \IJETR), 3, 6: pg: 103-105, 2321-0869
- Deepika Jamwal, D Dass, R. Prasher, R. Vaid, (2014), "Impact Of Scaling Gate Oxide Thickness On The Performance Of Silicon Based Triple Gate Rectangular Nwfet", Physicsof Semiconductor Devices, Physics of Semiconductor Devices, Springer: pg: 581-584, 978-3-319-03001-2, (DOI: 10.1007/978-3-319-03002-9_146)
- Aron Szabo, Mathieu Lusier, (2013), "Under-the-Barrier Model: An Extension Of The Top-of-the-Barrier Model To Efficiently And Accurately Simulate Ultrascaled Nanowire Transistors", IEEE TRANSACTIONS ON ELECTRON DEVICES, 60, 7: pg: 2353-2360, 0018-9383 (DOI: 10.1109/TED.2013.2263386)
- E.H. Malik, A. Kaur, A. Lather, VK Lamba, B. Kharb, (2012), "Effect Of Thickness And Material On Electronic Properties Of GAA-MuGFETs", International Journal of Soft Computing and Engineering \IJSCE), 2, 4: pg: 284-286
- Y Hashim, O. Sidek, (2012), "Simulation Study Of Temperature Sensitivity Of Silicon Nanowire Transistors With Different Types Of Orientations", IEEJ Transactions On Electrical And Electronic Engineering, Wiley Online Library, 7, 5: pg: 458-460, (DOI: 10.1002/tee.21758)
- Mincheol Shin, (2011), "Quantum transport of holes in 1D, 2D, and 3D devices: the k*p method", Journal of Computational Electronics, 10, 1: pg: 44-50, 02, (DOI: 10.1007/s10825-011-0347-x)
Affiliated authors
- Mathieu Lusier, T Boykin, Gerhard Klimeck, W. Fichtner, (2011), "Atomistic Nanoelectronic Device Engineering With Sustained Performances Up To 1.44 PFlop/s", High Performance Computing, Networking, Storage and Analysis \SC'11), 2011 International Conference for , High Performance Computing, Networking, Storage and Analysis \SC), 2011 International Conference for, : pg: -, IEEE, 978-1-4503-0771-0
- Gerhard Klimeck, Mathieu Lusier, (2010), "Scattering in Si-nanowires--Where Does it Matter?", 2010 Silicon Nanoelectronics Workshop, 2010 Silicon Nanoelectronics Workshop, : pg: 1-2, 06, 978-1-4244-7727-2, (DOI: 10.1109/SNW.2010.5562586)
- Mincheol Shin, Sunhee Lee, Gerhard Klimeck, (2010), "Computational Study on the Performance of Si Nanowire pMOSFETs Based on the k * p Method", IEEE Transactions on Electron Devices, 57, 9: pg: 2274-2283, 09, 0018-9383, (DOI: 10.1109/TED.2010.2052400)
- Mathieu Lusier, Gerhard Klimeck, (2010), "Numerical Strategies towards Peta-Scale Simulations of Nanoelectronics Devices", Network And Parallel Computing, Elsevier, 36, 2: pg: 117-128, 01, 0167-8191, (DOI: 10.1016/j.parco.2010.01.003)
- Sunhee Lee, Hoon Ryu, Zhengping Jiang, Gerhard Klimeck, (2009), "Million Atom Electronic Structure and Device Calculations on Peta-Scale Computer", IEEE proceedings of the 13th International Workshop on Computational Electronics, IEEE proceedings of the 13th International Workshop on Computational Electronics, May 27-29 2009: pg: 1-4, Tsinghua University, Beijing, 05, (DOI: 10.1109/IWCE.2009.5091117)
- Hansang Bae, Steven Clark, Benjamin Haley, Hoon Ryu, Gerhard Klimeck, Sunhee Lee, Mathieu Lusier, Faisal Saied, (2008), "A Nano-electronics Simulator for Petascale Computing: From NEMO to OMEN", TeraGrid 2008, Proceedings of TeraGrid 2008: pg: 1-12, 06
- Mathieu Lusier, Gerhard Klimeck, (2008), "OMEN an Atomistic and Full-Band Quantum Transport Simulator for post-CMOS Nanodevices", 8th IEEE Conference On Nanotechnology, 2008, 8th IEEE Conference on Nanotechnology, 2008, : pg: 354-357, IEEE, 09, (DOI: 10.1109/NANO.2008.110)