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Tunnel FET Compact Model
Model Tunnel FETs based on analytic modeling and WKB method
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Abstract
The purpose of this tool is to provide fast and accurate IV data for conventional Tunnel FETs based on the device design.
Cite this work
Researchers should cite this work as follows:
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- Salazar, Ramon B., Hesameddin Ilatikhameneh, Rajib Rahman, Gerhard Klimeck, and Joerg Appenzeller. "A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations." Journal of Applied Physics 118, no. 16 (2015): 164305.
- Ilatikhameneh, Hesameddin, Ramon B. Salazar, Gerhard Klimeck, Rajib Rahman, and Joerg Appenzeller. "From Fowler-Nordheim to Nonequilibrium Green's Function Modeling of Tunneling." (2015).
- Ilatikhameneh, Hesameddin, Gerhard Klimeck, Joerg Appenzeller, and Rajib Rahman. "Scaling theory of electrically doped 2D transistors." IEEE Electron Device Letters 36, no. 7 (2015): 726-728.
- Ameen, Tarek A., Hesameddin Ilatikhameneh, Gerhard Klimeck, and Rajib Rahman. "Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors." Scientific reports (2016), doi:10.1038/srep28515
- Ilatikhameneh, Hesameddin, Yaohua Tan, Bozidar Novakovic, Gerhard Klimeck, Rajib Rahman, and Joerg Appenzeller. "Tunnel field-effect transistors in 2-D transition metal dichalcogenide materials." IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 (2015): 12-18.