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Exercise: Density of States Function Calculation
Teaching Materials | 06 Jul 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
These exercises teach the students how to derive the DOS function for a 2D and a 1D system and to calculate the energy-dependent effective mass for non-parabolic bands.www.eas.asu.edu/~vasileskNSF
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PN Diode Exercise: Series Resistance
Teaching Materials | 06 Jul 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
An exercise in determining the series resistance in a PN diode.
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Exercise: PIN Diode
Teaching Materials | 06 Jul 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
An exercise in the operation of a PIN diode under the conditions of forward and reverse bias.
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Schred: Exercise 1
Teaching Materials | 06 Jul 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise illustrates basic SCHRED capabilities for modeling MOS capacitors and also illustrates how the bound states distribution in energy changes with doping. The average distance of the carriers calculated semi-classically and quantum-mechanically is also examined since it is important...
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SCHRED: Exercise 2
Teaching Materials | 06 Jul 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
In this exercise students examine the doping dependence of the threshold voltage shift in MOS capacitors due to the quantum-mechanical charge description in the channel.
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Schred: Exercise 3
Teaching Materials | 06 Jul 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise examines the degradation of the total gate capacitance with technology generation due to Maxwell-Boltzmann instead of Fermi-Dirac statistics, quantum-mechanical charge description and depletion of the polysilicon gates. www.eas.asu.edu/~vasilesk NSF
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MOSFET Exercise
Teaching Materials | 07 Jul 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias conditions.www.eas.asu.edu/~vasileskNSF
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Bulk Monte Carlo Code Described
Teaching Materials | 01 Jul 2008 | Contributor(s):: Dragica Vasileska
In this tutorial we give implementation details for the bulk Monte Carlo code for calculating the electron drift velocity, velocity-field characteristics and average carrier energy in bulk GaAs materials. Identical concepts with minor details apply to the development of a bulk Monte Carlo code...
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Consistent Parameter Set for an Ensemble Monte Carlo Simulation of 4H-SiC
Papers | 01 Jul 2008 | Contributor(s):: Dragica Vasileska
A consistent parameter set is presented for Ensemble Monte Carlo simulation that simultaneously reproduces the experimental low-field and high-field characteristic transport parameters of 4H SiC.D. Vasileska and S. M. Goodnick, Computational Electronics, Morgan and Claypool, 2006.Freescale...
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Quantum-Mechanical Reflections in Nanodevices: an Exercise
Teaching Materials | 02 Jul 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise points out to the fact that quantum-mechanical reflections are going to be significant in nanoscale devices and proper modeling of these device structures must take into consideration the quantum-mechanical reflections. NSF, ONR Dragica Vasileska personal web-site...
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Periodic Potentials and Bandstructure: an Exercise
Teaching Materials | 02 Jul 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise teaches the students that in the case of strong coupling between the neighboring wells in square and Coulomb periodic potential wells electrons start to behave as free electrons and the gaps that open at the Brillouin zone boundaries become smaller and smaller (thus recovering the...
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From 1 well to 2 wells to 5 wells to periodic potentials: an Exercise
Teaching Materials | 02 Jul 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise demonstrates that the interaction between the wells lifts the degeneracy of the quasi-bound states and if in the limit we have infinite periodic potential it leads to formation of energy bands. Notice that when the interaction is less strong the energy levels are more sharp and...
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Exercise: CV curves for MOS capacitors
Teaching Materials | 02 Jul 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise demonstrates to the students how the low-frequency CV curves in MOS capacitors change with changing the gate workfunction, the oxide thickness and the dielectric constant. It also demonstrates the doping variation of the high-frequency CV curves.NSFNSF
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Quantum-Mechanical Reflections: an Exercise
Teaching Materials | 30 Jun 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
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Double-Barrier Case: An Exercise
Teaching Materials | 30 Jun 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
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Schred Tutorial Version 2.1
Downloads | 23 Jun 2008 | Contributor(s):: Dragica Vasileska
This Schred tutorial [or User's Manual] is intended to help users of the Schred tool with the Rappture interface. Readers will find various examples for modeling single-gate and dual-gate capacitors with either metal or polysilicon gates. The models also use either semi-classical or...
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Quantum Size Effects and the Need for Schred
Downloads | 23 Jun 2008 | Contributor(s):: Dragica Vasileska
In this paper, we provide a historical overview of the observation of quantum effects in both experimental and theoretical nanoscale devices. This overview puts into perspective the need for developing and using the Schred tool when modeling nanoscale devices. At the end of the document, we...
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Why QuaMC 2D and Particle-Based Device Simulators?
Online Presentations | 02 May 2008 | Contributor(s):: Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck
We describe the need for particle-based device simulators when modeling nanoscale devices.
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Examples for QuaMC 2D particle-based device Simulator Tool
Online Presentations | 10 May 2008 | Contributor(s):: Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck
We provide three examples that demonstrate the full capabilities of QuaMC 2D for alternative device technologies.
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Ensemble Monte Carlo Method Described
Online Presentations | 27 Apr 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck, Mark Lundstrom, David K. Ferry
In this presentation we give an overview of the implementation details of the Ensemble Monte Carlo method for mobility and drift velocity calculation in arbitrary materials and arbitrary crystalographic orientations.NSF-Career, ONR