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  1. Advanced CMOS Device Physics for 7 nm and Beyond

    16 Dec 2015 | Presentation Materials | Contributor(s): Scott Thompson

    This presentation is part of 2015 IEDM tutorials The industry march along Moore's Law continues and new semiconductor nodes at 7 and beyond will certainly happen. However, many device,...

    https://nanohub.org/resources/23282

  2. Emerging CMOS Technology at 5 nm and Beyond: Device Options and Trade-offs

    14 Dec 2015 | Presentation Materials | Contributor(s): Mark Lundstrom, Xingshu Sun, Dimitri Antoniadis, Shaloo Rakheja

    Device Options and Trade-offs

    https://nanohub.org/resources/23273

  3. Ivan C R nascimento

    https://nanohub.org/members/121504

  4. RF Solid-State Vibrating Transistors

    15 Feb 2014 | Online Presentations | Contributor(s): Dana Weinstein

    In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of...

    https://nanohub.org/resources/20335

  5. Biswajeet Guha

    https://nanohub.org/members/87832

  6. Computational and Experimental Study of Transport in Advanced Silicon Devices

    28 Jun 2013 | Papers | Contributor(s): Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...

    https://nanohub.org/resources/18769

  7. Carbon-Based Nanoswitch Logic

    28 Mar 2013 | Online Presentations | Contributor(s): Stephen A. Campbell

    This talk discusses a rather surprising possibility: the use of carbon-based materials such as carbon nanotubes and grapheneto make nanomechanical switches with at least an order of magnitude...

    https://nanohub.org/resources/17328

  8. Uniform Methodology of Benchmarking Beyond-CMOS Devices

    31 Oct 2012 | Online Presentations | Contributor(s): Dmitri Nikonov

    Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the CMOS roadmap. Structure and...

    https://nanohub.org/resources/15674

  9. Swapnil Christian

    Working as a Design Engineer with Boeing - Defense, space and security. Interested in exploring modern semiconductor devices

    https://nanohub.org/members/70861

  10. Krishnakali Chaudhuri

    https://nanohub.org/members/70104

  11. In Search of a Better MEMS-Switch: An Elementary theory of how nanostructured dielectrics may soften landing, increase travel range, and decrease energy dissipation

    06 Jun 2012 | Online Presentations | Contributor(s): Muhammad Alam

    In this talk, I will discuss an elementary theory of the role of nanostructured electrodes in addressing some of the challenges from a fundamentally different perspective. The goal is to start a...

    https://nanohub.org/resources/13899

  12. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling

    28 Mar 2012 | Courses | Contributor(s): Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has...

    https://nanohub.org/resources/13613

  13. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)

    28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

    https://nanohub.org/resources/13614

  14. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)

    28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has...

    https://nanohub.org/resources/13612

  15. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)

    28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

    This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it...

    https://nanohub.org/resources/13611

  16. Eric Sanchez

    https://nanohub.org/members/63217

  17. Abdurrahman Javid Shaikh

    I am currently working towards my PhD at Collaborative µElectronic Design Excellence Centre (CEDEC), University Sains Malaysia (USM). My areas of interests include Theoretical and Computational...

    https://nanohub.org/members/55165

  18. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)

    11 May 2011 | Online Presentations | Contributor(s): Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10...

    https://nanohub.org/resources/11249

  19. NanoV: Nanowire-based VLSI Design

    08 Sep 2010 | Downloads | Contributor(s): muzaffer simsir

    In the coming decade, CMOS technology is expected to approach its scaling limitations. Among the proposed nanotechnologies, nanowires have the edge in the size of circuits and logic arrays that...

    https://nanohub.org/resources/9629

  20. Akash Paharia

    Currently, I am an undergraduate student in Electrical Department of Indian Institute of Technology ,Delhi. I am interested in knowing about new technologies in the field of semiconductors device...

    https://nanohub.org/members/38550

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