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Compact models are mathematical descriptions of semiconductor devices used in analog circuit simulation engines such as SPICE. A compact model provides a computationally efficient description of the terminal properties of a device as a function of terminal voltages:[{I}, {Q}] = f(Vg, Vd, Vs, Vb).

Compact Models on nanoHUB

Compact Models (21-40 of 48)

  1. CNRS - Carbon Nanotube Interconnect RC Model

    06 Oct 2017 | Compact Models | Contributor(s):

    By Jie LIANG1, Aida Todri2

    1. CNRS (Centre National de la Recherche Scientifique) 2. CNRS

    This CNT Interconnect Compact Model includes a solid physics understanding and electrical modeling for pristine and doped SWCNT as Interconnect applications. SWCNT resistance and capacitance are...

    https://nanohub.org/publications/200/?v=1

  2. Notre Dame TFET Model

    25 Aug 2017 | Compact Models | Contributor(s):

    By Hao Lu1, Trond Ytterdal2, Alan Seabaugh1

    1. University of Notre Dame 2. Norwegian University of Science and Technology

    Notre Dame TFET compact model version 2.1.0.

    https://nanohub.org/publications/195/?v=1

  3. Purdue Solar Cell Model (PSM) - Perovskite/a-Si (p-i-n)

    04 May 2017 | Compact Models | Contributor(s):

    By Xingshu Sun1, Raghu Vamsi Krishna Chavali1, Sourabh Dongaonkar1, Suhas Venkat Baddela1, Mark Lundstrom1, Muhammad A. Alam1

    Purdue University

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This...

    https://nanohub.org/publications/186/?v=1

  4. Purdue Solar Cell Model (PSM) - HIT

    04 May 2017 | Compact Models | Contributor(s):

    By Xingshu Sun1, Raghu Vamsi Krishna Chavali1, Sourabh Dongaonkar1, Suhas Venkat Baddela1, Mark Lundstrom1, Muhammad A. Alam1

    Purdue University

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This...

    https://nanohub.org/publications/185/?v=1

  5. Purdue Solar Cell Model (PSM) - Si

    04 May 2017 | Compact Models | Contributor(s):

    By Mark Lundstrom1, Muhammad A. Alam1, Raghu Vamsi Krishna Chavali1, Sourabh Dongaonkar1, Suhas Venkat Baddela1, Xingshu Sun1

    Purdue University

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This...

    https://nanohub.org/publications/184/?v=1

  6. Purdue Solar Cell Model (PSM) - CIGS/CdTe

    04 May 2017 | Compact Models | Contributor(s):

    By Xingshu Sun1, Sourabh Dongaonkar1, Raghu Vamsi Krishna Chavali1, Suhas Venkat Baddela1, Mark Lundstrom1, Muhammad A. Alam1

    Purdue University

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This...

    https://nanohub.org/publications/183/?v=1

  7. MIT TFET compact model including the impacts of non-idealities

    03 May 2017 | Compact Models | Contributor(s):

    By Redwan Noor Sajjad1, Ujwal Radhakrishna2, Dimitri Antoniadis1

    1. Massachusetts Institute of Technology 2. Massachusetts Institute of Technology (MIT)

    We present a compact model for tunnel FET that for the first time fits experimental transfer and output characteristics including the impact of non-idealities such as trap assisted tunneling and...

    https://nanohub.org/publications/181/?v=1

  8. Optical Ring Modulator ModSpec Compact Model

    19 Sep 2016 | Compact Models | Contributor(s):

    By Lily Weng1, Tianshi Wang2

    1. Massachusetts Institute of Technology (MIT) 2. University of California, Berkeley

    The optical ring modulator presented here is a vertical junction resonant microring/disk modulator which can achieve high modulation speed, lower power consumption and compact size. A Matlab-based...

    https://nanohub.org/publications/157/?v=1

  9. Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

    06 Apr 2016 | Compact Models | Contributor(s):

    By Jorge-Daniel Aguirre Morales1, Sébastien Frégonèse2, Chhandak Mukherjee3, Cristell Maneux3, Thomas Zimmer3

    1. CNRS, University of Bordeaux, IMS Laboratory 2. CNRS, IMS Laboratory 3. University of Bordeaux, IMS Laboratory

    A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.

    https://nanohub.org/publications/133/?v=1

  10. Stanford 2D Semiconductor (S2DS) Transistor Model

    04 Apr 2016 | Compact Models | Contributor(s):

    By Saurabh Vinayak Suryavanshi1, Eric Pop1

    Stanford University

    The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

    https://nanohub.org/publications/18/?v=2

  11. MVS Nanotransistor Model (Silicon)

    02 Dec 2015 | Compact Models | Contributor(s):

    By Shaloo Rakheja1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

    https://nanohub.org/publications/15/?v=4

  12. MVS III-V HEMT model

    01 Dec 2015 | Compact Models | Contributor(s):

    By Shaloo Rakheja1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical...

    https://nanohub.org/publications/71/?v=1

  13. A Verilog-A Compact Model for Negative Capacitance FET

    28 Nov 2015 | Compact Models | Contributor(s):

    By Muhammad Abdul Wahab1, Muhammad A. Alam1

    Purdue University

    The NC-FET compact model is a semi-physical verilog-A model of the negative capacitance transistor. We developed this self-consistent model with BSIM4/MVS and Landau theory. This model is useful to...

    https://nanohub.org/publications/95/?v=1

  14. CCAM Compact Carbon Nanotube Field-Effect Transistor Model

    06 Oct 2015 | Compact Models | Contributor(s):

    By Michael Schroter1, Max Haferlach2, Martin Claus2

    1. UCSD 2. Technische Universität Dresden

    CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.

    https://nanohub.org/publications/62/?v=2

  15. Thermoelectric Device Compact Model

    01 Sep 2015 | Compact Models | Contributor(s):

    By Xufeng Wang1, Kyle Conrad2, Jesse Maassen3, Mark Lundstrom1

    1. Purdue University 2. Texas Instruments 3. Dalhousie University

    The NEEDS thermoelectric compact model describes a homogeneous segment of thermoelectric material and serves as a basic building block for complex electrothermal system.

    https://nanohub.org/publications/80/?v=1

  16. MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model

    29 Aug 2015 | Compact Models | Contributor(s):

    By Ujwal Radhakrishna1, Dimitri Antoniadis2

    1. Massachusetts Institute of Technology (MIT) 2. Massachusetts Institute of Technology

    MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) model is a charge based physical model for HV-GaN HEMTs suitable for power switching applications.

    https://nanohub.org/publications/73/?v=1

  17. Verilog-A implementation of the compact model for organic thin-film transistors oTFT

    14 Jun 2015 | Compact Models | Contributor(s):

    By Ognian Marinov

    McMaster University, Hamilton, ON, Canada

    Compact model oTFT supports mobility bias enhancement, contact effects, channel modulation and leakage in organic thin-film transistors. Version 2.04.01 “mirrors” TFT in all regimes of operation by...

    https://nanohub.org/publications/63/?v=1

  18. UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model

    25 Mar 2015 | Compact Models | Contributor(s):

    By Wei Cao1, Kaustav Banerjee2

    1. University of California Santa Barbara 2. University of California, Santa Barbara

    a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions

    https://nanohub.org/publications/51/?v=1

  19. mCell Model

    19 Jan 2015 | Compact Models | Contributor(s):

    By David M. Bromberg1, Daniel H. Morris1

    Carnegie Mellon University

    This model is a hybrid physics/empirical compact model that describes digital switching behavior of an mCell logic devices, where a write current moves a domain wall to switch the resistance of a...

    https://nanohub.org/publications/13/?v=2

  20. R3

    21 Nov 2014 | Compact Models | Contributor(s):

    By Colin McAndrew

    NXP Semiconductors

    Compact model for polysilicon (poly) resistors, 3-terminal JFETs, and diffused resistors.

    https://nanohub.org/publications/26/?v=1