ECE 606 L14.1: Doping - Basic Concepts of Donors and Acceptors
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
ECE 606 L14.2 Doping - Statistics of Donor and Acceptor Levels
ECE 606 L14.4: Multiple Doping, Co-Doping, And Heavy-Doping
ECE 606 L25.1: Bipolar Junction Transistor - Current Gain in BJTs
ECE 606 L25.2: Bipolar Junction Transistor - Base Doping Design
20 Jul 2023 |
ECE 606 L25.3: Bipolar Junction Transistor - Collector Doping Design (Kirk Effect, Base Pushout)
ECE 606 L25.4: Bipolar Junction Transistor - Emitter Doping Design
ECE 606 L25.5: Bipolar Junction Transistor - Poly-Si Emitter
Chemical and Physical Properties of Endohedrally Doped Nanodiamonds
09 Nov 2022 | | Contributor(s):: Tomekia Simeon
The semiempirical electronic structure Parametric Method 3 (PM3) at the nanoHUB.org website is introduced to the student in this assignment. In particular, this semiempirical method is applied to study dopant semiconductor materials intercalated in two types of nanodiamond (ND) complexes:...
Introduction to Computational Chemistry Using the NUITNS Simulation Toolkit in nanoHUB
06 Oct 2022 | | Contributor(s):: Tomekia Simeon
In this seminar, Dr. Tomekia Simeon will describe how she has successfully used computational chemistry assignments in her undergraduate chemistry courses at Dillard University using nanoHUB’s free online simulation resources.
ABACUS MOSFETs (Spring 2022)
24 Jun 2022 | | Contributor(s):: Gerhard Klimeck
In the seventh session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the MOSFET Lab. Students can experiment with the classical scaling of a traditional 2D MOSFET....
ABACUS MOS Capacitors (Spring 2022)
08 Jun 2022 | | Contributor(s):: Gerhard Klimeck
In the sixth session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the MOS Capacitor Lab. Students can experiment with the fundamental component of a MOSfet that is any computer chip...
ABACUS MOSFETs (Winter 2021)
08 Feb 2022 | | Contributor(s):: Gerhard Klimeck
ABACUS MOS Capacitors (Winter 2021)
31 Jan 2022 | | Contributor(s):: Gerhard Klimeck
is the C-Si used in the simulation doped or not?
Q&A|Closed | Responses: 1
I need information about if is the crystalline silicon use din the simulation doped or not?
Doping to Create a Semiconductor: Changing conductive properties through diffusion
14 Jan 2020 | | Contributor(s):: Kaye Sheets, NNCI Nano
In the semiconductor industry scientists take advantage of diffusion to “dope” or introduce atoms into a silicon wafer to change its conductive properties. The lesson simulates the diffusion of a gas phase substance (ammonia) into a solid substrate (gelatin) and compares the...
PN Junction Lab (New Interactive Front End)
16 Aug 2019 | | Contributor(s):: Daniel Mejia, Gerhard Klimeck
Visualize and explore P-N junction concepts fully interactively: Band Edge Diagrams, Charge Densities, I-V and C-V Characteristics
MSEN 201 Lecture 16.2: Electrical Properties - Alloying and Dopants
14 Feb 2019 | | Contributor(s):: Patrick J Shamberger
Learning Module: Band Structure for Pure and Doped Silicon
10 Dec 2018 | | Contributor(s):: Peilin Liao
In this lab, students will learn to perform online density functional theory (DFT) simulations to compute band structures and density of states (DOS) for pure and doped Si using the DFT Material Properties Simulator available on nanoHUB. The students will work with crystalline pure and doped...
Multi-walled/Single-walled Carbon Nanotube (MWCNT/SWCNT) Interconnect Lumped Compact Model Considering Defects, Contact resistance and Doping impact
11 Jul 2018 | Compact Models | Contributor(s):
By Rongmei Chen1, Jie LIANG1, Jaehyun Lee2, Vihar Georgiev2, Aida Todri1
1. CNRS 2. University of Glasgow
In this project, we present SWCNT and MWCNT interconnect compact models. These models consider the impact of CNT defects, the chirality and contact resistance between CNT-electrode (Pd) on CNT...