In the seventh session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the MOSFET Lab. Students can experiment with the classical scaling of a traditional 2D MOSFET. Shortening the gate length will deteriorate the device performance and raise the leakage current. Students can also explore double gate MOSFETs which will have improved performance compared to the standard 2D MOSFET. Various effects due to oxide thickness, gate workfunction, doping and doping profiles can be examined. Also material properties such as minority carrier lifetimes can be explored. MOSFET-Lab is powered by the industrial tool PADRE which was used at Bell Labs to design transistors.

Network for Computational Nanotechnology (NCN)

Researchers should cite this work as follows:

• Gerhard Klimeck (2022), "ABACUS MOSFETs (Winter 2021)," https://nanohub.org/resources/35687.

  BibTex | EndNote

1. ABACUS
2. doping
3. minority carriers
4. MOSFET
5. mosfet lab
6. nanoelectronics
7. oxide thickness
8. Padre