Resources (1-7 of 7)

1. 09 Demonstration of Vertical GaN PN Diode with Step-etched Triple zone JTE

   Online Presentations | 14 Oct 2020 | Contributor(s):: Hyun-Soo Lee, Yuxuan Zhang, Zhaoying Chen, Mohammad Wahidur Rahman, Hongping Zhao, Siddharth Rajan

   We have demonstrated significantly improved BV of vertical GaN PN diode with STJTE without any degradation of forward characteristics. This is the first demonstration of a step-etched multiple zone edge termination for III-Nitride technology.

2. 25 Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz

   Online Presentations | 21 Sep 2020 | Contributor(s):: Woojin Choi, Venkatesh Balasubramanian, Peter M. Asbeck, Shadi Dayeh

   The concept of an intrinsically synthesizable linear device is demonstrated. It was implemented by changing only the device layout; additional performance gains can be attained by further materials engineering.

3. 12 The Influence of the Gate Trench Orientation to the crystal Plane on the Conduction Properties of Vertical GaN MISFETs for Laser Driving Applications

   Online Presentations | 18 Sep 2020 | Contributor(s):: E. Bahat Treidel, O. Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, J. Würfl

   In this work the development of vertical GaN MISFET technology is focused on pulsed laser driving applications with maximum voltages < 100 V (Fig. 1). Drivers for pulsed lasers are required to deliver very high currents up to 250 A in very short pulse lengths of 3 ns to 10 ns [4].

4. MEMS Resonators as an Enabling Technology

   Online Presentations | 07 Aug 2019 | Contributor(s):: Dana Weinstein

5. Engineering Disorder in Opto-Electronics

   Online Presentations | 05 Dec 2012 | Contributor(s):: Jacob B. Khurgin

   GaN is a wide bandgap material which can on one hand withstand high power and high temperature operating conditions, and on the other hand has high saturation velocity needed for high frequency operation. This tremendous potential has not been fully realized yet and in this talk it will be shown...

6. Transformative Power Semiconductor Technologies to Impact 21st Century Energy Economy, and Space and Defense Electronics

   Online Presentations | 22 Sep 2010 | Contributor(s):: Krishna Shenai

   This talk will focus on advanced power semiconductor materials, devices, circuits and systems that are needed in order to address this daunting challenge. Specifically we will discuss emerging silicon and wide bandgap materials and power devices, heterogeneous chip-scale power integration,...

7. Research Within Vasileska Group

   Presentation Materials | 29 Jun 2010 | Contributor(s):: Dragica Vasileska

   This presentation outlines recent progress in reseach within Vasileska group in the area of random telegraph noise and thermal modeling, and modeling of GaN HEMTs.