Tags: I-V curves/characteristics

Online Presentations (1-20 of 31)

  1. Discussion Session 1 (Lectures 1a, 1b and 2)

    08 Sep 2010 | | Contributor(s):: Supriyo Datta

  2. Discussion Session 2 (Lectures 3 and 4)

    08 Sep 2010 | | Contributor(s):: Supriyo Datta

  3. ECE 606 L20.1: PN Diode - Band Diagram with Applied Bias

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  4. ECE 606 L20.2: PN Diode - Derivation of the Forward Bias Formula

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  5. ECE 606 L20.3: PN Diode - Forward Bias - Non-Linear Regime

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  6. ECE 606 L20.4: PN Diode - Non-Ideal Effects

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  7. ECE 606 L23.1: Schottky Diode - Basics

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  8. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  9. ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  10. ECE 606 Lecture 24: MOSFET Non-Idealities

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  11. ECE 606 Lecture 35: MOSFET I-V Characteristics I

    16 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  12. ECE 606 Lecture 36: MOSFET I-V Characteristics II

    28 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  13. IWCN 2021: Computational Research of CMOS Channel Material Benchmarking for Future Technology Nodes: Missions, Learnings, and Remaining Challenges

    15 Jul 2021 | | Contributor(s):: raseong kim, Uygar Avci, Ian Alexander Young

    In this preentation, we review our journey of doing CMOS channel material benchmarking for future technology nodes. Through the comprehensive computational research for past several years, we have successfully projected the performance of various novel material CMOS based on rigorous physics...

  14. IWCN 2021: How to Preserve the Kramers-Kronig Relation in Inelastic Atomistic Quantum Transport Calculations

    15 Jul 2021 | | Contributor(s):: Daniel Alberto Lemus, James Charles, Tillmann Christoph Kubis

    The nonequilibrium Green’s function method (NEGF) is often used to predict quantum transport in atomically resolved nanodevices. This yields a high numerical load when inelastic scattering is included. Atomistic NEGF had been regularly applied on nanodevices, such as nanotransistors....

  15. Keithley 4200-SCS Lecture 01: Introduction - System Overview - DC I-V Source Measurement

    20 Jan 2011 | | Contributor(s):: Lee Stauffer

    Introduction to Device Characterization -System Overview: System Architecture, Hardware Features and Software Features -Precision DC I-V Source-Measure Features and Concepts.

  16. Keithley 4200-SCS Lecture 02: Basics of Keithley Interactive Test Environment (KITE)

    20 Jan 2011 | | Contributor(s):: Lee Stauffer

  17. Keithley 4200-SCS Lecture 03: More KITE Setup and Features

    20 Jan 2011 | | Contributor(s):: Lee Stauffer

  18. Keithley 4200-SCS Lecture 04: Speed and Timing Considerations

    20 Jan 2011 | | Contributor(s):: Lee Stauffer

  19. Keithley 4200-SCS Lecture 05: Low Current and High Resistance Measurements

    20 Jan 2011 | | Contributor(s):: Lee Stauffer

  20. Keithley 4200-SCS Lecture 06: Troubleshooting

    20 Jan 2011 | | Contributor(s):: Lee Stauffer