-
Discussion Session 1 (Lectures 1a, 1b and 2)
08 Sep 2010 | | Contributor(s):: Supriyo Datta
-
Discussion Session 2 (Lectures 3 and 4)
08 Sep 2010 | | Contributor(s):: Supriyo Datta
-
ECE 606 L20.1: PN Diode - Band Diagram with Applied Bias
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
-
ECE 606 L20.2: PN Diode - Derivation of the Forward Bias Formula
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
-
ECE 606 L20.3: PN Diode - Forward Bias - Non-Linear Regime
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
-
ECE 606 L20.4: PN Diode - Non-Ideal Effects
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
-
ECE 606 L23.1: Schottky Diode - Basics
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
-
ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics
26 Nov 2012 | | Contributor(s):: Gerhard Klimeck
-
ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities
26 Nov 2012 | | Contributor(s):: Gerhard Klimeck
-
ECE 606 Lecture 24: MOSFET Non-Idealities
26 Nov 2012 | | Contributor(s):: Gerhard Klimeck
-
ECE 606 Lecture 35: MOSFET I-V Characteristics I
16 Apr 2009 | | Contributor(s):: Muhammad A. Alam
-
ECE 606 Lecture 36: MOSFET I-V Characteristics II
28 Apr 2009 | | Contributor(s):: Muhammad A. Alam
-
IWCN 2021: Computational Research of CMOS Channel Material Benchmarking for Future Technology Nodes: Missions, Learnings, and Remaining Challenges
15 Jul 2021 | | Contributor(s):: raseong kim, Uygar Avci, Ian Alexander Young
In this preentation, we review our journey of doing CMOS channel material benchmarking for future technology nodes. Through the comprehensive computational research for past several years, we have successfully projected the performance of various novel material CMOS based on rigorous physics...
-
IWCN 2021: How to Preserve the Kramers-Kronig Relation in Inelastic Atomistic Quantum Transport Calculations
15 Jul 2021 | | Contributor(s):: Daniel Alberto Lemus, James Charles, Tillmann Christoph Kubis
The nonequilibrium Green’s function method (NEGF) is often used to predict quantum transport in atomically resolved nanodevices. This yields a high numerical load when inelastic scattering is included. Atomistic NEGF had been regularly applied on nanodevices, such as nanotransistors....
-
Keithley 4200-SCS Lecture 01: Introduction - System Overview - DC I-V Source Measurement
20 Jan 2011 | | Contributor(s):: Lee Stauffer
Introduction to Device Characterization -System Overview: System Architecture, Hardware Features and Software Features -Precision DC I-V Source-Measure Features and Concepts.
-
Keithley 4200-SCS Lecture 02: Basics of Keithley Interactive Test Environment (KITE)
20 Jan 2011 | | Contributor(s):: Lee Stauffer
-
Keithley 4200-SCS Lecture 03: More KITE Setup and Features
20 Jan 2011 | | Contributor(s):: Lee Stauffer
-
Keithley 4200-SCS Lecture 04: Speed and Timing Considerations
20 Jan 2011 | | Contributor(s):: Lee Stauffer
-
Keithley 4200-SCS Lecture 05: Low Current and High Resistance Measurements
20 Jan 2011 | | Contributor(s):: Lee Stauffer
-
Keithley 4200-SCS Lecture 06: Troubleshooting
20 Jan 2011 | | Contributor(s):: Lee Stauffer