Resources (1-20 of 38)

1. Chapter 1: A Primer on the MOSFet Simulator on nanoHUB.org

   Papers | 19 Mar 2020 | Contributor(s):: Abdussamad Ahmed Muntahi, Dragica Vasileska, Shaikh S. Ahmed

   The MOSFet simulator on nanoHUB.org (http://nanohub.org/resources/mosfet) simulates the equilibrium electrostatics and non-equilibrium current-voltage (I-V) characteristics of i) bulk, ii) dual-gate, and iii) SOI based field effect transistors. In this chapter, we will describe: i) the structure...

2. Device Characterization with the Keithley 4200-SCS

   Courses | 20 Jan 2011 | Contributor(s):: Lee Stauffer

   This training session is based on the Keithley 4200-SCS Semiconductor Characterization System. It is intended for beginning to intermediate users. It covers basic concepts, both of the instrument, as well as general measurement considerations.

3. Discussion Session 1 (Lectures 1a, 1b and 2)

   Online Presentations | 08 Sep 2010 | Contributor(s):: Supriyo Datta

4. Discussion Session 2 (Lectures 3 and 4)

   Online Presentations | 08 Sep 2010 | Contributor(s):: Supriyo Datta

5. ECE 606 L20.1: PN Diode - Band Diagram with Applied Bias

   Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck

6. ECE 606 L20.2: PN Diode - Derivation of the Forward Bias Formula

   Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck

7. ECE 606 L20.3: PN Diode - Forward Bias - Non-Linear Regime

   Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck

8. ECE 606 L20.4: PN Diode - Non-Ideal Effects

   Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck

9. ECE 606 L23.1: Schottky Diode - Basics

   Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck

10. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

    Online Presentations | 26 Nov 2012 | Contributor(s):: Gerhard Klimeck

11. ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities

    Online Presentations | 26 Nov 2012 | Contributor(s):: Gerhard Klimeck

12. ECE 606 Lecture 24: MOSFET Non-Idealities

    Online Presentations | 26 Nov 2012 | Contributor(s):: Gerhard Klimeck

13. ECE 606 Lecture 35: MOSFET I-V Characteristics I

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    Online Presentations | 16 Apr 2009 | Contributor(s):: Muhammad A. Alam

14. ECE 606 Lecture 36: MOSFET I-V Characteristics II

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    Online Presentations | 28 Apr 2009 | Contributor(s):: Muhammad A. Alam

15. FETToy

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    Tools | 14 Feb 2006 | Contributor(s):: Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom

    Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

16. Illinois ECE 440: MOS Field-Effect Transistor Homework

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    Teaching Materials | 27 Jan 2010 | Contributor(s):: Mohamed Mohamed

    This homework covers Output Characteristics and Mobility Model of MOSFETs.

17. Illinois ECE 440: znipolar Junction Transistor (BJT) Homework

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    Teaching Materials | 27 Jan 2010 | Contributor(s):: Mohamed Mohamed

    This homework covers BJT Fundamentals, Minority Carrier Distribution, and Terminal Currents.

18. IWCN 2021: Computational Research of CMOS Channel Material Benchmarking for Future Technology Nodes: Missions, Learnings, and Remaining Challenges

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    Online Presentations | 13 Jul 2021 | Contributor(s):: raseong kim, Uygar Avci, Ian Alexander Young

    In this preentation, we review our journey of doing CMOS channel material benchmarking for future technology nodes. Through the comprehensive computational research for past several years, we have successfully projected the performance of various novel material CMOS based on rigorous physics...

19. IWCN 2021: How to Preserve the Kramers-Kronig Relation in Inelastic Atomistic Quantum Transport Calculations

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    Online Presentations | 15 Jul 2021 | Contributor(s):: Daniel Alberto Lemus, James Charles, Tillmann Christoph Kubis

    The nonequilibrium Green’s function method (NEGF) is often used to predict quantum transport in atomically resolved nanodevices. This yields a high numerical load when inelastic scattering is included. Atomistic NEGF had been regularly applied on nanodevices, such as nanotransistors....

20. Keithley 4200-SCS Lecture 01: Introduction - System Overview - DC I-V Source Measurement

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    Online Presentations | 12 Jan 2011 | Contributor(s):: Lee Stauffer

    Introduction to Device Characterization -System Overview: System Architecture, Hardware Features and Software Features -Precision DC I-V Source-Measure Features and Concepts.