Support

Support Options

Submit a Support Ticket

 

Tags: MOSFET modeling

All Categories (1-20 of 22)

  1. how to simulate insulator in a GNRFET with matlab?

    Closed | Responses: 0

    I want to apply gate voltage on a graphene nanoribbon as a channel in a GNRFET. then I want to solve poisson equation but I need to know the voltage on channel as the boundary...

    https://nanohub.org/answers/question/1583

  2. Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model

    08 Apr 2015 | Compact Models

    The VSCNFET model captures the dimensional scaling properties and includes parasitic resistance, capacitance, and tunneling leakage currents. The model aims for CNFET technology assessment for the...

    https://nanohub.org/publications/42/?v=2

  3. Neel Chatterjee

    https://nanohub.org/members/118363

  4. Hybrid CMOS/SET models for PSpice?

    Closed | Responses: 0

    Hello! Can anyone tell me where can I find models for hybrid transistors (CMOS and Sinlgle Electron) for designing circuits in PSpice? I must find them for my homework. Thank you!

    https://nanohub.org/answers/question/1404

  5. How exactly PN junction works?

    Closed | Responses: 0

    I know the conventional explanation that electrons moves from n- side and holes from p-side etc but i know that holes is nothing but the absence of electron. So i want to know the working of...

    https://nanohub.org/answers/question/1341

  6. Sabbir Ebna Razzaque

    https://nanohub.org/members/67938

  7. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling

    28 Mar 2012 | Courses | Contributor(s): Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has...

    https://nanohub.org/resources/13613

  8. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)

    28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

    https://nanohub.org/resources/13614

  9. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)

    28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has...

    https://nanohub.org/resources/13612

  10. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)

    28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

    This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it...

    https://nanohub.org/resources/13611

  11. Hasan Munir Nayfeh

    Dr. Hasan M. Nayfeh is a senior engineer at IBM SRDC (East Fishkill, New York). He received his Ph.D. (2003) in Electrical Engineering in the area of strained silicon devices from MIT (Cambridge,...

    https://nanohub.org/members/56927

  12. keerti kumar korlapati

    https://nanohub.org/members/55518

  13. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)

    11 May 2011 | Online Presentations | Contributor(s): Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10...

    https://nanohub.org/resources/11249

  14. Onkar Shrinivas Bhende

    https://nanohub.org/members/52322

  15. MOSFET Lab - Scaling

    03 Jan 2011 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck, Dragica Vasileska

    The concept of device scaling and the need to control short channel effects is used in this real life problem

    https://nanohub.org/resources/10268

  16. ABACUS: MOSFET - Diffusion Process

    09 Aug 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    The goal of this assignment is to make familiar the students the required doses in the diffusion step of fabrication of semiconductor devices to get certain values of the volume doping densities.

    https://nanohub.org/resources/9484

  17. Threshold voltage in a nanowire MOSFET

    22 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, SungGeun Kim, Gerhard Klimeck

    Threshold voltage in a metal oxide semiconductor field-effect transistor (better known as a MOSFET) is usually defined as the gate voltage at which an inversion layer forms at the interface...

    https://nanohub.org/resources/8803

  18. i need detail about nanoscale double gate cmos mosfet

    Closed | Responses: 1

    to model a cmos double gate mosfet, what are the parameters need to be considered

    https://nanohub.org/answers/question/478

  19. How to modify Datta’s 1D Matrix Density Matlab code to simulate a germanium pMOS

    Closed | Responses: 0

    How would one modify Datta’s 1D Matrix Density Matlab code (shown in Quantum transport:Atom to Transistor) in order to simulate a germanium pMOS (the code shown simulates a static 1D Si...

    https://nanohub.org/answers/question/380

  20. Exercise for MOSFET Lab: DIBL Effect

    03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    In this exercise students are required to examine the drain induced barrier lowering (DIBL) effect in short channel MOSFET devices.

    https://nanohub.org/resources/7190

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.