
Nikolaos Makris
https://nanohub.org/members/160697

A VerilogA Compact Model for Negative Capacitance FET
28 Nov 2015  Compact Models  Contributor(s):
By Muhammad Abdul Wahab^{1}, Muhammad A. Alam^{1}
Purdue University
The NCFET compact model is a semiphysical verilogA model of the negative capacitance transistor. We developed this selfconsistent model with BSIM4/MVS and Landau theory. This model is useful...
https://nanohub.org/publications/95/?v=1

Gaurav Dhiman
https://nanohub.org/members/131673

how to simulate insulator in a GNRFET with matlab?
Closed  Responses: 0
I want to apply gate voltage on a graphene nanoribbon as a channel in a GNRFET. then I want to solve poisson equation but I need to know the voltage on channel as the boundary...
https://nanohub.org/answers/question/1583

Stanford VirtualSource Carbon Nanotube FieldEffect Transistors Model
08 Apr 2015  Compact Models  Contributor(s):
By ChiShuen Lee^{1}, H.S. Philip Wong^{1}
Stanford University
The VSCNFET model captures the dimensional scaling properties and includes parasitic resistance, capacitance, and tunneling leakage currents. The model aims for CNFET technology assessment for the...
https://nanohub.org/publications/42/?v=2

Neel Chatterjee
https://nanohub.org/members/118363

Hybrid CMOS/SET models for PSpice?
Closed  Responses: 0
Hello! Can anyone tell me where can I find models for hybrid transistors (CMOS and Sinlgle Electron) for designing circuits in PSpice? I must find them for my homework. Thank you!
https://nanohub.org/answers/question/1404

How exactly PN junction works?
Closed  Responses: 0
I know the conventional explanation that electrons moves from n side and holes from pside etc but i know that holes is nothing but the absence of electron. So i want to know the working of...
https://nanohub.org/answers/question/1341

Sabbir Ebna Razzaque
https://nanohub.org/members/67938

Negative Bias Temperature Instability (NBTI) in pMOSFETs: Characterization, Material/Process Dependence and Predictive Modeling
28 Mar 2012   Contributor(s):: Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

Negative Bias Temperature Instability (NBTI) in pMOSFETs: Fast and Ultrafast Characterization Methods (Part 1 of 3)
28 Mar 2012   Contributor(s):: Souvik Mahapatra

Negative Bias Temperature Instability (NBTI) in pMOSFETs: Predictive Modeling (Part 3 of 3)
28 Mar 2012   Contributor(s):: Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

Negative Bias Temperature Instability (NBTI) in pMOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)
28 Mar 2012   Contributor(s):: Souvik Mahapatra
This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner...

Bhupesh Bishnoi
https://nanohub.org/members/62512

Hasan Munir Nayfeh
Dr. Hasan M. Nayfeh is a senior engineer at IBM SRDC (East Fishkill, New York). He received his Ph.D. (2003) in Electrical Engineering in the area of strained silicon devices from MIT (Cambridge,...
https://nanohub.org/members/56927

keerti kumar korlapati
https://nanohub.org/members/55518

Negative Bias Temperature Instability (NBTI) in pMOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)
11 May 2011   Contributor(s):: Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to...

Onkar Shrinivas Bhende
https://nanohub.org/members/52322

MOSFET Lab  Scaling
03 Jan 2011   Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck, Dragica Vasileska
The concept of device scaling and the need to control short channel effects is used in this real life problem

ABACUS: MOSFET  Diffusion Process
09 Aug 2010   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
The goal of this assignment is to make familiar the students the required doses in the diffusion step of fabrication of semiconductor devices to get certain values of the volume doping densities.