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Transistor Mania: Modeling Electron Flow
17 Jun 2021 | | Contributor(s):: Meghan Saxer, NNCI Nano
This activity is designed to help the students understand the significance of transistors in their lives. Students will learn how current research on nanoscale transistors is making their favorite electronic devices (i.e., cell phones, gaming devices, computers, etc.) faster and more powerful....
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Celdas Solares con Tintes Fotosensibles (Dye-Sensetized Solar Cells)
16 Jun 2020 | | Contributor(s):: Nano-Link Center for Nanotechnology Education, Frank Fernandes, Rodfal Alberto Rodriguez (editor), María Teresa Rivera (editor)
Este módulo trabaja con la fabricación de una celda solar con tinte fotosensible (“DSC”, por sus siglas en inglés). Una “DSC” es, esencialmente, una celda foto-electroquímica; significa que una reacción química foto-inducida...
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Photolithography (Option A)
06 Feb 2020 | | Contributor(s):: James J Marti, Nano-Link Center for Nanotechnology Education
This module presents an introduction and demonstration of photolithography, the process of copying a high-resolution pattern onto multiple substrates. Students replicate key steps in the process of photolithography and learn how these processes fit into the fabrication of micro- and nanoscale...
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Nanotechnology in Electronics: An Introduction to the units on LEDs, Thermistors, and Transistors
12 Jan 2020 | | Contributor(s):: Jacyln Murray, NNCI Nano
The purpose of the following group of lab units is to illustrate properties associated with nanotechnology and the electronics industry through utilization of semiconductors. By using macro-examples of actual nano-circuitry, students will understand what is happening on the...
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Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
24 Oct 2012 | | Contributor(s):: Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without...
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MOSFET Design Calculations - Step 3
01 Apr 2012 | | Contributor(s):: Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
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MOSFET Design Calculations - Step 3 (Instructor Copy)
01 Apr 2012 | | Contributor(s):: Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
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Carbon NanoTubes: Structure - Properties - Applications
19 Mar 2012 | | Contributor(s):: Yuri A Kruglyak
Presentation slides for seminar given for students of Faculty of Computer Sciences of Odessa State Environmental University, Ukraine by Prof. Yuri Kruglyak on May 22, 2008.
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Viktor Glushkov - Pioneer of Cybernetics
19 Mar 2012 | | Contributor(s):: Yuri A Kruglyak
Presentation slides of seminar given for students of Faculty for computer sciences of Odessa State Environmental University, Ukraine by Prof. Yuri Kruglyak.
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MOSFET Design Simulation I
07 Mar 2012 | | Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
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MOSFET Design Simulation I (Instructor Copy)
07 Mar 2012 | | Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
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MOSFET Design Calculations - Step 2 (Instructor Copy)
05 Mar 2012 | | Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
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MOSFET Design Calculations - Step 2
05 Mar 2012 | | Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
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C++ Programming Examples I
02 Mar 2012 | | Contributor(s):: David A Saenz
A set of simple C++ programming examples, from a basic Hello World to an example of the use of pointers.David Saenz, O'Reili book: Practical C++ programmingPractical C++ ProgrammingNCN Project, Purdue University
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NEMO5 Manual
13 Feb 2012 | | Contributor(s):: James Fonseca, Sebastian Steiger
Updated Sep 2, 2015 revision 21229Uploaded Nov 11, 2014, revision 17811MetaPoissonQTBM5 solver options, uploaded Jan 29, 2014. (Click "additional materials")Device Specification for simplified device geometries uploaded Jan 30, 2014. (Click "additional materials")
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MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values (Instructor Copy)
05 Feb 2012 | | Contributor(s):: Stella Quinones
The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the nanoHUB.org website. By completing this exercise, the student is able to compare the mathematical model of the...
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MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values
05 Feb 2012 | | Contributor(s):: Stella Quinones
The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the nanoHUB.org website. By completing this exercise, the student is able to compare the mathematical model of the...
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MATLAB Tutorial
15 Aug 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
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Solid State Lightening and LEDs
15 Aug 2011 | | Contributor(s):: Dragica Vasileska
This lecture is part of a Computational optoelectronics class that is taught at ASU by Prof. Vasileska.
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Quantum Computing - Introduction
15 Aug 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck