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  1. ECE 695A Lecture 10: NBTI Time Dependence -- Frequency and Duty Cycle Dependencies

    Online Presentations | 06 Feb 2013 | Contributor(s):: Muhammad Alam

    Outline:NBTI stress and relaxation by R-D modelFrequency independence and lifetime projectionDuty cycle dependenceThe magic of measurementConclusions

  2. ECE 695A Lecture 9: NBTI Time Dependence -- Stress Phase

    Online Presentations | 06 Feb 2013 | Contributor(s):: Muhammad Alam

    Outline:Background: Time-dependent degradationThe Reaction-Diffusion modelApproximate solution to R-D model in stress phaseDegradation free transistorsConclusions

  3. ECE 695A Lecture 8: Phenomenological Observations for NBTI

    Online Presentations | 01 Feb 2013 | Contributor(s):: Muhammad Alam

    Outline:Qualitative observationsTime, voltage, temperature dependenciesMaterial dependenceCircuit implications

  4. ECE 695A Lecture 8R: Review Questions

    Online Presentations | 01 Feb 2013 | Contributor(s):: Muhammad Alam

    What is the distinction between BTI and NBTI phenomena?What does it mean that a process is thermally activated?What is the difference between parametric failure and catastrophic failure? Give examples. What are the time-characteristics of trapping, BTI, and NBTI?Which device will have poorer NBTI...

  5. Siting Liu

    https://nanohub.org/members/60600

  6. Esteve Amat

    https://nanohub.org/members/52897

  7. On the Resolution of Ultra-fast NBTI Measurements and Reaction-Diffusion Theory

    Online Presentations | 30 Dec 2009 | Contributor(s):: Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam

    Reaction-Diffusion (R-D) theory, well-known to successfully explain most features of NBTI stress, is perceived to fail in explaining NBTI recovery. Several efforts have been made to understand differences between NBTI relaxation measured using ultra-fast methods and that predicted by R-D theory....

  8. Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices

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    Online Presentations | 30 Jun 2008 | Contributor(s):: Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam

    Mobility degradation due to generation of interfacetraps, Δµeff(NIT), is a well-known phenomenon that has beentheoretically interpreted by several mobility models. Based onthese analysis, there is a general perception that Δµeff(NIT) isrelatively insignificant (compared to Δµeff due to...

  9. Modeling Interface-defect Generation (MIG)

    4.0 out of 5 stars 

    Tools | 18 Jul 2006 | Contributor(s):: Ahmad Ehteshamul Islam, HALDUN KUFLUOGLU, Muhammad A. Alam

    Analyzes device reliability based on NBTI

  10. Spice3f4

    5.0 out of 5 stars 

    Tools | 14 Aug 2005 | Contributor(s):: Michael McLennan

    General-purpose circuit simulation program for nonlinear dc, nonlinear transient, and linear ac analysis

  11. Negative Bias Temperature Instability (NBTI)

    Courses|' 22 Nov 2016

    In this modular course, we will cover recent advances in Negative Bias Temperature Instability (NBTI), which is a crucial reliability issue for Silicon Oxynitride and High K Metal Gate PMOS...

    https://nanohub.org/courses/NBTI